Method and apparatus for generating highly dense uniform plasma in a high frequency electric fieldWord格式.docx
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andathirdstepofapplying,totheplasmageneratingpart,amagneticfieldsubstantiallyatarightangletotheworkingplaneofthehighfrequencyrotatingelectricfield,therebytoconvertthetranslationalmovementoftheelectronsintheplasmageneratingpartintorevolvingmotionsunderoscillatingorrotatingmotionsbywhichtheelectronsrevolveintheplasmageneratingpart.Thehighfrequencyrotatingelectricfieldandthemagneticfieldcausetheelectronsintheplasmageneratingparttobeconfinedtherein.
Claims
Whatisclaimedis:
1.Aplasmageneratingmethodcomprising:
afirststepofdisposingthreeofmorelateralelectrodesatlateralsidesofaplasmageneratingpartinavacuumchamber;
asecondstepofrespectivelyapplying,tosaidlateralelectrodes,highfrequencyelectricpowersofwhichfrequenciesarethesameasoneanotherandofwhichphasesaredifferentfromoneanother,therebytoexcite,insaidplasmageneratingpart,ahighfrequencyrotatingelectricfieldtocauseelectronsundertranslationalmotionsinsaidplasmageneratingparttopresentrotatingmotionswithtranslationalmovementcomponent;
and
athirdstepofapplying,tosaidplasmageneratingpart,amagneticfieldsubstantiallyatarightangletotheworkingplaneofsaidhighfrequencyrotatingelectricfield,therebytoconvertsaidtranslationalmovementofsaidelectronsunderrotatingmotionsinsaidplasmageneratingpartintorevolvingmovementbywhichsaidelectronsrevolveinsaidplasmageneratingpart;
saidelectronsinsaidplasmageneratingpartbeingconfinedtherein.
2.Aplasmageneratingmethodaccordingtoclaim1,wherein
thethirdstepcomprisesastepofapplying,tosaidplasmageneratingpart,amagneticfieldsubstantiallyatarightangletotheworkingplaneofsaidhighfrequencyrotatingelectricfield,therebytoconvertsaidtranslationalmovementofsaidelectronsunderrotatingmotionsinsaidplasmageneratingpartintorevolvingmovementbywhichsaidelectronsrevolveinsaidplasmageneratingpartinadirectionidenticalwithorreversetothedirectionofsaidrotationalmotions.
3.Aplasmageneratingmethodaccordingtoclaim1,whereinthemagneticfieldatthethirdstepissteadywiththepassageoftime.
4.Aplasmageneratingmethodaccordingtoclaim1,whereinthemagneticfieldatthethirdstepisunsteadywiththepassageoftime.
5.Aplasmageneratingmethodaccordingtoclaim1,whereinthehighfrequencyelectricpowersatthesecondsteparegreaterthan1MHz,andtheabsolutevalueoftheintensityofthemagneticfieldatthethirdstepisgreaterthan2G.
6.Aplasmageneratingmethodaccordingtoclaim1,whereinthefollowingrelationshipisestablishedamongthefrequencyf(MHz)ofthehighfrequencyelectricpowersatthesecondstep,theintensityE(V/cm)oftherotationalelectricfieldexcitedbysaidhighfrequencyelectricpowersandtheabsolutevalueB(G)oftheintensityofthemagneticfieldatthethirdstep:
1<
E/Bf<
50
7.Aplasmageneratingmethodaccordingtoclaim1,whereintheintensityofthemagneticfieldatthethirdstepisgreaterattheperipheryoftheplasmageneratingpartthanatthecenterthereof.
8.Aplasmageneratingmethodaccordingtoclaim1,whereinthewallofthevacuumchamberismadeofanonmagneticmaterial.
9.Aplasmageneratingmethodaccordingtoclaim1,whereinthewallofthevacuumchamberismagneticallyshielded.
10.Aplasmageneratingapparatuscomprising:
threeormorelateralelectrodesdisposedatlateralsidesofaplasmageneratingpartinavacuumchamber;
highfrequencyelectricpowerapplyingmeansforapplying,tosaidlateralelectrodes,respectivehighfrequencyelectricpowersofwhichfrequenciesarethesameasoneanotherandofwhichphasesaredifferentfromoneanother,therebytoexcite,insaidplasmageneratingpart,ahighfrequencyrotatingelectricfieldtocauseelectronsundertranslationalmotionsinsaidplasmageneratingparttopresentrotatingmotions;
magneticfieldapplyingmeansforapplyingamagneticfieldsubstantiallyatarightangletotheworkingplaneofsaidhighfrequencyrotatingelectricfield,therebytoconvertsaidtranslationalmovementofsaidelectronsunderrotatingmotionsinsaidplasmageneratingpartintorevolvingmovementbywhichsaidelectronsrevolveinsaidplasmageneratingpartsuchthatsaidelectronsinsaidplasmageneratingpartareconfinedtherein.
