光电传感器中英文对照版.docx

光电传感器中英文对照版.docx

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光电传感器中英文对照版

Photoelectricsensor

Keyword:

photoelectriceffectphotoelectricelementphotoelectricsensorclassificationsensorapplicationcharacteristics.

Abstract:

intherapiddevelopmentofscienceandtechnologyinthemodernsociety,mankindhasintotherapidlychanginginformationera,peopleindailylife,theproductionprocess,relymainlyonthedetectionofinformationtechnologybyacquiring,screeningandtransmission,toachievethebrakecontrol,automaticadjustment,atpresentourcountryhasputdetectiontechniqueslistedinoneoftheprioritytothedevelopmentofscienceandtechnology.Becauseofmicroelectronicstechnology,photoelectricsemiconductortechnology,opticalfibertechnologyandgratingtechnicaldevelopmentmakestheapplicationofthephotoelectricsensorisgrowing.Thesensorhassimplestructure,non-contact,highreliability,highprecision,measurableparametersandquickresponseandmoresimplestructure,formetc,andflexibleinautomaticdetectiontechnology,ithasbeenwidelyappliedinphotoelectriceffectasthetheoreticalbasis,thedevicebyphotoelectricmaterialcomposition.

Text:

First,theoreticalfoundation-photoelectriceffect

Photoelectriceffectgenerallyhavethephotoelectriceffect,opticaleffect,lightbornvoltseffect.

Thelightshinesinphotoelectricmaterial,accordingtotheelectronicabsorptionmaterialsurfaceenergy,ifabsorbedenergylargeenoughelectronicelectronicwillovercomeboundfrommaterialsurfaceandentertheoutsidespace,whichchangesphotoelectronmaterials,thiskindofphenomenonbecometheconductivityofthephotoelectriceffect

AccordingtoEinstein'sphotoelectroneffect,photonismovingparticles,eachphotonenergyforhv（vforlightfrequency,hforPlanck'sconstant,h=6.63*10-34J/HZ）,thusdifferentfrequencyofphotonshavedifferentenergy,light,thehigherthefrequency,thephotonenergyisbigger.Assumingalltheenergyphotonstophotons,electronicenergywillincrease,increasedenergypartofthefetter,positiveionsusedtoovercomeanotherpartofconvertedintoelectronicenergy.Accordingtothelawofconservationofenergy:

Type,mforelectronicquality,vforelectronicescapingthevelocity,Amicroelectronicstheworkdone.

Fromthetypethatwillmaketheoptoelectroniccathodesurfaceescapethenecessaryconditionsareh>A.Duetothedifferentmaterialshavedifferentescaping,soreactivetoeachkindofcathodematerials,incidentlighthasacertainfrequencyisrestricted,whenthefrequencyofincidentlightunderthisfrequencylimit,nomatterhowthelightintensity,won'tproducephotoelectronlaunch,thisfrequencylimitcalled"redlimit".Thecorrespondingwavelengthfortype,cforthespeedoflight,Areactiveforescaping.

Whenisthesun,itselectronicenergy,absorbtheresistivityreduceconductivephenomenoncalledopticaleffects.Itbelongstothephotoelectriceffectwithin.Whenlightis,ifinsemiconductorelectronicenergybigwithsemiconductorofforbiddenbandwidth,theelectronicenergyfromthevalencebandjumpintotheconductionband,form,andatthesametime,thevalencebandelectronicleftthecorrespondingcavities.Electronics,cavitationremainedinsemiconductor,andparticipateinelectricconductiveoutsideformedunderthecurrentrole.

Inadditiontometalouter,mostinsulatorsandsemiconductorhavephotoelectriceffect,particularlyremarkable,semiconductoropticaleffectaccordingtotheoptoelectronicsmanufacturingincidentlightinherentfrequency,whenlightresistanceinlight,itsconductivityincreases,resistancedrops.Thelightintensityisstrong,itsvalue,ifthesmaller,itsresistancetostoplightbacktotheoriginalvalue.

Semiconductorproducedbylightilluminatethephenomenoniscalledlightemf,bornvoltseffectontheeffectofphotoelectricdeviceshavemadesi-basedones,photoelectricdiode,controlthyristorandopticalcouplers,etc.

Second,optoelectroniccomponentsandcharacteristics

Accordingtotheoutsideoptoelectronicsmanufacturingoptoelectronicdeviceshavephotoelectron,inflatablephototubesandphotoelectrictimesoncetube.

