pspice二级管参数总结.docx

pspice二级管参数总结.docx

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pspice二级管参数总结

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OrCADPSpiceDIODEmodelparameter

2010-07-1522:

31

1.从OrCADPSpicehelp文档:

Modelparameters1

Description

Unit

Default

AF

flickernoiseexponent

1.0

BV

reversebteakdov.xkt>eevoltage

vok

♦irfuute

CJO

zeic>-biasp-ncapacitance

farad

0.0

EG

bsuxkapvoltageibaiuciLaght；

eV

1.11

FC

fbx-ASidbiisdepletioncapacitancecoefficient

0.5

IBVL

k>v.-levdreversebi&k&>\vnkneecinteni

砂〉

0.0

IBV

reversebteskdo^kneecuhm

anip

IE-10

IKF

high-injectionkneecutient

吨

infinite

IS

satuxationcuxrewt

23Hp

IE-14

ISR

Tecombuiatiosieinrempaxametei

G.O

KF

flickernoisecoeffioienl

0.0

¥

p-ticradmcoc^efficieiit

0.5

emissioncoeffizieut

1.0

NBV

Te\er$ebreakdownideaBhfactot

1.0

2.国外网站的相

SPICEDiodeMo

k>w-le\-elTevei疋breakdownidealityfactoi

10

NR

emissionooeffitSentforia

20

RS

paiaodtkresistance

•In

0.0

bvEperahgcoeflkienl（Irnea）

•c-l

0.0

T5V2

bvtcmpeiahnecoefficientfquackatic）

•C-2

0.0

rrxr

iftemjxfature仙迪）

CC-1

0.0

TRS1

rstemp^ranireg曲:

Sarj

CC-1

0.0

TRS2

isteinpetahHecoeffiSent（quadxatk；»

:

C-2

0.0

IT

hansiltiiue

xc

0.0

TASS

absolutetempeiatuie

:

C

TMEASURED

mcasuiirdt-iupeiatuie

■c

TRELGLOSAL

jehir/etocuiientteuipeiatuie

-c

TRZLLOCAL

Rchth-etoAKOtuc-delteiuperature

:

c

p-npotential

wh

1.0

xrr

关介绍：

delParameters

IStMuperarureexpcment

3.0

name

parameter

units

default

example

area

1

IS

saturationcurrent

A

1.Oe-14

1.Oe-14

*

2

RS

ohmicresistanc

Ohm

0

10

*

3

N

emissioncoefficient

1

1.0

4

TT

transit-time

sec

0

0.Ins

5

CJO

zero-biasjunctioncapacitance

F

0

2pF

*

6

VJ

junctionpotential

V

1

0.6

7

M

gradingcoefficient

0.5

0.5

8

EG

band-gapenergy

eV

1.11

1.11Si

9

XTI

saturation-currenttemp・exp

3.0

3.0pn2.0

Schottky

:

10

KF

flickernoisecoefficient

0

11

AF

flickernoiseexponent

—

1

12

FC

coefficientforforward-biasdepletioncapacitanceformula

—

0.5

13

BV

reversebreakdownvoltage

V

infinite

40.0

14

IBV

currentatbreakdownvoltage

V

1.Oe-3

15

TNOM

parametermeasurementtemperature

degC

27

50

TheDCcharacteristicsofthediodearedeterminedbytheparametersIS,N,andtheohmicresistanceRS・Chargestorageeffectsaremodeledbyatransittime,TT,andanonlineardepletionlayercapacitancewhichisdeterminedbytheparametersCJO,VJ,andThetemperaturedependenceofthesaturationcurrentisdefinedbytheparametersEG,thebandgapenergyandXTI,thesaturationcurrenttemperatureexponent・ThenominaltemperatureatwhichtheseparametersweremeasuredisTNOM,whichdefaultstothecircuit-widevaluespecifiedonthe・0PTIONScontrolline・ReversebreakdownismodeledbyanexponentialincreaseinthereversediodecurrentandisdeterminedbytheparametersBVandIBV（bothofwhicharepositivenumbers）・

