光刻胶参数大全.docx
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光刻胶参数大全
SummaryofPhotoresists
4000rpm
Typeapplication/conditionDo[µm]
product
sprayresistsforcomplextopologies[6]AR-P1250
sprayresistfordifferentapplications[0,5-10]AR-P1210,1220,1230new
Positiveresists
productionofmasks,opticalapplications1,0;0,6AR-P3110,3120
thickresistswithhighstruct.accuracyupto40µm10;5AR-P3210,3250
thickresistwithhightransparencyupto100µm10AR-P3220
wideprocessrangeforpatterns<2µm2,0;1,4AR-P3510(T),3540(T)
highresolutionforsub-structures1,4;1,4AR-P3740,3840
protectivecoat.,KOH-resistent,adhesionenlarged1,1;2,2AR-PC503,504
lift-off-structures5;1,0AR-P5320,5350
two-layers-lift-off-systemwithAR-P35101,0;0,5AR-P5460,5480
Image
reversaloptionalpositiveornegative
1,8;1,4;0,6AR-U4030,4040,4060
NewdevelopmentsNegativeresists
spraycoating,fordifferentapplications[0,5-10]AR-N2210,2220,2230new
✆positiveresistsAR-P1210-1230
stablesub-µmstructures,midanddeepUV1,4AR-N4240highresponsetoi-line(g-line,deepUV)1,4AR-N4340
CAR44:
layersupto100µm,aqueousalkalinedevelopment,easytoremove
1000rpm:
10;25;50
AR-N4400-10,-25,-50
additionalforlift-off-structures10AR-N4450-10
experimentalsamples,readyforproduction
resistsforspraycoating
thickresistwithhighvicosityandthermalstability
resistfordeepUV,etchresistant
alkalinestable,ableforstructuring
4000rpm:
6
0,6
1,4
newdevelopments:
XAR-P1270
XAR-P3220/7
XAR-P5800/7
XAR-P5900/4
Processchemicals
thinner:
safersolventAR300-12
developer:
bufferedsystems,concentratAR300-26,300-35developer:
metalionfree,differentconcentrationsAR300-44…-475
Remover:
organicsolventsAR600-70,300-70,-72
Remover:
aqueous-alkalineAR300-73
adhesionpromoterAR300-80,HMDS
✆pricelists:
photoresists,experimentalsamples,AVB
asofJanuary2011
PhotoresistforspraycoatingAR-P1250
1.Generaldescription
TheresistAR-P1250isahighlysensitive,positivelyworkingphotoresistforspraycoatingapplications.Itcontainsasolventmixturewhichfacilitatesafasterdryingofthefilms.
Duetothemodifiedsurfacetension,highlysmoothfilmscanbegeneratedwhichallowanimprovedcoveringoftopologicalstructures.
TheAR-P1250isdesignedforparticularlycomplextopologies.
Theresistcontainsasafersolventmixtureswithmethylethylketoneand(1-methoxy-2-propyl)-acetateasmaincomponents.
2.Parameters
Properties/ResistAR-P1250
Solidcontent%5
Viscosity(25°C)mPa⋅s1
Spraycoating
Resistthicknessdependsonusableequipmentheavy,Testsarenecessary
µm6
2-12
Flashpoint°C10
Filtrationµm0.2
Storage°C10-18
Guaranteefromdateofsalemonth6
3.Processchemicals
DeveloperAR300-35
RemoverAR300-70
4.ProcessingofAR-P1250
Aftertheresisthasbeenadaptedtothetemperatureofthepreferablyair-conditionedworkspace(op-timalconditionsare20-25°Catarelativehumidityof30-50%),theresistisappliedusingaspraycoatingprocedure.Thequalityofthecoatingishighlydependentontherespectivespraycoatingequipmentbeingused.Manuallyadjustableequipmentparameterssuchasdispenserate,scanningspeed,anddistancehaveanimportantinfluenceonthefilmsgenerated.Ownexperimentstodetermineopti-mumparametersareabsolutelyrequired.
WithAR-P1250,filmthicknessvaluesofapprox.4-8µmcanbereachedwhenusingstan-dardparameters.Higherthicknessvaluescaneasilybeobtainedwithhigherdispenseratesormulti-plecoatingsteps.
Afterthecoatingstep,thebakeshouldbeperformedonahotplateat85-90°Cfor2–5min(>6µmfor5min)orinaconvectionovenat85°Cfor25min.
Forexposure,theentireUV-rangefrom300to450nmcanbeused.Thedurationofexposuretimedependsonthefilmsize.Forthicknessvaluesofabout8µm,thesensitivityisonlyapproximately50mJ/cm².Thus,veryshortexposuretimesarepossible,whichisadvantageousinordertoavoidundesir-ablereflectionswhentopologicallystructuredwafersareexposed.
Forthedevelopmentofexposedresistsfilms,DeveloperAR300-35indilutionsof3:
1to1:
1arerecommended.A1:
1-dilutionshouldpreferablybeusedinthosecasewhenedgesofetchedcavitiesarecoveredwithonlythinfilms.Thedevelopmentstepshouldamounttoroughly1-3min(3minfor1:
1-dilutions).
Immediatelyafterdevelopment,resistlayershavetoberinsedanddried.
3.CleaningandRemoval
SubstratesandequipmentscanbecleanedwiththeThinnerAR300-12ortheRemoverAR600-70.Toremovehard-bakedlayersitisrecommendedtousetheRemoverAR300-70or300-72.Veryhard-bakedlayers(plasmaprocessingorUV-stabilization)needatreatmentwithoxidizingacids.
