toshibathmfgclbail.docx

1、toshibathmfgclbailTOSHIBA e-MMC Module8GB THGBMFG6C1LBAILINTRODUCTIONTHGBMFG6C1LBAIL is 8GB density of e-MMC Module product housed in 153 ball BGA package. This unit is utilized advanced TOSHIBA NAND flash device(s) and controller chip assembled as Multi Chip Module. THGBMFG6C1LBAIL has an industry

2、standard MMC protocol for easy use.FEATURESTHGBMFG6C1LBAIL In terfaceTHGBMFG6C1LBAIL has the JEDEC/MMCA Version 5.1 interface with 1-I/O, 4-I/O and 8-I/O mode. (*) MMCA Version 5.1 is under discussion in JEDEC.Pin ConnectionP-WFBGA153-1113-0.50 (11.5mm x 13mm, H0.8mm max. package)ABCDEFGHJKLMNPPin N

3、umberNamePin NumberNamePin NumberNamePin NumberNameA3DAT0C2VDDiJ5VssN4VccQA4DAT1C4VssQJ10VccN5VssQA5DAT2C6VccQK5RST_nP3VccQA6VssE6VccK8VssP4VssQB2DAT3E7VssK9VccP5VccQB3DAT4F5VccM4VccQP6VssQB4DAT5G5VssM5CMDB5DAT6H5DSM6CLKB6DAT7H10VssN2VssQNC: No Connect, shall be connected to ground or left floating.

4、RFU: Reserved for Future Use, shall be left floating for future use.VSF: Vendor Specific Function, shall be left floating.Part Numbers-Part NumbersAvailable e-MMC Module ProductsTOSHIBA Part NumberDensityPackage SizeNAND Flash TypeWeightTHGBMFG6C1LBAIL8GB11.5mm x 13mm x 0.8mm(max)1 x 64Gbit 15nm0.17

5、g typ.Operati ng Temperature and Humidity Con diti ons-25 C to +85 C, and 0%RH to 95%RH non-condensingStorage Temperature and Humidity Con diti ons-40 C to +85 C, and 0%RH to 95%RH non-condensingPerforma neeX8 mode/ Sequential access (4MByte access size)TOSHIBA Part NumberDensityNAND Flash TypeInter

6、leaveOperationFrequency/ModeVccQTyp. Performance MB/secReadWriteTHGBMFG6C1LBAIL8GB1 x 64Gbit 15nmNonInterleave52MHz/SDR1.8V45353.3V453552MHz/DDR1.8V90353.3V9035HS2001.8V18035HS4001.8V21535Power SupplyVcc = 2.7V to 3.6VVccQ = 1.7V to 1.95V / 2.7V to 3.6VOperat ing Curre nt (RMS)The measurement for ma

7、x RMS current is done as average RMS current consumption over a period of 100msTOSHIBA PartNumberDensityNAND Flash TypeInterleaveOperationFrequency /ModeVccQMax Operating Current mAIccqIccTHGBMFG6C1LBAIL8GB1 x 64Gbit 15nmNonInterleave52MHz/SDR1.8V95403.3V1104052MHz/DDR1.8V120403.3V14040HS2001.8V1754

8、0HS4001.8V22040Sleep Mode Curre ntTOSHIBA Part NumberDensityNAND Flash TypeInterleaveOperationIccqs 吩Iccqs+Iccs 识Typ. *1Max. *2Typ. *1Max. *2THGBMFG6C1LBAIL8GB1 x 64Gbit 15nmNonInterleave100510120585*1 : The conditions of typical values are 25*2 : The conditions of maximum values are 85C and VccQ =

9、3.3V or 1.8V.C and VccQ = 3.6V or 1.95V.Product ArchitectureThe diagram in Figure 1 illustrates the main functional blocks of the THGBMFG6C1LBAIL.PackageVcc(3.3V)CvccVccQ(1.8V/3.3V) CvccqVDDi =CregNANDx11yMMC I/F(1.8V/3.3V)KuokD nrlcMMREGULATORCORE LOGICCon trolllNANDNAND I/OsignSpecification of the