3.国外网站关于PSpice其它模型的参数介绍：

如（三极管，达林顿管，场效应管，二极管）

Spicemodels

•Introduction

•TheMODmodelfile

•TheZMODELS.LIBlibraryfile

•Modelparametersandlimitations

•Bipolars

•Darlingtons

•MOSFETs

•Diodes

•Furtherinformation

Introduction

ZetexhavecreatedSpicemodelsforarangeofsemiconductorcomponents・ModelsincludedareSchottkyandvaricap,high-performancebipolar（highcurrent,lowVCE（sat））,highervoltagebipolar,bipolarDarlingtonandMOSFETtransistors・Thisrangeiscontinuouslyunderreviewasnewproductsareintroducedandretrospectivemodelsaregeneratedforexistingproducts・

TheSpicemodelsareavailableintwoformats:

1.AseparateSpicemodeltextfileforeachZetexdevicetypeforwhichamodelispresentlyavailable・ThesecanbeaccessedfromtheProductQuickfinder

2.AlltheavailableZetexdevicemodelsarecollectedtogetherintoasingle・LIBtextfilecalledZMODELS・LIB・

AgenericsymbollibraryfileisavailablecalledZETEXM・SLBthatenablesWindows?

versionsofPSpicetousetheZetexspicemodels・Furtherinformationonthesymbollibrary,includinginstallationinstructionswillbefoundinthetextfilecalledZETEXM.TXT

TheMODModelFile

EachofthesefilesisaSpicemodelforasingledevice・TheycanbeloadedintoyoursimulationsimplybyemployingtheSpicecommand〈・includedevice_name・mod>・Onlythedevicetypesspecificallyrequiredbythecircuitundersimulationneedbeincludedinthisway.Alldiodeandbipolartransistormodelsaresimple〈・model>files・However,DarlingtontransistorsandMOSFETmodelsaremulti-componentsubcircuitsandassucharesuppliedas〈・subckt>files・

ThediodemodelsshouldbeincludedincircuitfilesusingthenormalSpicereference・

Bipolartransistormodelsshouldbeincludedusing・

Allothermodelsshouldbereferencedassubcircuitsi・e.intheformforDarlingtontransistors,andforMOSFETs.

TheZMODELS.LIBLibraryFile

Usersmayprefertousethemodellibrary.Thislibraryisa

collectionofallZetexSpicemodelsexactlyastheyappearintheindividualmodelfiles・Byusingthestatement〈・libzmodels・lib>,Spicewillbeabletoaccessanymodelwithinthelibrarywithouttheneedformultiple〈・include〉statements・

Note：

Allsubcircuits,whetherinthelibraryorasindividualmodelfilesusethesameconnectionsequenceasSpiceforsingleelementmodels,thuseasingtheiruse・

Modelparametersandlimitations

•Bipolars

•Darlingtons

•MOSFETs

•Diodes

Bipolars

AllbipolartransistorandDarlingtonmodelsarebasedonSpice'smodifiedGummel-Poonmode1.Atypicalmodelforasingletransistorisshownasfollows：

水ZetexFMMT493ASpiceModelvl.0LastRevised30/3/06

.MODELFMMT493ANPNIS二6E-14NF=0.99BF=1100IKF二1.1

+NK二0.7VAF二270ISE二0.3E-14NE=1.26NR=0.98BR=70IKR二0.5

+VAR二27ISC=1.2e-13NC=1.2RB=0.2RE二0・08RC二0・08RCO=8

+GAMMA二3E-9CJC=15.9E-12MJC=O.4VJC=O.51CJE二108E-12

+MJE二0.35VJE二0.7TF二0.8E-9TR=55e-9XTB二1.4QUASIMODO

Inthebipolarmodel:

•ISandNFcontrolIcboandthevalueofIcatmediumbiaslevels・

•ISEandNEcontrolthefallinhFEthatoccursatlowIc.

