PatentCrossLicenseAgreement专利交叉许可协议完整篇doc.docx

PatentCrossLicenseAgreement专利交叉许可协议完整篇doc.docx

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PatentCrossLicenseAgreement专利交叉许可协议完整篇doc

PatentCrossLicenseAgreement专利交叉许可协议-

WHEREAS,AAAandBBBeachownpatentsandpatentapplicationscoveringinventionspertinenttothedesignandmanufactureofflashmemoryandothersemiconductorproducts;and

WHEREAS,AAAandBBBarebothengagedintheirrespectivecontinuingprogramsofresearchanddevelopmentofflashmemoryrelatedtechnology,whichwillresultinnewdiscoveriesandinventionsmanyofwhichwillbecomethesubjectofnewpatentapplicationsandpatents;and

WHEREAS,AAAandBBBeachwanttorespectthetechnologycontributionsoftheotherandwanttoincreasetheirfreedomtodesignandmanufacturetheirownnewproductswithoutinfringingtherightsoftheotherunderanypatentorpatentapplicationownedorcontrolledbytheother;

NOW,THEREFORE,inconsiderationofthemutualcovenantsandpromisescontainedherein,thepartiesagreeasfollows:

*=Confidentialtreatementrequested.

1.DEFINITIONS.

1.1Subsidiaryshallmeananycorporation,companyorotherentitymorethanfiftypercent（50%）ofwhoseoutstandingsharesorstockentitledtovotefortheelectionofdirectors（otherthananysharesorstockwhosevotingrightsaresubjecttorestriction）isownedorcontrolledbyeitherAAAorBBB,directlyorindirectly.

1.2EffectiveDateshallbethedateonwhichthisAgreementisexecutedbyBBB.

1.3IntegratedCircuitProductsshallmeanaunitaryelectroniccircuit,theactivecircuitelementsofwhicharefabricatedofsiliconsemiconductivematerial,suchdevicebeingintheformofaseparatediscretedevice,orintegralwithasiliconwaferandseverabletherefrom.

FlashMemoryIntegratedCircuitshallmeananon-volatilememoryintegratedcircuitthatiselectricallyprogrammableandelectricallyerasable,andconsistsof

（1）flashmemorycells,eachofwhichhasafloatinggateandutilizesnomorethantwodifferentfloatinggatechargelevelsrepresentingnomorethanonebitofinformation,and

（2）anyon-chipcontrol,I/O,andothersupportcircuitrynecessarytotheoperationofthememoryintegratedcircuit,inbothwaferandchipform.

1.4MLCFlashMemoryIntegratedCircuitshallmeananon-volatilememoryintegratedcircuitthatiselectricallyprogrammableandelectricallyerasable,andconsistsof

（1）flashmemorycells,eachofwhichhasafloatinggateandutilizesatleastthreedifferentfloatinggatechargelevelsrepresentingmorethanonebitofinformation,and

（2）anyon-chipcontrol,I/O,andothersupportcircuitrynecessarytotheoperationofthememoryintegratedcircuit,inbothwaferandchipform.

1.5FlashMemoryDeviceshallmeanamemorydevicewhichconsistsofoneormoreFlashMemoryIntegratedCircuitswiththehousing/packagingandanysupportingmeanstherefor.

1.6MLCFlashMemoryDeviceshallmeanamemorydevicewhichconsistsofoneormoreMLCFlashMemoryIntegratedCircuitswiththehousing/packagingandanysupportingmeanstherefor.

1.7

a.FlashMemorySystemshallmeananintegratedcircuitmemorysystem（includinghardwareand/orsoftware）,whichcontains（i）oneormoreinterconnectedFlashMemoryDevicesorFlashMemoryIntegratedCircuits,（ii）in-systemcontrol,I/Oandothersupportcircuit（s）thatare（a）interconnectedwiththeFlashMemoryDevicesorFlashMemoryIntegratedCircuits,and（b）necessarytotheoperationofthememorysystem,withorwithoutthehousing/packagingandsupportingmeanstherefor.

b.MLCFlashMemorySystemshallmeananintegratedcircuitmemorysystem（includinghardwareand/orsoftware）,whichcontains（i）oneormoreinterconnectedMLCFlashMemoryDevicesorMLCFlashMemoryIntegratedCircuits,（ii）in-systemcontrol,I/Oandothersupportcircuit（s）thatare（a）interconnectedwiththeMLCFlashMemoryDevicesorMLCFlashMemoryIntegratedCircuits,and（b）necessarytotheoperationofthememorysystem,withorwithoutthehousing/packagingandsupportingmeanstherefor.

1.8Triple-polyFlashMemoryDeviceshallmeaneitheraFlashMemoryDeviceoraMLCFlashMemoryDeviceinwhichtheFlashMemoryIntegratedCircuit（s）ortheMLCFlashMemoryIntegratedCircuit（s）,asthecasemaybe,utilizespoly-to-polyeraseandismanufacturedonasemiconductorfabricationprocesswhichutilizesthreelayersofpolysilicon.

a.Triple-PolyFlashMemoryProductshallmeaneitheraTriple-polyFlashMemoryDevice,aFlashMemorySystem,oraMLCFlashMemorySysteminwhichTriple-polyFlashMemoryDevicesareincluded.

b.EtoxFlashProductshallmean

（1）aFlashMemoryDeviceoraMLCFlashMemoryDevicewhichutilizespolytosource/substrateeraseorprogram;or

（2）aFlashMemorySystemorMLCFlashMemorySysteminwhichallFlashMemoryDevicesand/orMLCFlashMemoryDevicesutilizepolytosource/substrateeraseorprogram.

