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toshibathmfgclbail

TOSHIBAe-MMCModule

8GBTHGBMFG6C1LBAIL

INTRODUCTION

THGBMFG6C1LBAILis8GBdensityofe-MMCModuleproducthousedin153ballBGApackage.ThisunitisutilizedadvancedTOSHIBANANDflashdevice(s)andcontrollerchipassembledasMultiChipModule.THGBMFG6C1LBAILhasanindustrystandardMMCprotocolforeasyuse.

FEATURES

THGBMFG6C1LBAILInterface

THGBMFG6C1LBAILhastheJEDEC/MMCAVersion5.1interfacewith1-I/O,4-I/Oand8-I/Omode.(*)MMCAVersion5.1isunderdiscussioninJEDEC.

PinConnection

P-WFBGA153-1113-0.50(11.5mmx13mm,H0.8mmmax.package)

ABCDEFGHJKLMNP

PinNumber

Name

PinNumber

Name

PinNumber

Name

PinNumber

Name

A3

DAT0

C2

VDDi

J5

Vss

N4

VccQ

A4

DAT1

C4

VssQ

J10

Vcc

N5

VssQ

A5

DAT2

C6

VccQ

K5

RST_n

P3

VccQ

A6

Vss

E6

Vcc

K8

Vss

P4

VssQ

B2

DAT3

E7

Vss

K9

Vcc

P5

VccQ

B3

DAT4

F5

Vcc

M4

VccQ

P6

VssQ

B4

DAT5

G5

Vss

M5

CMD

B5

DAT6

H5

DS

M6

CLK

B6

DAT7

H10

Vss

N2

VssQ

NC:

NoConnect,shallbeconnectedtogroundorleftfloating.

RFU:

ReservedforFutureUse,shallbeleftfloatingforfutureuse.

VSF:

VendorSpecificFunction,shallbeleftfloating.

PartNumbers

-PartNumbers

Availablee-MMCModuleProducts

TOSHIBAPartNumber

Density

PackageSize

NANDFlashType

Weight

THGBMFG6C1LBAIL

8GB

11.5mmx13mmx0.8mm(max)

1x64Gbit15nm

0.17gtyp.

OperatingTemperatureandHumidityConditions

-25°Cto+85°C,and0%RHto95%RHnon-condensing

StorageTemperatureandHumidityConditions

-40°Cto+85°C,and0%RHto95%RHnon-condensing

Performanee

X8mode/Sequentialaccess(4MByteaccesssize)

TOSHIBAPartNumber

Density

NANDFlashType

Interleave

Operation

Frequency

/Mode

VccQ

Typ.Performance[MB/sec]

Read

Write

THGBMFG6C1LBAIL

8GB

1x64Gbit15nm

Non

Interleave

52MHz/SDR

1.8V

45

35

3.3V

45

35

52MHz/DDR

1.8V

90

35

3.3V

90

35

HS200

1.8V

180

35

HS400

1.8V

215

35

PowerSupply

Vcc=2.7Vto3.6V

VccQ=1.7Vto1.95V/2.7Vto3.6V

OperatingCurrent(RMS)

ThemeasurementformaxRMScurrentisdoneasaverageRMScurrentconsumptionoveraperiodof100ms

TOSHIBAPart

Number

Density

NANDFlashType

Interleave

Operation

Frequency/Mode

VccQ

MaxOperatingCurrent[mA]

Iccq

Icc

THGBMFG6C1LBAIL

8GB

1x64Gbit15nm

Non

Interleave

52MHz/SDR

1.8V

95

40

3.3V

110

40

52MHz/DDR

1.8V

120

40

3.3V

140

40

HS200

1.8V

175

40

HS400

1.8V

220

40

SleepModeCurrent

TOSHIBAPartNumber

Density

NANDFlashType

Interleave

Operation

Iccqs[吩]

Iccqs+Iccs[识]

Typ.*1

Max.*2

Typ.*1

Max.*2

THGBMFG6C1LBAIL

8GB

1x64Gbit15nm

Non

Interleave

100

510

120

585

*1:

Theconditionsoftypicalvaluesare25

*2:

Theconditionsofmaximumvaluesare85

CandVccQ=3.3Vor1.8V.

CandVccQ=3.6Vor1.95V.

ProductArchitecture

ThediagraminFigure1illustratesthemainfunctionalblocksoftheTHGBMFG6C1LBAIL.

Package

Vcc(3.3V)

Cvcc

VccQ(1.8V/3.3V)「

Cvccq

VDDi=

Creg

NAND

x11y

MMCI/F(1.8V/3.3V)

KuokDnrlcMM

REGULATOR

CORELOGIC

Control

ll

NAND

NANDI/O

sign

SpecificationoftheCregandrecommendedvaluesoftheCvcc,andCvccqintheFigure1areasfollows.

Parameter

Symbol

Unit

Min.

Typ.

Max.

