重大电气级专业英语考试427v5.docx

重大电气级专业英语考试427v5.docx

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重大电气级专业英语考试427v5

致谢：

本答案由427倾力奉献，感谢427所有成员的积极参与。

427v5

∙（CombiningthecontentoftheW1andW3）DetailedunderstandingofthesinglesidedanddoublesidedpackagingofIGBTanddiode.AbletodescribethedistinctivefeaturesintheSKIMandLexuspackagingpractices.Itisrequiredtohanddrawthepackaginglayers,PCBboardandlabelthemaccordingly.

1.DetailedunderstandingofthesinglesidedanddoublesidedpackagingofIGBTanddiode.（柯）

SinglesidedpackagingofIGBTanddiode

Fig.1PackaginglayersofpowermodulewithoutbaseplateinSKiiPtechnology（housingnotshown）

TheSinglesidedpackagingofIGBTanddiodeintheSKIMisshowninFig.1.Herenobaseplateisused.Thiseliminatesthelargeareasolderconnectionstotallyandreplacesthembyapressurecontact.ThelargeareajointbetweenDBCsubstrateandheatsinkisnotsolderedandthesubstratehastheabilityto“move”ontheheatsinkwithvirtuallynolimitationintermsoftemperaturecyclingreliability.TheDBCsubstratewiththepowerdiesispresseddirectlytotheheatsink.Multiplepressurecontactsnexttoeachdieareused,keepingtheDBCflatandnobimetaleffectknownfrommoduleswithbaseplatesisdisturbingthethermalperformance.Thisallowsathinnerlayerofthermalgrease（typ.20μm）comparedtomoduleswithbaseplate（typ.100μm）.Sincethethermalconductivityofthermalgreaseisonlyabout1W/mK,thishasansignificantimpactontheoverallsystemperformance,givingmoduleswithoutbaseplatethesamethermalperformanceofmoduleswithacopperbaseplatebutwithasuperiorreliabilitycomparabletoanAlSiCbaseplatedesign.

PCBboard:

DoublesidedpackagingofIGBTanddiode

Fig.2.ProfileofLexusPEsmodule（doublesidedpackaging）.

AprofileofthelayersintheLexusPEsmoduleisgiveninFig.2.Ceramicsilicon（Si）nitrideplatesarelocatedbetweenthepowermodulesandthecoolingchannelsforelectricalinsulationandthermalgreaseispresentonbothsidesoftheceramicplatestoimprovethermalconductivitybetweenthesurfaces.Theentiremoduleisenclosedinsideablackmolding,whichaccordingtomaterialanalysisisprimarilycomprisedofSi.TheIGBTanddiodeissoldereddirectlytothecollectorplateandsolderisusedoneachsideofthetwoconductivespacers.

Double-sidedcoolingtechniquewhichincorporatesaPEsmodulewithcoolingplatesforboththecollectorandemittersidesoftheinsulated-gatebipolartransistor（IGBT）,asindicatedinFig.2.Thedouble-sidedcoolingmethodgreatlyincreasesthecapabilitytoremoveheatfromtheIGBTsanddiodesandtherebyreducestheconstraintsplaceduponthesehigh-powersemiconductors.

赛米控IGBT和传统的模块封装的差别：

1.TheDBCsubstratewiththepowerdiesispresseddirectlytotheheatsink.TheChipsthemselvesaresinteredandnotsoldered.

2.Herenobaseplateisused.

2.AbletodescribethedistinctivefeaturesintheSKIMandLexuspackagingpractices.（大林）

2.1thedistinctivefeaturesintheSKIMpackagingpractices.

2.1.1Thepressurecontact-low（低压力触点）profilehousingdesignofSKiMoffersseveraladvantageousfeatures：

♦100%solderfreemodule

♦Solderfreemountingofthedriverwithoutanyadditionalwiringorconnectors

♦Springcontactsfortheauxiliarycontacts

♦AC-,DCterminalsandcontrolunitareseparated

♦17mmheightofthemainterminals

AdvantagesandBenefits

ThechipsinsidetheSKiMmodulearesintered（烧结）notsoldered（焊接）,therebyachievingaveryhighpowercyclingcapability.Thesinterjointisathinsilverlayerthathasasuperiorthermal（热量）resistancethanasolderedjoint.Duetothehighmeltingpoint（熔点）ofsilver（962°C）nojoiningfatigueladingtoanincreasedservicelife.

Theabovementionedfeaturesallowforacompact,flatandlowinductiveinverterdesign.WiththedirectlymounteddriverthebestcontrollabilityoftheIGBTscanbeachievedandnoisesongatewiresorlooseconnectorsareimpossible.

ANSWERS:

WithSKiMSEMIKRONoffersthefirst100%solderfreeIGBTmodule.SKiMisbasedonthewellestablishedSKiiPTechnology.Thismeans,theAl2O3DBC（“directbondedcopper”）substrateisdirectlypressedtotheheatsinkwithoutanybaseplate.

Thepressureisinducedbyapressurepartontop,whichisscrewedtotheheatsink.Thispressurepartpressesviaafoamrubberontothethreemainterminals（plus,minusandAC）.ThesemainterminalsarealowinductancesandwichconstructionandleadthepressuretotheabovementionedDBCsubstrate.Theypresswithmanycontactpointsnexttoeverysinglechip.TherewithaverylowthermalandohmicresistanceRCC’+EE’isachieved.

Thechipsthemselvesaresinteredandnotsoldered.Thesinteringisbasedonasilverpowderwhich

buildsamaterialconnectionwhenpressureandtemperatureisapplied.

