pspice二级管参数总结.docx

pspice二级管参数总结.docx

《pspice二级管参数总结.docx》由会员分享，可在线阅读，更多相关《pspice二级管参数总结.docx（10页珍藏版）》请在冰豆网上搜索。

pspice二级管参数总结

查看文章

OrCADPSpiceDIODEmodelparameter

2010-07-1522:

31

1.从OrCADPSpicehelp文档：

2.国外网站的相关介绍：

SPICEDiodeModelParameters

name

parameter

units

default

example

area

1

IS

saturationcurrent

A

1.0e-14

1.0e-14

*

2

RS

ohmicresistanc

Ohm

0

10

*

3

N

emissioncoefficient

-

1

1.0

4

TT

transit-time

sec

0

0.1ns

5

CJO

zero-biasjunctioncapacitance

F

0

2pF

*

6

VJ

junctionpotential

V

1

0.6

7

M

gradingcoefficient

-

0.5

0.5

8

EG

band-gapenergy

eV

1.11

1.11Si

9

XTI

saturation-currenttemp.exp

-

3.0

3.0pn2.0Schottky

10

KF

flickernoisecoefficient

-

0

11

AF

flickernoiseexponent

-

1

12

FC

coefficientforforward-biasdepletioncapacitanceformula

-

0.5

13

BV

reversebreakdownvoltage

V

infinite

40.0

14

IBV

currentatbreakdownvoltage

V

1.0e-3

15

TNOM

parametermeasurementtemperature

degC

27

50

TheDCcharacteristicsofthediodearedeterminedbytheparametersIS,N,andtheohmicresistanceRS.Chargestorageeffectsaremodeledbyatransittime,TT,andanonlineardepletionlayercapacitancewhichisdeterminedbytheparametersCJO,VJ,andM.ThetemperaturedependenceofthesaturationcurrentisdefinedbytheparametersEG,thebandgapenergyandXTI,thesaturationcurrenttemperatureexponent.ThenominaltemperatureatwhichtheseparametersweremeasuredisTNOM,whichdefaultstothecircuit-widevaluespecifiedonthe.OPTIONScontrolline.ReversebreakdownismodeledbyanexponentialincreaseinthereversediodecurrentandisdeterminedbytheparametersBVandIBV（bothofwhicharepositivenumbers）.

3.国外网站关于PSpice其它模型的参数介绍：

如（三极管，达林顿管，场效应管，二极管）

Spicemodels

●Introduction

●TheMODmodelfile

●TheZMODELS.LIBlibraryfile

●Modelparametersandlimitations

●Bipolars

●Darlingtons

●MOSFETs

●Diodes

●Furtherinformation

Introduction

ZetexhavecreatedSpicemodelsforarangeofsemiconductorcomponents.ModelsincludedareSchottkyandvaricap,high-performancebipolar（highcurrent,lowVCE（sat））,highervoltagebipolar,bipolarDarlingtonandMOSFETtransistors.Thisrangeiscontinuouslyunderreviewasnewproductsareintroducedandretrospectivemodelsaregeneratedforexistingproducts.

TheSpicemodelsareavailableintwoformats:

1.AseparateSpicemodeltextfileforeachZetexdevicetypeforwhichamodelispresentlyavailable.ThesecanbeaccessedfromtheProductQuickfinder

2.AlltheavailableZetexdevicemodelsarecollectedtogetherintoasingle.LIBtextfilecalledZMODELS.LIB.

AgenericsymbollibraryfileisavailablecalledZETEXM.SLBthatenablesWindows?

versionsofPSpicetousetheZetexspicemodels.Furtherinformationonthesymbollibrary,includinginstallationinstructionswillbefoundinthetextfilecalledZETEXM.TXT

TheMODModelFile

EachofthesefilesisaSpicemodelforasingledevice.TheycanbeloadedintoyoursimulationsimplybyemployingtheSpicecommand<.includedevice_name.mod>.Onlythedevicetypesspecificallyrequiredbythecircuitundersimulationneedbeincludedinthisway.Alldiodeandbipolartransistormodelsaresimple<.model>files.However,DarlingtontransistorsandMOSFETmodelsaremulti-componentsubcircuitsandassucharesuppliedas<.subckt>files.