Remark

Vddicapacitorvalue

Creg

gF

0.10

-

2.2*

ExceptHS400

gF

1.00

-

2.2*

HS400

Vcccapacitorvalue

Cvcc

gF

-

2.2+0.1

-

Vccqcapacitorvalue

Cvccq

gF

-

2.2+0.1

-

*ToshibarecommendsthatthevalueshouldbeusuallyappliedasthevalueofCreg.

 

Figure1THGBMFG6C1LBAILBlockDiagram

PRODUCTSPECIFICATIONS

PackageDimensions

P-WFBGA153-1113-0.50(11.5mmx13mm,H0.8mmmax.package)

Unit:

mm

X

cr

ro-io|s

ooooooooooooooOOOOOOOIOOOOOOOooooooooooooooOODOOOO

oooooooooooo

ooooo

O0O0O

ooo

3

5

J53l*cl-3tlHQ-D5

go

ooo

OOO'OOO

ooooooooo

ooooooooooooooOOOOOOOOOOOOOG

OOOODOO'OOOQQOO

lllulQizlpln

Q.BZAX

-「恳磴一盛

*jelollg

 

DensitySpecifications

Density

PartNumber

InterleaveOperation

UserAreaDensity[Bytes]

SEC_COUNTinExtendedCSD

8GB

THGBMFG6C1LBAIL

NonInterleave

7,818,182,656

0xE90000

1)Userareadensityshallbereducedifenhanceduserdataareaisdefined.

RegisterInformations

OCRRegister

OCRbit

VDDVoltagewindow

Value

[6:

0]

Reserved

0000000b

[7]

1.70-1.95

1b

[14:

8]

2.0-2.6

0000000b

[23:

15]

2.7-3.6

111111111b

[28:

24]

Reserved

00000b

[30:

29]

AccessMode

10b

[31]

(cardpowerupstatusbit(busy))1

1)ThisbitissettoLOWiftheDevicehasnotfinishedthepoweruproutine.

CIDRegister

CID-slice

Name

Field

Width

Value

[127:

120]

ManufacturerID

MID

8

00010001b

[119:

114]

Reserved

-

6

0b

[113:

112]

Device/BGA

CBX

2

01b

[111:

104]

OEM/ApplicationID

OID

8

0b

[103:

56]

Productname

PNM

48

0x303038473730(008G70)

[55:

48]

Productrevision

PRV

8

0x00

[47:

16]

Productserial

PSN

32

Serialnumber

[15:

8]

Manufacturingdate

MDT

8

see-JEDECSpecification

[7:

1]

CRC7checksum

CRC

7

CRC7

[0]

Notused,always1"

-

1

1b

CSDRegister

CSD-slice

Name

Field

Width

CellType

Value

[127:

126]

CSDstructure

CSD_STRUCTURE

2

R

0x3

[125:

122]

Systemspecificationversion

SPEC_VERS

4

R

0x4

[121:

120]

Reserved

-

2

R

0x0

[119:

112]

Datareadaccess-time1

TAAC

8

R

0x27

[111:

104]

Datareadaccess-time2inCLKcycles(NSAC*100)

NSAC

8

R

0x00

[103:

96]

Max.busclockfrequency

TRAN_SPEED

8

R

0x32

[95:

84]

Devicecommandclasses

CCC

12

R

0x0F5

[83:

80]

Max.readdatablocklength

READ_BL_LEN

4

R

0x9

[79:

79]

Partialblocksforreadallowed

READ_BL_PARTIAL

1

R

0x0

[78:

78]

Writeblockmisalignment

WRITE_BLK_MISALIGN

1

R

0x0

[77:

77]

Readblockmisalignment

READ_BLK_MISALIGN

1

R

0x0

[76:

76]

DSRimplemented

DSR_IMP

1

R

0x0

[75:

74]

Reserved

-

2

R

0x0

[73:

62]

Devicesize

C_SIZE

12

R

0xFFF

[61:

59]

Max.readcurrent@VDDmin.

VDD_R_CURR_MIN

3

R

0x7

[58:

56]

Max.readcurrent@VDDmax.

VDD_R_CURR_MAX

3

R

0x7

[55:

53]

Max.writecurrent@VDDmin.

VDD_W_CURR_MIN

3

R

0x7

[52:

50]

Max.writecurrent@VDDmax.