•BFcontrolspeakforwardhFEandXTBcontrolshowitvarieswithtemperature・

•BRcontrolspeakreversehFEi・e.collectorandemitterreversed・

•IKFandNKcontrolthecurrentandtherateatwhichhFEfallsathighcollectorcurrents・

•IKRcontrolswherereversehFEfallsathighemittercurrents・

•ISCandNCcontrolsthefallofreversehFEatlowcurrents・

•RC,RBandREaddseriesresistancetothesedeviceterminals・

•VAFcontrolsthevariationofcollectorcurrentwithvoltagewhenthetransistorisoperatedinitslinearregion.

•VARisthereverseversionofVAF.

•CJC,VJCandMJCcontrolCcbandhowitvarieswithVcb.

•CJE,VJEandMJEcontrolCbeCcbandhowitvarieswithVeb.

•TFcontrolsFtandswitchingspeeds・

•TRcontrolsswitchingstoragetimes・

•RCO,GAMMA,QUASIMODcontrolthequasi-saturationregion.

SomestandardbipolartransistorSpicemodelsmaynotincludeaparameterthatallowsBF,thehFEparameter,tovarywithtemperature・IfXTBisabsentitdefaultstozero,e.g・notemperaturedependence・IfhFEtemperatureeffectsareofinterestandXTBisnotmodeledthenthefollowingvaluesmaybeusedtoprovideanestimateorastartingpointforfurtherinvestigation:

Polarity

XTB

NPN

1.6

PNP

1.9

ItissuggestedthattheappropriatedatasheethFEprofileisexamined,andaSpicetestcircuitcreatedthatsimulatesthedeviceinquestionandgeneratesasetofhFEcurves・TwoorthreesuchiterationsshouldnormallybesufficienttodefineavalueforXTBineachcase・Pleaserememberthatthesenotesareonlyaroughguideastotheeffectofmodelparameters・Also,manyoftheparametersareinterdependentsoadjustingoneparametercanaffectmanydevicecharacteristics・

AtZetex,wehaveendeavoredtomakethemodelsperformascloselytoactualsamplesaspossiblebutsomecompromisesareforcedwhichcanresultinsimulationerrorsundersomecircumstances・Themainareasof

errorobservedsofarhavebeen:

•SpiceisoftenoveroptimisticinthehFEatransistorwillgivewhenoperatedaboveitsdatasheetcurrentratings・Thisisparticularlytrueforahighvoltagetransistoroperatedatalowcollector-emittervoltageandquasi-saturationparametersRCO,GAMMAandQUASIMODhavebeenintroducedtoimprovethemodelsinthisregion.

•Spicecanbepessimisticwhenpredictingswitchingstoragetimewhencurrentisextractedfromthebaseofatransistortospeedturn-off.

Darlingtons

Thesearesubcircuitsusingastandardtransistormode1.ADarlingtonmodelisshownasfollows：

•

:

xZetexFZT605SpiceModelvl.0Lastrevision27/04/05

*

.SUBCKTFZT605123

*CBE

QI124SUB605

Q2143SUB6053.46

*

.MODELSUB605NPNIS二4.8E-14BF二170etc.

・ENDSFZT605:

:

:

Note:

BecauseZetexDarlingtonsaremonolithic,thetwotransistorsusedareidenticalinallrespectsotherthansize・（ThenumberattheendoftheQ2linemultipliesthesizeoftheSUB605transistorby3.46-theratiooftheareasoftheinputandoutputtransistorsforthisdevice）・

MOSFETs

NoneofSpice'sstandardMOSFETmodelsfitthecharacteristicsoftrenchorverticalMOSFETstoowel1・ConsequentlythemodelsofMOSFET'ssuppliedhavebeenmadeusingsubcircuitsthatincludeadditionalcomponentstoimprovesimulationaccuracy・AtypicallesscomplexMOSFETmodelisshownasfollows：

*

*ZETEXZXMN3A14FSpiceModel