ThediodemodelsshouldbeincludedincircuitfilesusingthenormalSpicereference.

Bipolartransistormodelsshouldbeincludedusing.

Allothermodelsshouldbereferencedassubcircuitsi.e.intheformforDarlingtontransistors,andforMOSFETs.

TheZMODELS.LIBLibraryFile

Usersmayprefertousethemodellibrary.ThislibraryisacollectionofallZetexSpicemodelsexactlyastheyappearintheindividualmodelfiles.Byusingthestatement<.libzmodels.lib>,Spicewillbeabletoaccessanymodelwithinthelibrarywithouttheneedformultiple<.include>statements.

Note:

Allsubcircuits,whetherinthelibraryorasindividualmodelfilesusethesameconnectionsequenceasSpiceforsingleelementmodels,thuseasingtheiruse.

Modelparametersandlimitations

●Bipolars

●Darlingtons

●MOSFETs

●Diodes

Bipolars

AllbipolartransistorandDarlingtonmodelsarebasedonSpice'smodifiedGummel-Poonmodel.Atypicalmodelforasingletransistorisshownasfollows:

*ZetexFMMT493ASpiceModelv1.0LastRevised30/3/06

*

.MODELFMMT493ANPNIS=6E-14NF=0.99BF=1100IKF=1.1

+NK=0.7VAF=270ISE=0.3E-14NE=1.26NR=0.98BR=70IKR=0.5

+VAR=27ISC=1.2e-13NC=1.2RB=0.2RE=0.08RC=0.08RCO=8

+GAMMA=5E-9CJC=15.9E-12MJC=0.4VJC=0.51CJE=108E-12

+MJE=0.35VJE=0.7TF=0.8E-9TR=55e-9XTB=1.4QUASIMOD=1

*

Inthebipolarmodel:

●ISandNFcontrolIcboandthevalueofIcatmediumbiaslevels.

●ISEandNEcontrolthefallinhFEthatoccursatlowIc.

●BFcontrolspeakforwardhFEandXTBcontrolshowitvarieswithtemperature.

●BRcontrolspeakreversehFEi.e.collectorandemitterreversed.

●IKFandNKcontrolthecurrentandtherateatwhichhFEfallsathighcollectorcurrents.

●IKRcontrolswherereversehFEfallsathighemittercurrents.

●ISCandNCcontrolsthefallofreversehFEatlowcurrents.

●RC,RBandREaddseriesresistancetothesedeviceterminals.

●VAFcontrolsthevariationofcollectorcurrentwithvoltagewhenthetransistorisoperatedinitslinearregion.

●VARisthereverseversionofVAF.

●CJC,VJCandMJCcontrolCcbandhowitvarieswithVcb.

●CJE,VJEandMJEcontrolCbeCcbandhowitvarieswithVeb.

●TFcontrolsFtandswitchingspeeds.

●TRcontrolsswitchingstoragetimes.

●RCO,GAMMA,QUASIMODcontrolthequasi-saturationregion.

SomestandardbipolartransistorSpicemodelsmaynotincludeaparameterthatallowsBF,thehFEparameter,tovarywithtemperature.IfXTBisabsentitdefaultstozero,e.g.notemperaturedependence.IfhFEtemperatureeffectsareofinterestandXTBisnotmodeledthenthefollowingvaluesmaybeusedtoprovideanestimateorastartingpointforfurtherinvestigation:

Polarity

XTB

NPN

1.6

PNP

1.9

ItissuggestedthattheappropriatedatasheethFEprofileisexamined,andaSpicetestcircuitcreatedthatsimulatesthedeviceinquestionandgeneratesasetofhFEcurves.TwoorthreesuchiterationsshouldnormallybesufficienttodefineavalueforXTBineachcase.Pleaserememberthatthesenotesareonlyaroughguideastotheeffectofmodelparameters.Also,manyoftheparametersareinterdependentsoadjustingoneparametercanaffectmanydevicecharacteristics.

