pspice二级管参数总结Word格式文档下载.docx

pspice二级管参数总结Word格式文档下载.docx

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name

parameter

units

default

example

area

1

saturationcurrent

A

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3

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emissioncoefficient

4

TT

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TNOM

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TheDCcharacteristicsofthediodearedeterminedbytheparametersIS,N,andtheohmicresistanceRS・Chargestorageeffectsaremodeledbyatransittime,TT,andanonlineardepletionlayercapacitancewhichisdeterminedbytheparametersCJO,VJ,andThetemperaturedependenceofthesaturationcurrentisdefinedbytheparametersEG,thebandgapenergyandXTI,thesaturationcurrenttemperatureexponent・ThenominaltemperatureatwhichtheseparametersweremeasuredisTNOM,whichdefaultstothecircuit-widevaluespecifiedonthe・0PTIONScontrolline・ReversebreakdownismodeledbyanexponentialincreaseinthereversediodecurrentandisdeterminedbytheparametersBVandIBV（bothofwhicharepositivenumbers）・

3.国外网站关于PSpice其它模型的参数介绍：

如（三极管，达林顿管，场效应管，二极管）

Spicemodels

•Introduction

•TheMODmodelfile

•TheZMODELS.LIBlibraryfile

•Modelparametersandlimitations

•Bipolars

•Darlingtons

•MOSFETs

•Diodes

•Furtherinformation

Introduction

ZetexhavecreatedSpicemodelsforarangeofsemiconductorcomponents・ModelsincludedareSchottkyandvaricap,high-performancebipolar（highcurrent,lowVCE（sat））,highervoltagebipolar,bipolarDarlingtonandMOSFETtransistors・Thisrangeiscontinuouslyunderreviewasnewproductsareintroducedandretrospectivemodelsaregeneratedforexistingproducts・

TheSpicemodelsareavailableintwoformats:

1.AseparateSpicemodeltextfileforeachZetexdevicetypeforwhichamodelispresentlyavailable・ThesecanbeaccessedfromtheProductQuickfinder

2.AlltheavailableZetexdevicemodelsarecollectedtogetherintoasingle・LIBtextfilecalledZMODELS・LIB・

AgenericsymbollibraryfileisavailablecalledZETEXM・SLBthatenablesWindows?

versionsofPSpicetousetheZetexspicemodels・Furtherinformationonthesymbollibrary,includinginstallationinstructionswillbefoundinthetextfilecalledZETEXM.TXT

TheMODModelFile

EachofthesefilesisaSpicemodelforasingledevice・TheycanbeloadedintoyoursimulationsimplybyemployingtheSpicecommand〈・includedevice_name・mod>

・Onlythedevicetypesspecificallyrequiredbythecircuitundersimulationneedbeincludedinthisway.Alldiodeandbipolartransistormodelsaresimple〈・model>

files・However,DarlingtontransistorsandMOSFETmodelsaremulti-componentsubcircuitsandassucharesuppliedas〈・subckt>

files・

ThediodemodelsshouldbeincludedincircuitfilesusingthenormalSpicereference<

DnumAnode_nodeCathode_nodeDevice_name>

・

Bipolartransistormodelsshouldbeincludedusing<

QnumCollector_nodeBase_nodeEmitter_nodeDevice_name>

Allothermodelsshouldbereferencedassubcircuitsi・e.intheform<

XnumCollector_nodeBase_nodeEmitter_nodeDevice_name>

forDarlingtontransistors,and<

XnumDrain_nodeGate_nodeSource_nodeDevice_name>

forMOSFETs.

TheZMODELS.LIBLibraryFile

Usersmayprefertousethemodellibrary.Thislibraryisa

collectionofallZetexSpicemodelsexactlyastheyappearintheindividualmodelfiles・Byusingthestatement〈・libzmodels・lib>

Spicewillbeabletoaccessanymodelwithinthelibrarywithouttheneedformultiple〈・include〉statements・

Note：

Allsubcircuits,whetherinthelibraryorasindividualmodelfilesusethesameconnectionsequenceasSpiceforsingleelementmodels,thuseasingtheiruse・

Modelparametersandlimitations

Bipolars

AllbipolartransistorandDarlingtonmodelsarebasedonSpice'

smodifiedGummel-Poonmode1.Atypicalmodelforasingletransistorisshownasfollows：

水ZetexFMMT493ASpiceModelvl.0LastRevised30/3/06

.MODELFMMT493ANPNIS二6E-14NF=0.99BF=1100IKF二1.1

+NK二0.7VAF二270ISE二0.3E-14NE=1.26NR=0.98BR=70IKR二0.5

+VAR二27ISC=1.2e-13NC=1.2RB=0.2RE二0・08RC二0・08RCO=8

+GAMMA二3E-9CJC=15.9E-12MJC=O.4VJC=O.51CJE二108E-12

+MJE二0.35VJE二0.7TF二0.8E-9TR=55e-9XTB二1.4QUASIMODO

Inthebipolarmodel:

•ISandNFcontrolIcboandthevalueofIcatmediumbiaslevels・

•ISEandNEcontrolthefallinhFEthatoccursatlowIc.

