pspice二级管参数总结.docx

1、pspice二级管参数总结査看文章OrCAD PSpice DIODE model parameter2010-07-15 22:311.从 OrCAD PSpice help 文档:Model parameters1DescriptionUnitDefaultAFflicker noise exponent1.0BVreverse bteakdov.x ktee voltagevokirfuuteCJOzeic-bias p-n capacitancefarad0.0EGbsuxkap voltage ibaiuci Laght；eV1.11FCfbx-A Sid biis depletio

2、n capacitance coefficient0.5IBVLkv. -levd reverse bi&k&vn knee cinteni砂0.0IBVreverse bteskdo knee cuhmanipIE-10IKFhigh-injection knee cutient吨infiniteISsatuxation cuxrewt23HpIE-14ISRTecombuiatiosi einrem paxameteiG.OKFflicker noise coeffioienl0.0p-ti cradmc ocefficieiit0.5emission coeffizieut1.0NBVT

3、eer$e breakdown ideaBh factot1.02.国外网站的相SPICE Diode Mokw-le-el Tevei疋 breakdown ideality factoi10NRemission ooeffitSent for ia20RSpaiaodtk resistanceIn0.0bv Eperahg coeflkienl (Irnea)c-l0.0T5V2bv tcmpeiahne coefficient fquackatic)C-20.0rrxrif temjxfature 仙迪)CC-10.0TRS1rs tempranire g曲:SarjCC-10.0TRS

4、2is teinpetahHe coeffiSent (quadxatk；:C-20.0IThansil tiiuexc0.0T ASSabsolute tempeiatuie:CT MEASUREDmcasuiird t-iupeiatuiecT REL GLOSALjehir/e to cuiient teuipeiatuie-cT RZL LOCALRchth-e to AKO tuc-del teiuperature:cp-n potentialwh1.0xrr关介绍：del ParametersIS tMuperarure expcment3.0nameparameterunitsd

5、efaultexamplearea1ISsaturation currentA1. Oe-141. Oe-14*2RSohmic resistancOhm010*3Nemission coefficient11.04TTtransit-timesec00. Ins5CJOzero-bias junction capacitanceF02pF*6VJjunction potentialV10.67Mgrading coefficient0.50.58EGband-gap energyeV1. 111. 11 Si9XTIsaturation-current temp exp3.03. 0 pn

6、2. 0Schottky:10KFflicker noise coefficient011AFflicker noise exponent112FCcoefficient for forward-bias depletion capacitance formula0.513BVreverse breakdown voltageVinfinite40.014IBVcurrent at breakdown voltageV1. Oe-315TNOMparameter measurement temperaturedeg C2750The DC characteristics of the diod

7、e are determined by the parameters IS, N, and the ohmic resistance RS Charge storage effects are modeled by a transit time, TT, and a nonlinear depletion layer capacitance which is determined by the parameters CJO, VJ, and The temperature dependence of the saturation current is defined by the parame

8、ters EG, the band gap energy and XTI, the saturation current temperature exponent The nominal temperature at which these parameters were measured is TNOM, which defaults to the circuit-wide value specified on the 0PTIONS control line Reverse breakdown is modeled by an exponential increase in the rev

9、erse diode current and is determined by the parameters BV and IBV (both of which are positive numbers)3.国外网站关于PSpice其它模型的参数介绍：如(三极管，达林顿管，场效 应管，二极管)Spice modelsIntroductionThe MOD model file The ZMODELS. LIB library fileModel parameters and limitationsBipolarsDarlingtonsMOSFETsDiodesFurther informati

10、onIntroductionZetex have created Spice models for a range of semiconductor components Models included are Schottky and varicap, high-performance bipolar (high current, low VCE(sat), higher voltage bipolar, bipolar Darlington and MOSFET transistors This range is continuously under review as new produ

11、cts are introduced and retrospective models are generated for existing productsThe Spice models are available in two formats:1.A separate Spice model text file for each Zetex device type for which a model is presently available These can be accessed from the Product Quickfinder2.All the available Ze

12、tex device models are collected together into a single LIB text file called ZMODELSLIBA generic symbol library file is available called ZETEXMSLB that enables Windows? versions of PSpice to use the Zetex spice models Further information on the symbol library, including installation instructions will

13、 be found in the text file called ZETEXM.TXTThe MOD Model FileEach of these files is a Spice model for a single device They can be loaded into your simulation simply by employing the Spice command include device_namemod Only the device types specifically required by the circuit under simulation need

14、 be included in this way. All diode and bipolar transistor models are simple model files However, Darlington transistors and MOSFET models are multi-component subcircuits and as such are supplied as subckt filesThe diode models should be included in circuit files using the normal Spice reference Bip