AtZetex,wehaveendeavoredtomakethemodelsperformascloselytoactualsamplesaspossiblebutsomecompromisesareforcedwhichcanresultinsimulationerrorsundersomecircumstances.Themainareasoferrorobservedsofarhavebeen:

●SpiceisoftenoveroptimisticinthehFEatransistorwillgivewhenoperatedaboveitsdatasheetcurrentratings.Thisisparticularlytrueforahighvoltagetransistoroperatedatalowcollector-emittervoltageandquasi-saturationparametersRCO,GAMMAandQUASIMODhavebeenintroducedtoimprovethemodelsinthisregion.

●Spicecanbepessimisticwhenpredictingswitchingstoragetimewhencurrentisextractedfromthebaseofatransistortospeedturn-off.

Darlingtons

Thesearesubcircuitsusingastandardtransistormodel.ADarlingtonmodelisshownasfollows:

*

*ZetexFZT605SpiceModelv1.0Lastrevision27/04/05

*

.SUBCKTFZT605123

*CBE

Q1124SUB605

Q2143SUB6053.46

*

.MODELSUB605NPNIS=4.8E-14BF=170etc.

.ENDSFZT605

*

*$

Note:

BecauseZetexDarlingtonsaremonolithic,thetwotransistorsusedareidenticalinallrespectsotherthansize.（ThenumberattheendoftheQ2linemultipliesthesizeoftheSUB605transistorby3.46-theratiooftheareasoftheinputandoutputtransistorsforthisdevice）.

MOSFETs

NoneofSpice'sstandardMOSFETmodelsfitthecharacteristicsoftrenchorverticalMOSFETstoowell.ConsequentlythemodelsofMOSFET'ssuppliedhavebeenmadeusingsubcircuitsthatincludeadditionalcomponentstoimprovesimulationaccuracy.AtypicallesscomplexMOSFETmodelisshownasfollows:

*

*ZETEXZXMN3A14FSpiceModelv1.0Lastrevision31/5/06

*

.SUBCKTZXMN3A14F304050

*------connections-------D-G-S

M16255NmodL=1.16E-6W=0.76

M25256PmodL=1.3E-6W=0.35

RG424.5

RIN251E12

RD36Rmod0.04

RS555Rmod0.015

RL353E9

C1258.5E-12

C2343E-12

D153Dbodymod

LD3300.5E-9

LG4401.0E-9

LS55501.0E-9

.MODELNmodNMOS（LEVEL=3TOX=5.5E-8NSUB=5E16VTO=2.13

+KP=2.5E-5NFS=2E11KAPPA=0.06UO=650IS=1E-15N=10）

.MODELPmodPMOS（LEVEL=3TOX=5.5E-8NSUB=1.5E16

+TPG=-1IS=1E-15N=10）

.MODELDbodymodD（IS=6E-13RS=.025IKF=0.1TRS1=1.5e-3

+CJO=150e-12BV=33TT=12e-9）

.MODELRmodRES（TC1=2.8e-3TC2=0.8E-5）

.ENDSZXMN3A14F

*

*$

*

IntheMOSFETmodel:

●Lrelatestoaprocessparameter.

●Wrelatestoaprocessparameter.

●TOXrelatestoaprocessparameter.

●NSUBrelatestoaprocessparameter.

●VTOdefinesVgs（th）.

●KPcontrolsGm.

●NFSfastsurfacestatedensity.

●KAPPAsaturationfieldfactor.

●UOmobility.

●RSandRDaddseriesterminalresistancewithtemperaturecharacteristicmodeled.

●ISandNsuppressthebehavioroftheMOSFETmodel'sdefaultbodydiode.

●CGDO,derivedfromprocessrelatedparameters,controlsCrss.

●CGSO,derivedfromprocessrelatedparameters,controlsCiss.

●CBD,derivedfromprocessrelatedparameters,c