VDD_W_CURR_MAX

3

R

0x7

[49:

47]

Devicesizemultiplier

C_SIZE_MULT

3

R

0x7

[46:

42]

Erasegroupsize

ERASE_GRP_SIZE

5

R

0x1F

[41:

37]

Erasegroupsizemultiplier

ERASE_GRP_MULT

5

R

0x1F

[36:

32]

Writeprotectgroupsize

WP_GRP_SIZE

5

R

0x07

[31:

31]

Writeprotectgroupenable

WP_GRP_ENABLE

1

R

0x1

[30:

29]

ManufacturerdefaultECC

DEFAULT_ECC

2

R

0x0

[28:

26]

Writespeedfactor

R2W_FACTOR

3

R

0x1

[25:

22]

Max.writedatablocklength

WRITE_BL_LEN

4

R

0x9

[21:

21]

Partialblocksforwriteallowed

WRITE_BL_PARTIAL

1

R

0x0

[20:

17]

Reserved

-

4

R

0x0

[16:

16]

Contentprotectionapplication

CONTENT_PROT_APP

1

R

0x0

[15:

15]

Fileformatgroup

FILE_FORMAT_GRP

1

R/W

0x0

[14:

14]

Copyflag(OTP)

COPY

1

R/W

0x0

[13:

13]

Permanentwriteprotection

PERM_WRITE_PROTECT

1

R/W

0x0

[12:

12]

Temporarywriteprotection

TMP_WRITE_PROTECT

1

R/W/E

0x0

[11:

10]

Fileformat

FILE_FORMAT

2

R/W

0x0

[9:

8]

ECCcode

ECC

2

R/W/E

0x0

[7:

1]

CRC

CRC

7

R/W/E

CRC

[0]

Notused,alwaysT'

-

1

-

0x1

ExtendedCSDRegister

CSD-slice

Name

Field

Size(Bytes)

CellType

Value

[511:

506]

Reserved

-

6

-

All‘0'

[505]

ExtendedSecurityCommandsError

EXT_SECURITY_ERR

1

R

0x00

[504]

SupportedCommandSets

S_CMD_SET

1

R

0x01

[503]

HPIfeatures

HPI_FEATURES

1

R

0x01

[502]

Backgroundoperationssupport

BKOPS_SUPPORT

1

R

0x01

[501]

Max_packedreadcommands

MAX_PACKED_READS

1

R

0x3F

[500]

Max_packedwritecommands

MAX_PACKED_WRITES

1

R

0x3F

[499]

DataTagSupport

DATA_TAG_SUPPORT

1

R

0x01

[498]

TagUnitSize

TAG_UNIT_SIZE

1

R

0x03

[497]

TagResourceSize

TAG_RES_SIZE

1

R

0x00

[496]

Contextmanagementcapabilities

CONTEXT_CAPABILITIES

1

R

0x7F

[495]

LargeUnitsize

LARGE_UNIT_SIZE_M1

1

R

0x00

[494]

Extendedpartitionsattributesupport

EXT_SUPPORT

1

R

0x03

[493]

Supportedmodes

SUPPORTED_MODES

1

R

0x01

[492]

FFUfeatures

FFU_FEATURES

1

R

0x00

[491]

Operationcodestimeout

OPERATION_CODES_TIMEOUT

1

R

0x00

[490:

487]

FFUArgument

FFU_ARG

4

R

0xFFFFFFFF

[486]

Barriersupport

BARRIER_SUPPORT

1

R

0x01

[485:

309]

Reserved

-

177

-

All‘0'

[308]

CMDQueuingSupport

CMDQ_SUPPORT

1

R

0x00

[307]

CMDQueuingDepth

CMDQ_DEPTH

1

R

0x00

[306]

Reserved

-

1

-

0x00

[305:

302]

NumberofFWsectorscorrectlyprogrammed

NUMBER_OF_FW_SECTORS_C

ORRECTLYPROGRAMMED

4

R

All'0'

[301:

270]

Vendorproprietaryhealthreport

VENDOR_PROPRIETARY

HEALTHREPORT

32

R

All‘0'

[269]

DevicelifetimeestimationtypeB

DEVICE_LIFE_TIME_EST_TYP_B

1

R

0x00

[268]

DevicelifetimeestimationtypeA

DEVICE_LIFE_TIME_EST_TYP_A

1

R

0x01

[267]

PreEOLinformation

PRE_EOL_INFO

1

R

0x01

[266]

Optimalreadsize

OPTIMAL_READ_SIZE

1

R

0x08

[265]

Optimalwritesize

OPTIMALWRITESIZE

1

R

0x08

[264]

Optimaltrimunitsize

OPTIMALTRIMUNITSIZE

1

R

0x01

[263:

262]

Deviceversion

DEVICEVERSION

2

R

0x00

[261:

254]

Firmwareversion

FIRMWAREVERSION

8

R

0x02

[253]

Powerclassfor200MHz,DDRatVCC=3.6V

PWRCLDDR200360

1

R

0xCC

[252:

249]

Cachesize

CACHESIZE

4

R

0x00001000

[248]

GenericCMD6timeout

GENERICCMD6TIME

1

R

0x0A

[247]

Poweroffnotification(long)timeout

POWEROFFLONGTIME

1

R

0x32

[246]

Backgroundoperationsstatus

BKOPSSTATUS

1

R

0x00

[245:

242]

Numberofcorrectlyprogrammedsectors

CORRECTLY

PRGSECTORSNUM

4

R

0x00000000

[241]

1stinitializationtimeafterpartitioning

INITIMEOU

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