pspice二级管参数总结Word格式文档下载.docx

1、1.11FCfbx-A Sid biis depletion capacitance coefficient0.5IBVLkv. -levd reverse bi&k&vn knee cinteni砂IBVreverse bteskdo knee cuhmanipIE-10IKFhigh-injection knee cutient吨infiniteISsatuxation cuxrewt23HpIE-14ISRTecombuiatiosi einrem paxameteiG.OKFflicker noise coeffioienlp-ti cradmc ocefficieiitemissio

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4、1saturation currentA1. Oe-14*2ohmic resistancOhm3Nemission coefficient4TTtransit-timesec0. Ins5zero-bias junction capacitanceF2pF6VJjunction potentialV0.67Mgrading coefficient8band-gap energy1. 111. 11 Si9XTIsaturation-current temp exp3. 0 pn 2. 0Schottkyflicker noise coefficient1112coefficient for

5、forward-bias depletion capacitance formula13reverse breakdown voltage40.014current at breakdown voltage1. Oe-315TNOMparameter measurement temperaturedeg C2750The DC characteristics of the diode are determined by the parameters IS, N, and the ohmic resistance RS Charge storage effects are modeled by

6、a transit time, TT, and a nonlinear depletion layer capacitance which is determined by the parameters CJO, VJ, and The temperature dependence of the saturation current is defined by the parameters EG, the band gap energy and XTI, the saturation current temperature exponent The nominal temperature at

7、 which these parameters were measured is TNOM, which defaults to the circuit-wide value specified on the 0PTIONS control line Reverse breakdown is modeled by an exponential increase in the reverse diode current and is determined by the parameters BV and IBV （both of which are positive numbers）3.国外网站

8、关于PSpice其它模型的参数介绍：如（三极管，达林顿管，场效 应管，二极管）Spice modelsIntroductionThe MOD model file The ZMODELS. LIB library fileModel parameters and limitationsBipolarsDarlingtonsMOSFETsDiodesFurther informationIntroductionZetex have created Spice models for a range of semiconductor components Models included are Sc

9、hottky and varicap, high-performance bipolar （high current, low VCE（sat）, higher voltage bipolar, bipolar Darlington and MOSFET transistors This range is continuously under review as new products are introduced and retrospective models are generated for existing productsThe Spice models are availabl

10、e in two formats:1.A separate Spice model text file for each Zetex device type for which a model is presently available These can be accessed from the Product Quickfinder2.All the available Zetex device models are collected together into a single LIB text file called ZMODELSLIBA generic symbol libra

11、ry file is available called ZETEXMSLB that enables Windows? versions of PSpice to use the Zetex spice models Further information on the symbol library, including installation instructions will be found in the text file called ZETEXM.TXTThe MOD Model FileEach of these files is a Spice model for a sin

12、gle device They can be loaded into your simulation simply by employing the Spice command include device_namemod Only the device types specifically required by the circuit under simulation need be included in this way. All diode and bipolar transistor models are simple model files However, Darlington

13、 transistors and MOSFET models are multi-component subcircuits and as such are supplied as subckt filesThe diode models should be included in circuit files using the normal Spice reference Bipolar transistor models should be included using All other models should be referenced as subcircuits i e. in

14、 the form for Darlington transistors, and for MOSFETs.The ZMODELS. LIB Library FileUsers may prefer to use the model library. This library is acollection of all Zetex Spice models exactly as they appear in the individual model files By using the statement lib zmodels lib, Spice will be able to acces

15、s any model within the library without the need for multiple include statementsNote：All subcircuits, whether in the library or as individual model files use the same connection sequence as Spice for single element models, thus easing their useModel parameters and limitationsBipolarsAll bipolar trans

16、istor and Darlington models are based on Spices modified Gummel-Poon mode1. A typical model for a single transistor is shown as follows：水Zetex FMMT493A Spice Model vl. 0 Last Revised 30/3/06.MODEL FMMT493A NPN IS 二6E-14 NF =0. 99 BF =1100 IKF二1. 1+NK二0. 7 VAF二270 ISE二0. 3E-14 NE =1. 26 NR =0. 98 BR

17、=70 IKR二0. 5+VAR二27 ISC=1. 2e-13 NC =1. 2 RB =0. 2 RE 二0 08 RC 二0 08 RCO=8+GAMMA二3E-9 CJC=15. 9E-12 MJC=O. 4 VJC=O. 51 CJE二108E-12+MJE二0. 35 VJE二0. 7 TF 二0. 8E-9 TR =55e-9 XTB二 1. 4 QUASIMODOIn the bipolar model:IS and NF control Icbo and the value of Ic at medium bias levelsISE and NE control the f

18、all in hFE that occurs at low Ic.BF controls peak forward hFE and XTB controls how it varies with temperatureBR controls peak reverse hFE ie. collector and emitter reversedIKF and NK control the current and the rate at which hFE falls at high collector currentsIKR controls where reverse hFE falls at

19、 high emitter currentsISC and NC controls the fall of reverse hFE at low currentsRC, RB and RE add series resistance to these device terminalsVAF controls the variation of collector current with voltage when the transistor is operated in its linear region.VAR is the reverse version of VAF.CJC, VJC a

20、nd MJC control Ccb and how it varies with Vcb.CJE, VJE and MJE control Cbe Ccb and how it varies with Veb.TF controls Ft and switching speedsTR controls switching storage timesRCO, GAMMA, QUASIMOD control the quasi-saturation region.Some standard bipolar transistor Spice models may not include a par

21、ameter that allows BF, the hFE parameter, to vary with temperature If XTB is absent it defaults to zero, e. g no temperature dependence If hFE temperature effects are of interest and XTB is not modeled then the following values may be used to provide an estimate or a starting point for further inves

22、tigation:PolarityXTBNPN1.6PNP1.9It is suggested that the appropriate datasheet hFE profile is examined, and a Spice test circuit created that simulates the device in question and generates a set of hFE curves Two or three such iterations should normally be sufficient to define a value for XTB in eac

23、h case Please remember that these notes are only a rough guide as to the effect of model parameters Also, many of the parameters are interdependent so adjusting one parameter can affect many device characteristicsAt Zetex, we have endeavored to make the models perform as closely to actual samples as

24、 possible but some compromises are forced which can result in simulation errors under some circumstances The main areas oferror observed so far have been:Spice is often over optimistic in the hFE a transistor will give when operated above its data sheet current ratings This is particularly true for

25、a high voltage transistor operated at a low collector-emitter voltage and quasi-saturation parameters RCO, GAMMA and QUASIMOD have been introduced to improve the models in this region.Spice can be pessimistic when predicting switching storage time when current is extracted from the base of a transis

26、tor to speed turn- off.DarlingtonsThese are subcircuits using a standard transistor mode1. A Darlington model is shown as follows：xZetex FZT605 Spice Model vl. 0 Last revision 27/04/05.SUBCKT FZT605 1 2 3*C B EQI 1 2 4 SUB605Q2 1 4 3 SUB605 3.46.MODEL SUB605 NPN IS二4. 8E-14 BF二170 etc. ENDS FZT605 :

27、Note:Because Zetex Darlingtons are monolithic, the two transistors used are identical in all respects other than size（The number at the end of the Q2 line multiplies the size of the SUB605 transistor by 3.46 - the ratio of the areas of the input and output transistors for this device）MOSFETsNone of

28、Spices standard MOSFET models fit the characteristics of trench or vertical MOSFETs too wel1 Consequently the models of MOSFETs supplied have been made using subcircuits that include additional components to improve simulation accuracy A typical less complex MOSFET model is shown as follows：*ZETEX ZXMN3A14F Spice Model