15、olar transistor models should be included using All other models should be referenced as subcircuits i e. in the form for Darlington transistors, and for MOSFETs.The ZMODELS. LIB Library FileUsers may prefer to use the model library. This library is acollection of all Zetex Spice models exactly as t

16、hey appear in the individual model files By using the statement lib zmodels lib, Spice will be able to access any model within the library without the need for multiple include statementsNote：All subcircuits, whether in the library or as individual model files use the same connection sequence as Spi

17、ce for single element models, thus easing their useModel parameters and limitationsBipolarsDarlingtonsMOSFETsDiodesBipolarsAll bipolar transistor and Darlington models are based on Spices modified Gummel-Poon mode1. A typical model for a single transistor is shown as follows：水Zetex FMMT493A Spice Mo

18、del vl. 0 Last Revised 30/3/06.MODEL FMMT493A NPN IS 二6E-14 NF =0. 99 BF =1100 IKF二1. 1+NK二0. 7 VAF二270 ISE二0. 3E-14 NE =1. 26 NR =0. 98 BR =70 IKR二0. 5+VAR二27 ISC=1. 2e-13 NC =1. 2 RB =0. 2 RE 二0 08 RC 二0 08 RCO=8+GAMMA二3E-9 CJC=15. 9E-12 MJC=O. 4 VJC=O. 51 CJE二108E-12+MJE二0. 35 VJE二0. 7 TF 二0. 8E-

19、9 TR =55e-9 XTB二 1. 4 QUASIMODOIn the bipolar model:IS and NF control Icbo and the value of Ic at medium bias levelsISE and NE control the fall in hFE that occurs at low Ic.BF controls peak forward hFE and XTB controls how it varies with temperatureBR controls peak reverse hFE ie. collector and emit

20、ter reversedIKF and NK control the current and the rate at which hFE falls at high collector currentsIKR controls where reverse hFE falls at high emitter currentsISC and NC controls the fall of reverse hFE at low currentsRC, RB and RE add series resistance to these device terminalsVAF controls the v

21、ariation of collector current with voltage when the transistor is operated in its linear region.VAR is the reverse version of VAF.CJC, VJC and MJC control Ccb and how it varies with Vcb.CJE, VJE and MJE control Cbe Ccb and how it varies with Veb.TF controls Ft and switching speedsTR controls switchi

22、ng storage timesRCO, GAMMA, QUASIMOD control the quasi-saturation region.Some standard bipolar transistor Spice models may not include a parameter that allows BF, the hFE parameter, to vary with temperature If XTB is absent it defaults to zero, e. g no temperature dependence If hFE temperature effec

23、ts are of interest and XTB is not modeled then the following values may be used to provide an estimate or a starting point for further investigation:PolarityXTBNPN1.6PNP1.9It is suggested that the appropriate datasheet hFE profile is examined, and a Spice test circuit created that simulates the devi

24、ce in question and generates a set of hFE curves Two or three such iterations should normally be sufficient to define a value for XTB in each case Please remember that these notes are only a rough guide as to the effect of model parameters Also, many of the parameters are interdependent so adjusting

25、 one parameter can affect many device characteristicsAt Zetex, we have endeavored to make the models perform as closely to actual samples as possible but some compromises are forced which can result in simulation errors under some circumstances The main areas oferror observed so far have been:Spice

26、is often over optimistic in the hFE a transistor will give when operated above its data sheet current ratings This is particularly true for a high voltage transistor operated at a low collector-emitter voltage and quasi-saturation parameters RCO, GAMMA and QUASIMOD have been introduced to improve th

27、e models in this region.Spice can be pessimistic when predicting switching storage time when current is extracted from the base of a transistor to speed turn- off.DarlingtonsThese are subcircuits using a standard transistor mode1. A Darlington model is shown as follows：:xZetex FZT605 Spice Model vl.

28、 0 Last revision 27/04/05*.SUBCKT FZT605 1 2 3*C B EQI 1 2 4 SUB605Q2 1 4 3 SUB605 3.46*.MODEL SUB605 NPN IS二4. 8E-14 BF二170 etc. ENDS FZT605 :Note:Because Zetex Darlingtons are monolithic, the two transistors used are identical in all respects other than size(The number at the end of the Q2 line mu

29、ltiplies the size of the SUB605 transistor by 3.46 - the ratio of the areas of the input and output transistors for this device)MOSFETsNone of Spices standard MOSFET models fit the characteristics of trench or vertical MOSFETs too wel1 Consequently the models of MOSFETs supplied have been made using subcircuits that include additional components to improve simulation accuracy A typical less complex MOSFET model is shown as follows：*ZETEX ZXMN3A14F Spice Model