•BFcontrolspeakforwardhFEandXTBcontrolshowitvarieswithtemperature・

•BRcontrolspeakreversehFEi・e.collectorandemitterreversed・

•IKFandNKcontrolthecurrentandtherateatwhichhFEfallsathighcollectorcurrents・

•IKRcontrolswherereversehFEfallsathighemittercurrents・

•ISCandNCcontrolsthefallofreversehFEatlowcurrents・

•RC,RBandREaddseriesresistancetothesedeviceterminals・

•VAFcontrolsthevariationofcollectorcurrentwithvoltagewhenthetransistorisoperatedinitslinearregion.

•VARisthereverseversionofVAF.

•CJC,VJCandMJCcontrolCcbandhowitvarieswithVcb.

•CJE,VJEandMJEcontrolCbeCcbandhowitvarieswithVeb.

•TFcontrolsFtandswitchingspeeds・

•TRcontrolsswitchingstoragetimes・

•RCO,GAMMA,QUASIMODcontrolthequasi-saturationregion.

SomestandardbipolartransistorSpicemodelsmaynotincludeaparameterthatallowsBF,thehFEparameter,tovarywithtemperature・IfXTBisabsentitdefaultstozero,e.g・notemperaturedependence・IfhFEtemperatureeffectsareofinterestandXTBisnotmodeledthenthefollowingvaluesmaybeusedtoprovideanestimateorastartingpointforfurtherinvestigation:

Polarity

XTB

NPN

1.6

PNP

1.9

ItissuggestedthattheappropriatedatasheethFEprofileisexamined,andaSpicetestcircuitcreatedthatsimulatesthedeviceinquestionandgeneratesasetofhFEcurves・TwoorthreesuchiterationsshouldnormallybesufficienttodefineavalueforXTBineachcase・Pleaserememberthatthesenotesareonlyaroughguideastotheeffectofmodelparameters・Also,manyoftheparametersareinterdependentsoadjustingoneparametercanaffectmanydevicecharacteristics・

AtZetex,wehaveendeavoredtomakethemodelsperformascloselytoactualsamplesaspossiblebutsomecompromisesareforcedwhichcanresultinsimulationerrorsundersomecircumstances・Themainareasof

errorobservedsofarhavebeen:

•SpiceisoftenoveroptimisticinthehFEatransistorwillgivewhenoperatedaboveitsdatasheetcurrentratings・Thisisparticularlytrueforahighvoltagetransistoroperatedatalowcollector-emittervoltageandquasi-saturationparametersRCO,GAMMAandQUASIMODhavebeenintroducedtoimprovethemodelsinthisregion.

•Spicecanbepessimisticwhenpredictingswitchingstoragetimewhencurrentisextractedfromthebaseofatransistortospeedturn-off.

Darlingtons

Thesearesubcircuitsusingastandardtransistormode1.ADarlingtonmodelisshownasfollows：

•

xZetexFZT605SpiceModelvl.0Lastrevision27/04/05

.SUBCKTFZT605123

*CBE

QI124SUB605

Q2143SUB6053.46

.MODELSUB605NPNIS二4.8E-14BF二170etc.

・ENDSFZT605:

Note:

BecauseZetexDarlingtonsaremonolithic,thetwotransistorsusedareidenticalinallrespectsotherthansize・（ThenumberattheendoftheQ2linemultipliesthesizeoftheSUB605transistorby3.46-theratiooftheareasoftheinputandoutputtransistorsforthisdevice）・

MOSFETs

NoneofSpice'

sstandardMOSFETmodelsfitthecharacteristicsoftrenchorverticalMOSFETstoowel1・ConsequentlythemodelsofMOSFET'

ssuppliedhavebeenmadeusingsubcircuitsthatincludeadditionalcomponentstoimprovesimulationaccuracy・AtypicallesscomplexMOSFETmodelisshownasfollows：

*ZETEXZXMN3A14FSpiceModel