11.Aplasmageneratingapparatusaccordingtoclaim10,furthercomprising:
asamplestagedisposedatalowerpartoftheplasmageneratingpartinsideofthevacuumchamber;
anoppositeelectrodedisposedatanupperpartofsaidplasmageneratingpartinsideofsaidvacuumchamber.
12.Aplasmageneratingapparatusaccordingtoclaim11,whereinabiasvoltageisappliedtothesamplestageforirradiatingaplasmatoasampletobeplacedonsaidsamplestage.
13.Aplasmageneratingapparatusaccordingtoclaim11,furthercomprisingtemperaturecontrolmeansforcontrollingthetemperatureofthesamplestagesuchthataplasmaisirradiatedtoasampletobeplacedonsaidsamplestage.
14.Aplasmageneratingapparatusaccordingtoclaim10,whereinthemagneticfieldapplyingmeanshasapairofupperandlowercoilssodisposedastobeverticallyoppositetoeachother,andpowersuppliesforrespectivelyapplyingelectriccurrentstosaidpairofcoils.
15.Aplasmageneratingapparatusaccordingtoclaim14,whereinthepowersupplieshavemeansforapplying,tothepairofcoils,electriccurrentswhicharesteadywiththepassageoftime.
16.Aplasmageneratingapparatusaccordingtoclaim14,whereinthepowersupplieshavemeansforapplying,tothepairofcoils,electriccurrentswhichareunsteadywiththepassageoftime.
17.Aplasmageneratingapparatusaccordingtoclaim10,whereinthethreeormorelateralelectrodesandthemagneticfieldapplyingmeansaredisposedoutsideofthevacuumchamber.
18.Aplasmageneratingapparatusaccordingtoclaim10,whereinmembersmadeofquartzorceramicsaredisposedbetweentheplasmageneratingpartandeachofthelateralelectrodes,andbetweensaidplasmageneratingpartandthemagneticfieldapplyingmeans.
19.Aplasmageneratingapparatusaccordingtoclaim10,whereinthehighfrequencyelectricpowerapplyingmeanshasphaselockingmeansarrangedsuchthatthedifferencesinphaseamongthehighfrequencyelectricpowersrespectivelyappliedtothelateralelectrodesarethesameaseachother.
20.Aplasmageneratingapparatusaccordingtoclaim10,whereinthehighfrequencyelectricpowerapplyingmeanshasmeansforrespectivelyapplying,tothelateralelectrodes,threeormorehighfrequencyelectricpowerswhicharesuppliedfromthesamepowersupplyandofwhichphasesaredifferentfromoneanother.
21.Aplasmageneratingapparatusaccordingtoclaim10,whereinthewallofthevacuumchamberismadeofanonmagneticmaterial.
22.Aplasmageneratingapparatusaccordingtoclaim10,whereinthewallofthevacuumchamberismagneticallyshielded
Description
BACKGROUNDOFTHEINVENTION
Thepresentinventionrelatestoaplasmageneratingmethodandaplasmageneratingapparatususingthesame.
Aplasmageneratingmethodusinghighfrequencyelectricdischargeisusedinthefieldsofdry-etchingapparatusformicrofabrication,plasmaCVDapparatusorsputteringapparatusforformingthinfilms,ionimplantationapparatusandthelike.Insuchaplasmageneratingmethod,itisrequiredtogenerateaplasmaunderahighvacuuminordertominiaturizethefeaturesizesortocontrolthefilmqualitywithhighprecision.
Thefollowingwilldiscussadryetchingmethodformicrofabricationasanexampleofapplicationoftheplasmageneratingmethod.
TherecentprogressinthefieldofhighlydensesemiconductorintegratedcircuitsisbringingaboutgreatchangesequivalenttothosebroughtbytheIndustrialRevolution.Thehighlydensearrangementofasemiconductorintegratedcircuithasbeenachievedbyminiaturizationofelementdimensions,improvementsindevices,provisionoflarge-areachipsandthelike.Elementdimensionsarenowminiaturizedtotheextentofthewavelengthoflight.Inlithography,theuseoflaserorsoftX-rayistakenintoconsideration.Torealizemicro-patterns,dryetchingplaysanimportantroleaslithographydoes.
Dryetchingisaprocesstechnologyforremovingunnecessarypartsofathinfilmorasubstratewiththeuseofchemicalorphysicalreactionsonthesurfaceofagas-solidphaseofradicals,ionsorthelikepresentinaplasma.Asdryetching,thereismostwidelyusedareactiveionetching(RIE),accordingtowhichasampleisexposedtoahigh-frequencydischargeplasmaofasuitablegas,sothatanetchingreactionisgeneratedonthesamplesurfacetoremoveunnecessarypartsthereof.Generally,thenecessarypartsorpartsnottoberemovedofthesamplesurface,are