IGBTchipsarebasedontwomaindifferentdesignprinciples.Thefirstisrelatedtothegatestructure:

trench-orplanargate.Thesecondmeanspunchthrough（“PT”）ornon-punchthrough（“NPT”）.

赛米控集成模块封装的显著特征：

1.TheDBCsubstratewiththepowerdiesispresseddirectlytotheheatsink.TheChipsthemselvesaresinteredandnotsoldered.TheauxiliarycontactstocontroltheIGBTsaremadewithspringcontacts

2.ThenewSKiM63andSKiM93powermodulesarethenextgenerationofultracompactsixpackpressurecontactmoduleswithoutbaseplate.

3.ThenewSKiMmodulesarethelaminatedinternalbusbarstructure.

4.Theelectricalcircuitisasixpackmodulewith3individualhalfbridgesections.EachhalfbridgesectionhasitsownDCterminalsandanintegratedNTCtemperaturesensor.

5.BothmoduleshavethesameDCterminalpositionsandconstructionprinciple

6.IthasacoolingplateonlyforthecollectorsideoftheIGBT.

雷克萨斯IGBT模块封装的显著特征：

1.Thesetypesofmodulesareoftenreferredtoashavingaflat-packagedorpresspackagedencapsulation.Allshareacommondc-link.

2.AnobviousdiscrepancybetweentheLS600handpreviousdesignsistheabsenceofwirebondconnectionsatoptheIGBTanddiodes,whicharereplacedbytheconductivespacers。

3.ThedoublesidedpackagingofIGBTanddiodehasadouble-sidedcoolerwithcoolingplatesforboththecollectorandemittersidesofIGBT

4.EachmodulecontainsoneIGBTandoneanti-parallel,free-wheeling-diodeandhastwocopperbusbars.

5.TherearetwoconductivespacersthatmatewiththeIGBTanddiodeandtheemitterplate.TheIGBTanddiodeissoldereddirectlytothecollectorplateandsolderisusedoneachsideofthespacers.

6.Themetalbarservesasacompressionspringandaspinssecureeachendofthespring,thecenterofthespringappliesacompressionforcetothestackedcoolingplates.

∙AbletoexplaintheIGBTanddiodepowerlossmechanismasina3-phaseinverteroperationandtheequationsasinthefollowingpaper:

RealisticbenchmarkingofIGBT-moduleswiththehelpofafastandeasytousesimulation-tool

俊伟答案

TheinverteriscomposedmainlybytheIGBT,anditsanti-paralleldiode.Bothworkintheon-offstateandperiodicallyexperiencedavarietyofdynamicandstaticprocess.Eachprocesswillproducetheportionoftheloss,summingtheselosses,thatis,thetotallossoftheswitchingdevice.Thetotallossiscomposedmainlybyconductionlossesandswitching

losses,sothefollowingpartfocusedontheconductionlossesandswitchinglosses.

（1）IGBTlosscalculation:

①conductionlosses：

SincetheIGBTofoneswitchconductsonlyoveronehalfperiodtheconductionlossesaregivenbytheintegrationoftheforwardlosses（VCE0,rCEincludingRCC'+REE'）uptoT0/2，whereT0istheswitchingfrequency:

withτ（t）asthefunctionofpulsepatternwithIGBTturned-on=1andIGBTturned-off=0.τ（t）canbesubstitutedbyafunctionofmodulation（m）andphaseangle（φ）.

Withaninfiniteswitchingfrequencywegetthedutycyclevariationovertime（PWMpattern）.

Insertingτ（t）intotheformulaandsolvingtheintegralwegettheconductionlosses:

Thesimulation-toolrestrictsthemodulationindextom≤1,whichisthelinearmodeofthePWM.

②switchinglosses：

Theswitchinglossesarethesumofallturn-onandturn-offenergiesattheswitchingevents.

Themeasuredturn-onandturn-offenergiesgiveninthedata-sheetcanbedescribedasa

polynomialfunction（Esw=f（I））:

SincetheDC-linkvoltagecanvaryindifferentapplicationsthedependenceoftheswitching

energyontheDC-voltageneedstobeconsidered.Withincertainlimitsthisdependencecanbeassumedlinear:

Tocalculatetheswitchinglossestheswitchingenergieshavetobeaddedup.

whereasndependsontheswitchingfrequency.Thereforewecancalculatetheswitchinglossesasafunctionofphase-currentandswitchingfrequency.

ThetotalIGBTlossesarethesumoftheconduction-andswitchinglosses:

（2）Diodelosscalculation

ThediodelossescanbenearlycalculatedthesamewayastheIGBT.Sincethefreewheeling

diodeconductswhentheIGBTisturned-offthefunctionofthepulsepatternhastobenegated:

Incaseofthediodetheturn-onenergycanbeneglected.Thereforeonlytherecoveryenergy

counts.Therecoveryenergygiveninthedatasheetdiagramcanbedescribedasapolynomial

function:

TherecoverylossesasafunctionofphasecurrentandswitchingfrequencyandVDCcanbe

writtenas:

ThetotalDiodelossesarethesumoftheconduction-andswitchinglosses:

∙Abletoexplainthecompleteproceduresofspeedorpositioncontrollerdesignusingtheroot-locusdesignmethodology.Anactualexamplemightbegiventotesthowwellyouexplainthephysicalsystemmodelingandthedesignoftheclosedloopcontrollerforthedesiredsystemperformance.

theDCmotorspeedmodelingprocess:

1.assume

wewillassumethatthe