30VP沟道增强型MOSFETMOS管精.docx

30VP沟道增强型MOSFETMOS管精.docx

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30VP沟道增强型MOSFETMOS管精

30VP-ChannelEnhancement-ModeMOSFET

VDS（V=-30V

RDS（ON<70mΩ（VGS=-10VRDS（ON<80mΩ（VGS=-4.5VRDS（ON<120mΩ（VGS=-2.5V

XP3401L

3

1

2

SOT–23（TO–236AB

FEATURES

Advancedtrenchprocesstechnology

HighDensityCellDesignForUltraLowOn-ResistanceORDERINGINFORMATION

Device

XP3401LXP3401L-3G

Marking

A1A1

Shipping

3000/Tape&Reel10000/Tape&Reel

MAXIMUMRATINGS（TA=25Cunlessotherwisenoted

Parameter

Drain-SourceVoltage

Gate-SourceVoltageContinuousDrainTA=25°C

A

CurrentTA=70°C

PulsedDrainCurrent

TA=25°C

PowerDissipation

A

o

SymbolVDSVGSIDIDMPDTJ,TSTG

o

Maximum

-30±12-4.2-3.5-301.41-55to150

UnitsVVA

TA=70°C

W°C

JunctionandStorageTemperatureRange

THERMALCHARACTERISTICS（TA=25Cunlessotherwisenoted

Parameter

MaximumJunction-to-AmbientMaximumJunction-to-AmbientC

MaximumJunction-to-Lead

Symbol

t≤10s

Steady-StateSteady-State

2

RθJARθJL

Typ658543Max9012560Units°C/W

°C/W°C/W

A:

ThevalueofRθJAismeasuredwiththedevicemountedon1inFR-4boardwith2oz.Copper,inastillairenvironmentwithTA=25°C.Thevalueinanygivenapplicationdependsontheuser'sspecificboarddesign.Thecurrentratingisbasedonthet≤10sthermalresistancerating.

B:

Repetitiverating,pulsewidthlimitedbyjunctiontemperature.

C.TheRθJAisthesumofthethermalimpedencefromjunctiontoleadRθJLandleadtoambient.

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ELECTRICALCHARACTERISTICS（TA=25CunlessotherwisenotedSymbolParameterSTATICPARAMETERSBVDSSDrain-SourceBreakdownVoltageIDSSIGSSVGS（thID（ONRDS（ON

ZeroGateVoltageDrainCurrentGate-BodyleakagecurrentGateThresholdVoltageOnstatedraincurrent

ConditionsID=-250µA,VGS=0VVDS=-24V,VGS=0V

TJ=55°C

VDS=0V,VGS=±12VVDS=VGSID=-250µAVGS=-4.5V,VDS=-5VVGS=-10V,ID=-4.2A

StaticDrain-SourceOn-Resistance

VGS=-4.5V,ID=-4A

7

11-0.75

-0.7-25

-1

Min-30

-1-5±100-1.37080120-1-2.2

Typ

Max

UnitsVµAnAVAmΩmΩmΩSVApFpFpFΩnCnCnCnsnsnsnsnsnC

o

gFSVSDIS

VGS=-2.5V,ID=-1AVDS=-5V,ID=-5AForwardTransconductance

IS=-1A,VGS=0VDiodeForwardVoltage

MaximumBody-DiodeContinuousCurrent

DYNAMICPARAMETERSCissInputCapacitanceCossOutputCapacitanceCrssReverseTransferCapacitanceRgGateresistanceSWITCHINGPARAMETERSQgTotalGateChargeQgsGateSourceChargeQgdtD（ontr

tD（offtftrrQrr

GateDrainChargeTurn-OnDelayTimeTurn-OnRiseTimeTurn-OffDelayTimeTurn-OffFallTime

VGS=0V,VDS=-15V,f=1MHzVGS=0V,VDS=0V,f=1MHz

9541157769.4236.33.238.21220.211.2

VGS=-4.5V,VDS=-15V,ID=-4A

VGS=-10V,VDS=-15V,RL=3.6Ω,RGEN=6Ω

IF=-4A,dI/dt=100A/µsBodyDiodeReverseRecoveryTime

BodyDiodeReverseRecoveryChargeIF=-4A,dI/dt=100A/µs

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TYPICALELECTRICALCHARACTERISTICS

XP3401L

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XP3401L

TYPICALELECTRICALCHARACTERISTICS

54-VGS（Volts

321

200

00

2

4

6

8

10

12

-Qg（nC

Figure7:

Gate-ChargeCharacteristics

00

5

10

15

20

25

30

-VDS（Volts

Figure8:

CapacitanceCharacteristics

14001200Capacitance（pF

1000800600400

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XP3401L

SOT-

23

NOTES:

V

1.DIMENSIONINGANDTOLERANCINGPERANSIY14.5M,1982

2.CONTROLLINGDIMENSION:

INCH.DIMABCDGHJKLSV

INCHESMINMAX0.11020.11970.04720.05510.03500.04400.01500.02000.07010.08070.00050.00400.00340.00700.01400.02850.03500.04010.08300.10390.01770.0236

MILLIMETERS

MINMAX2.803.041.201.400.891.110.370.501.782.040.0130.1000.0850.1770.350.690.891.022.102.640.450.60

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