4.WasteWaterDisposal
Wastesmaybedisposedofatcontrolledlandfillsorbycontrolledcombustioninofficiallyauthorizedplants.
5.SafetyReferences
Resist,thinner,andremovercontainorganicsolvents,demandinganadequateventilationintheworkingarea.Developershowanalkalinereactionandmayirritatetheskin.Avoiddirectcontactwithproductsandtheirvapours(wearsafetyglassesandprotectivegloves)!
Pleaseaskforoursafetydatasheets.ofJan.2009
NewdevelopmentPhotoresistseriesforspraycoatingAR-P1200(positive)andAR-N2200(negative)
1.Generaldescription
ResistsoftheseriesAR-P1210-1230aresensitive,positivelyworkingsprayresistsforthreeroutineapplicationswithhighstructuralquality.Theyareprovidedasready-to-useresistsandapplicablewithallcommerciallyavailablespraycoatingdevices.Withtheirotherwisecorrespondingfeatures,theseresistsareequivalenttothenegative-tonesprayresistsofse-riesAR-N2210-2230.
Bothresistseriescontainadifferentcompositionofsolventstoallowadefineddryingoffilmsdependingontherespectivepurposeandareofferedforthreegeneralfieldsofapplication:
AR-P1210,AR-N2210foranevencoverageofverticaltrenchesAR-P1220,AR-N2220foretched54°slopes
AR-P1230,AR-N2230forplanarwafersurfaces
Incontrasttosprayresistsforhighlystructuredtopologies(AZ4999),thenewdevelopmentsAR-P1210andAR-N2210formevensurfaces,i.e.surfacesaresmoother.Duetothespecificsolventcomposition,evaporationisslower,butneverthelessacompleteandsufficientcoatingofthesubstrateisgiven.
Theresistscontainsolventmixtureswithmethylethylketoneand1-methoxy-2-propyl-acetate(safersol-vent)asmaincomponents.
2.Parameter
Properties/Resist
AR-P/N
1210
1220
1230
2210
2220
2230
Solidcontent
%
4
4
4
4
4
4
Viscosity(25°C)
mPa⋅s
0.5
0.6
1.3
0.5
0.6
1.3
Filmthicknesswithspraycoatingµm4-103-80.5-14-103-80.5-1
(stronglydevice-specific)
Flashpoint
°C
1
9
37
1
9
37
Filtration
µm
0.2
Storage
°C
10-18
Storageguaranteefromdate
month
6
ofsale
3.Processchemicals
Developer
AR
300-44
Remover
...
AR
300-70
pleaseturnover!
4.ProcessingofAR-P/N1210…2230
(1.)Aftertheresisthasbeenadaptedtothetemperatureofthepreferablyair-conditionedworkspace(optimalconditions20-25°Catarelativehumidityof30-50%),theresistsarefilledintothecartridgesofthespraycoaterunderyellowsafelight.TheusuallyoccurringgasformationintheresistsupplylineisnotobservedwithARresists.Theresististhenappliedviaspraycoating.
Thequalityofthecoatingdependslargelyupontherespectivespraycoatingdeviceused.Manuallyad-justableequipmentparameterssuchasdispenserate,scanningspeed,spraydistanceandchucktem-peraturehaveamajorinfluenceonthefilmformingprocess.Commerciallyavailablesprayingequip-mentsclearlydifferwithrespecttothecoatingproperties,andownexperimentsarethusabsolutelyrequiredinordertodetermineoptimalparameters.
ExemplaryparametersforAR-P1220andAR-N2220asdeterminedwithspraycoater“GammaAl-taspray“aresummarizedinthetablebelow:
Spraycoater
GammaAltaspray,SüssMicroTec
PositiveresistAR-P1220
NegativeresistAR-N2220
Resistflowspeed
25drops/min
40drops/min
Armspeed
75mm/s
90mm/s
N2-pressure
0.9bar
0.9bar
Exposure
NikonStepperB14,i-line,NA=0.65
NikonStepperB14,i-line,NA=0.65
Sensitivity(filmthickness)
200mJ/cm²(5µm)
70mJ/cm²(5µm)
DevelopmentwithAR300-44
4x60spuddle
4x60spuddle
Minimumresolution
1.2µm
1.4µm
temperatureofchuck:
82°C,nozzleheight:
20nm
WithresistsAR-P1210and1220aswellasAR-N2210and2210,filmthicknessvaluesof4-8µmcanbeobtainedunderstandardconditions.Higherfilmthicknessvaluescaneasilybegeneratedwithhigherdispenseratesorbymultiplecoatingsteps.IncomparisonwithAZ4999,theseresistshavealowertendencytoformdisturbingbeads.
Inordertoproducethinfilmsbetween0.5-1µm,resistsAR-P1230andAR-N2230arewellsuited,whichcanbeusedforspraycoatingandspincoatingapplicationsaswellasforresistdepositionbyspincoating.Filmthicknessvaluesachievedbyspincoatingareintherangeofapproximately50-120nm.
(2.)Ifthecoatingprocedureisperformedonheatedchucks,resistfilmsaresufficientlydriedupondepositionatatemperatureof70–80°C,andnofurtherbakestepisrequired.
Usingnon-heatedchuckshowever,coatedsubstratesshouldbebakedonahotplateat85-90°Cfor2-5minorinaconvectionovenat85°Cfor25mininordertoimproveadhesion.