10、 C reg and recommended values of the C vcc, and C vccq in the Figure 1 are as follows.ParameterSymbolUnitMin.Typ.Max.RemarkVddi capacitor valueCreggF0.10-2.2*Except HS400gF1.00-2.2*HS400Vcc capacitor valueCvccgF-2.2 + 0.1-Vccq capacitor valueCvccqgF-2.2 + 0.1-* Toshiba recommends that the value shou

11、ld be usually applied as the value of C reg.Figure 1 THGBMFG6C1LBAIL Block DiagramPRODUCT SPECIFICATIONSPackage Dime nsionsP-WFBGA153-1113-0.50 (11.5mm x 13mm, H0.8mm max. package)Unit: mm匡Xcrr o-io|soooooooooooooo OOOOOOOIOOOOOOO oooooooooooooo OO DO OOOooo ooo ooo ooooooooO0O0Oooo35J53l*cl-3tlHQ-D

12、5gooooOOOOOOooo ooo ooooooooooooooooo OOOOOOOOOOOOOGOO OO DO OO OOQQOOlllulQizlplnQ.BZAX-恳磴一盛* jelollgDen sity Specificati onsDen sityPart NumberIn terleave Operati onUser Area Den sity BytesSEC_COUNT in Exte nded CSD8GBTHGBMFG6C1LBAILNon Interleave7,818,182,6560xE900001) User area density shall be

13、reduced if enhanced user data area is defined.Register I nformati onsOCR RegisterOCR bitVDD Voltage windowValue6:0Reserved000 0000b71.70-1.951b14:82.0-2.6000 0000b23:152.7-3.61 1111 1111b28:24Reserved00000b30:29Access Mode10b31(card power up status bit (busy) ) 11) This bit is set to LOW if the Devi

14、ce has not finished the power up routine.CID RegisterCID-sliceNameFieldWidthValue127:120Manufacturer IDMID80001 0001b119:114Reserved-60b113:112Device/BGACBX201b111:104OEM/Application IDOID80b103:56Product namePNM480x30 30 38 47 37 30 (008G70)55:48Product revisionPRV80x0047:16Product serialPSN32Seria

15、l number15:8Manufacturing dateMDT8see-JEDEC Specification7:1CRC7 checksumCRC7CRC70Not used, always 1-11bCSD RegisterCSD-sliceNameFieldWidthCell TypeValue127:126CSD structureCSD_STRUCTURE2R0x3125:122System specification versionSPEC_VERS4R0x4121:120Reserved-2R0x0119:112Data read access-time 1TAAC8R0x2

16、7111:104Data read access-time 2 in CLK cycles (NSAC * 100)NSAC8R0x00103:96Max. bus clock frequencyTRAN_SPEED8R0x3295:84Device command classesCCC12R0x0F583:80Max. read data block lengthREAD_BL_LEN4R0x979:79Partial blocks for read allowedREAD_BL_PARTIAL1R0x078:78Write block misalignmentWRITE_BLK_MISAL

17、IGN1R0x077:77Read block misalignmentREAD_BLK_MISALIGN1R0x076:76DSR implementedDSR_IMP1R0x075:74Reserved-2R0x073:62Device sizeC_SIZE12R0xFFF61:59Max. read current VDD min.VDD_R_CURR_MIN3R0x758:56Max. read current VDD max.VDD_R_CURR_MAX3R0x755:53Max. write current VDD min.VDD_W_CURR_MIN3R0x752:50Max.