1.9ThirdPartyFlashSoftwareshallmeansoftware（ineithersourcecodeorobjectcodeform）

（1）whichisusedprimarilytosupportorenhancetheoperationsofFlashMemoryDevices,MLCFlashMemoryDevices,FlashMemorySystems,orMLCFlashMemorySystems,

（2）whichisnotcreatedorauthoredbyemployee（s）ofBBBorBBB’sSubsidiariesorofSanDiskorofAAA’sSubsidiaries,and（3）thecopyrightownershipofwhichdoesnotlieinBBBorBBB’sSubsidiariesorAAAorAAA’sSubsidiaries.

FlashBusinessshallmeanthoseunits,entitiesandassetswithinacompanywhoseprimaryactivityorusageistodesign,manufacture,orsellFlashMemoryDevices,MLCFlashMemoryDevices,FlashMemorySystems,orMLCFlashMemorySystems.

1.10AAAPatentsshallmeanallclassesortypesofpatents,utilitymodelsanddesignpatents（including,withoutlimitation,originalsordivisions,continuations,continuations-in-partorreissues）,inallcountriesorjurisdictionsoftheworldnowownedorcontrolledbyAAAoracquiredbyAAAduringthetermofthisAgreementwhich（a）areissuedpriortotheexpirationorterminationofthisAgreement,and（b）exceptforconsiderationpaidtoemployees,havenorequirementtopayconsiderationtoanotherforthegrantofalicenseunderthisAgreement,and（c）applytotheuseormanufactureofFlashMemoryIntegratedCircuits,FlashMemoryDevicesorFlashMemorySystems.

1.11BBBPatentsshallmeanallclassesortypesofpatents,utilitymodelsanddesignpatents（including,withoutlimitation,originalsordivisions,continuations,continuations-in-partorreissues）,inallcountriesorjurisdictionsoftheworldnowownedorcontrolledbyBBBoracquiredbyBBBduringthetermofthisAgreementwhich（a）areissuedpriortotheexpirationorterminationofthisAgreement,（b）exceptforconsiderationpaidtoemployees,havenorequirementtopayconsiderationtoanotherforthegrantofalicenseunderthisAgreement,and（c）applytotheuseormanufactureofFlashMemoryIntegratedCircuits,FlashMemoryDevicesorFlashMemorySystems.

1.12AAALicensedProductsshallmeananyAAAFlashMemoryIntegratedCircuits,AAAFlashMemoryDevices,AAAFlashmemorySystems,andThirdPartyFlashSoftwaredistributedorsoldbyAAAinconjunctionwithaAAALicensedProduct,andshallnotincludeanyMLCFlashMemoryIntegratedCircuits,MLCFlashMemoryDevices,orMLCFlashMemorySystems.

1.13BBBLicensedProductsshallmeananyBBBFlashMemoryIntegratedCircuits,BBBFlashMemoryDevicesandBBBFlashMemorySystems;andThirdPartyFlashSoftwarewheresuchThirdPartyFlashSoftwareisdistributedorsoldbyBBBinconjunctionwithaShapLicensedProduct,andshallnotincludeanyTriple-PolyFlashmemoryDeviceorProduct,MLCFlashMemoryIntegratedCircuits,MLCFlashMemoryDevicesorMLCFlashMemorySystems.

1.14NetSalesshallmeanthefollowing:

a.NetSaleswithrespecttoanyBBBLicensedProductswhicharefirstsoldintheformofFlashMemoryDevicesorFlashMemoryIntegratedCircuitsasindividualitemsshallmeantheinvoicepriceforsaidMemoryDevicesorFlashMemoryIntegratedCircuitsbilledbytheICGroupofBBBand/orSubsidiariesofBBB;exceptthat,wheresuchsalesaretoanotherBBBsubsidiary,divisionorgroup,thenNetSalesshallmeanthehigheroftheinvoicepricebilled,orthethencurrentaveragesellingprice（ASP）forsuchproductstothirdpartycustomersofBBB.

b.NetSaleswithrespecttoanyBBBLicensedProductswhicharefirstsoldintheformofFlashMemorySystemsshallmeanthetotalinvoicepriceofallFlashMemoryDevicesorFlashMemoryIntegratedCircuitsusedinsuchFlashMemorySystemswhensoldasindividualitemsbytheICGroupofBBBoritsSubsidiariestothirdpartycustomersofBBB,orwhentherearenocomparablesalesofthesameFlashMemoryDevicesorFlashMemoryIntegratedCircuitsasindividualitems,NetSalesshallmeantheinvoicepriceforequivalentFlashMemoryDevicesorFlashMemoryIntegratedCircuitssoldasindividualitemsbytheICGroupofBBBorSubsidiariesofBBBtothirdpartycustomersofBBB.IncasetherearenoequivalentFlashMemoryDevicesorFlashMemoryIntegratedCircuitsbyreasonofthefactthattheFlashMemorySystemincludesonlyFlashMemoryDevicesorFlashMemoryIntegratedCircuitswithatotalcapacityoflessthanthecapacityofthelowestcapacityFlashMemoryIntegratedCircuitorFlashMemoryDevicethenbeingsoldbyBBB,NetSalesofsuchFlashMemorySystemsshallbecalculatedbymultiplyingtheinvoicepriceofthelowestcapacityFlashMemoryIntegratedCircuitorFlashMemoryDevice,whicheverislower,thenbeingsoldtothirdpartycustomersofBBB,bythefractionA/B,whereAisthecapacityoftheFlashMemoryDevicesorFlashMemoryIntegratedCircuitsincludedintheFlashMemorySystem,andBisthecapacityofthelowestcapacityF