1.Phototubesphototubesarevariousandtypicalproductsarevacuumphototubesandinflatablephototubes,lightitsappearanceandstructureasshowninfigure1shows,madeofcylindricalmetalhalfcathodicKandislocatedinthewirescathodicaxisofanodeinApackageofsmokeintothevacuum,whenincidentlightwithinglassshellinthecathode,illuminateAsinglephotontookallofitsenergytransfertothecathodematerialsAfreeelectrons,soastomakethefreedomelectronicenergyincreaseh.Whenelectronsgainenergymorethanescapeofcathodematerials,itreactiveAmetalsurfaceconstraintscanovercomeescape,formelectronemission.Thiskindofelectroniccalledoptoelectronics,optoelectronicescapingthemetalsurfaceforafterinitialkineticenergy

Phototubesnormalwork,anodepotentialthanthecathode,showninfigure2.Inoneshotmorethan"redlightfrequencyispremise,escapefromtheoptoelectroniccathodesurfacebypositivepotentialattractedtheanodeinphotoelectrictubeformingspace,calledthecurrentstream.Theniflightintensityincreases,thenumberofphotonsbombardedthecathodemultiplied,unitoftimetolaunchphotoelectronnumberarealsoincreasing,photo-currentgreatens.Infigure2showscircuit,currentandresistanceisthevoltagedropacrosstheonlyafunctionoflightintensityrelations,soastoachieveaphotoelectricconversion.WhentheLTToptoelectroniccathodeK,electronicescapefromthecathodesurface,andwasthephotoelectricanodeisanelectriccurrent,powerplantsabsorbdeoxidizationdeviceintheloadresistance-I,thevoltage

Phototubesphotoelectriccharacteristicsfig.03shows,fromthegraphinfluxknowable,nottoobig,photoelectricbasiccharacteristicsisastraightline.

2.Photoelectrictimeshadthesensitivityofvacuumtubeduetolow,sowithpeopledevelopedhasmagnifiedthephotomultipliertubesphoto-currentability.Figure4isphotomultipliertubestructureschematicdrawing.

图4光电倍增结构示意图

FromthegraphcanseephotomultipliertubesalsohaveAcathodeKandananodeA,andphototubesdifferentisinitsbetweenanodeandcathodesetupseveralsecondaryemissionelectrodes,D1,D2andD3...Theycalledthefirstmultiplyelectrode,thesecondmultiplyelectrode,...Usually,doubleelectrodefor10~15levels.Photomultipliertubesworkbetweenadjacentelectrode,keepingacertainminimum,includingthecathodepotentialpotentials,eachmultiplyelectrodepotentialfilteringincreases,theanodepotentialsupreme.Whentheincidentlightirradiation,cathodicKescapefromtheoptoelectroniccathodemultipliedbyfirstaccelerated,byhighspeedelectrodeD1bombardedcausedsecondaryelectronemission,D1,anincidentcangeneratemultiplesecondaryelectronphotonics,D1emitofsecondaryelectronwasD1,D2askedelectricfieldacceleration,convergedonD2andagainproducesecondaryelectronemission...Sograduallyproducesecondaryelectronemission,makeelectronicincreasedrapidly,theseelectronicfinallyarrivedattheanode,formalargeranodecurrent.Ifanlevel,multiplyelectrodesatalllevelsforsigma,themultiplicationofrateisthemultiplicationofphotomultipliertubescanbeconsideredsigmanrate,therefore,photomultipliertubehashighsensitivity.Intheoutputcurrentislessthan1mAcircumstances,itinaverywidephotoelectricpropertieswithinthescopeofthelinearrelationshipwithgood.Photomultipliertubesthischaracteristic,makeitmoreforlightmeasurement.

3andphotoconductiveresistancephotoconductiveresistancewithintheworkingprincipleisbasedonthephotoelectriceffect.Insemiconductorphotosensitivematerialendsofmountelectrodelead,itcontainstransparentwindowsealedinthetubeandshellelementphotoconductiveresistance.Photoconductiveresistancepropertiesandparametersare:

1）darkresistancephotoconductiveresistanceatroomtemperature,totaldarkconditionsstableresistancecalleddarkresistance,atthecurrentflowresistanceiscalleddarkcurrent.

2）lightresistancephotoconductiveresistanceatroomtemperatureandcertainlightingconditionsstableresistancemeasured,rightnowiscalledlightresistanceofcurrentflowresistanceiscalledlightcurrent.

4,volt-amperecharacteristicsofbothendsphotoconductiveresistanceaddedvoltageandcurrentflowsthroughphotoconductiveresistanceoftherelationshipbetweencalledvolt-amperecharacteristicsshown,asshowninfigure5.Fromthegraph,theapproximatelinearvolt-amperecharacteristicsthatuseshouldbelimited,butwhenthevoltageendsphotoconductiveresistance,lestthanshowndottedlinesofpowerconsumptionarea

5,photoelectriccharacteristicsphotoconductiveresistancebetweenthepoles,lightwhenvoltagefixedtherelationshipbetweenwithbrightcurrentphotoelectriccharacteristics.CalledPhotoconductiveresistancephotoelectriccharacteristicsisnonlinear,thisisoneofthemajordrawbackofphotoconductiveresistance.

6,spectralcharacteristicsisnotthesameincidentwavelength,thesensitivityofphotoconductiveresistanceisdifferentalso.Incidencewavelengthandphotodetectortherelationshipbetweenrelativesensitivitycalledspectralcharacteristics.Whenusedaccordingtothewavelengthrangebymetering,choosedifferentmaterialphotoconductiveresistance.

7,responsetimebyphotoconductiveresistanceafterphoto-currentneedlight,overaperiodoftime（time）risetoreachitssteadyvalue.Similarly,instoplightphoto-currentalsoneed,overaperiodoftime（downtime）t