18、write current VDD max.VDD_W_CURR_MAX3R0x749:47Device size multiplierC_SIZE_MULT3R0x746:42Erase group sizeERASE_GRP_SIZE5R0x1F41:37Erase group size multiplierERASE_GRP_MULT5R0x1F36:32Write protect group sizeWP_GRP_SIZE5R0x0731:31Write protect group enableWP_GRP_ENABLE1R0x130:29Manufacturer default EC

19、CDEFAULT_ECC2R0x028:26Write speed factorR2W_FACTOR3R0x125:22Max. write data block lengthWRITE_BL_LEN4R0x921:21Partial blocks for write allowedWRITE_BL_PARTIAL1R0x020:17Reserved-4R0x016:16Content protection applicationCONTENT_PROT_APP1R0x015:15File format groupFILE_FORMAT_GRP1R/W0x014:14Copy flag (OT

20、P)COPY1R/W0x013:13Permanent write protectionPERM_WRITE_PROTECT1R/W0x012:12Temporary write protectionTMP_WRITE_PROTECT1R/W/E0x011:10File formatFILE_FORMAT2R/W0x09:8ECC codeECC2R/W/E0x07:1CRCCRC7R/W/ECRC0Not used, always T-1-0x1Exte nded CSD RegisterCSD-sliceNameFieldSize (Bytes)Cell TypeValue511:506R

21、eserved-6-All 0505Extended Security Commands ErrorEXT_SECURITY_ERR1R0x00504Supported Command SetsS_CMD_SET1R0x01503HPI featuresHPI_FEATURES1R0x01502Background operations supportBKOPS_SUPPORT1R0x01501Max_packed read commandsMAX_PACKED_READS1R0x3F500Max_packed write commandsMAX_PACKED_WRITES1R0x3F499D

22、ata Tag SupportDATA_TAG_SUPPORT1R0x01498Tag Unit SizeTAG_UNIT_SIZE1R0x03497Tag Resource SizeTAG_RES_SIZE1R0x00496Context management capabilitiesCONTEXT_CAPABILITIES1R0x7F495Large Unit sizeLARGE_UNIT_SIZE_M11R0x00494Extended partitions attribute supportEXT_SUPPORT1R0x03493Supported modesSUPPORTED_MOD

23、ES1R0x01492FFU featuresFFU_FEATURES1R0x00491Operation codes timeoutOPERATION_CODES_TIMEOUT1R0x00490:487FFU ArgumentFFU_ARG4R0xFFFFFFFF486Barrier supportBARRIER_SUPPORT1R0x01485:309Reserved-177-All 0308CMD Queuing SupportCMDQ_SUPPORT1R0x00307CMD Queuing DepthCMDQ_DEPTH1R0x00306Reserved-1-0x00305:302N

24、umber of FW sectors correctly programmedNUMBER_OF_FW_SECTORS_CORRECTLY PROGRAMMED4RAll 0301:270Vendor proprietary health reportVENDOR_PROPRIETARYHEALTH REPORT32RAll 0269Device life time estimation type BDEVICE_LIFE_TIME_EST_TYP_B1R0x00268Device life time estimation type ADEVICE_LIFE_TIME_EST_TYP_A1R

25、0x01267Pre EOL informationPRE_EOL_INFO1R0x01266Optimal read sizeOPTIMAL_READ_SIZE1R0x08265Optimal write sizeOPTIMAL WRITE SIZE1R0x08264Optimal trim unit sizeOPTIMAL TRIM UNIT SIZE1R0x01263:262Device versionDEVICE VERSION2R0x00261:254Firmware versionFIRMWARE VERSION8R0x02253Power class for 200M Hz, D

26、DR at VCC=3.6VPWR CL DDR 200 3601R0xCC252:249Cache sizeCACHE SIZE4R0x00001000248Generic CMD6 timeoutGENERIC CMD6 TIME1R0x0A247Power off notification(long) timeoutPOWER OFF LONG TIME1R0x32246Background operations statusBKOPS STATUS1R0x00245:242Number of correctly programmed sectorsCORRECTLYPRG SECTORS NUM4R0x000000002411st initialization time after partitioningINI TIMEOU