半导体PVD金属化0912144305.docx

半导体PVD金属化0912144305.docx

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半导体PVD金属化0912144305

Metalization

—PVD

2014.08.18

macroscopic

microscopic

THIN

FILM

Materialtodeposit

A16H

・「

SUBSTRATE

WHATISSPUTTERING?

Incidention（Ar）

■Definition:

Todislodge（atoms）fromthesurfaceofmaterialsbycollisionwithhighenergyparticles;also,todepositbysuchafilm.（accordingtoWebster'sdictionary）

Ar

Ar

MagnetronSputtering

•StrongmagnetisplacedunderthematerialstobedepositedthusproduceamagneticfieldinadditiontotheDCelectricalfield;

•UndertheLorentzforce,Hoppingelectrosistrappedneartothetargetthusenhancedtheionizationefficiency.

•Advantage:

一highdepositionrate~l（xm/minforAl,（10timeshigher）

一reducingelectronbombardmentofSub・

一extendingtheoperatingvacuumrange

-sputteringmetallictargetinthepresenceofareactivegas-eq）,mixedw汁hingas（Ar）

roxides-AI2O3/SiO2/Ta2O5（O2）

nitrides-TaNzTiNzSi3N4（N2/NH3）

Icarbides-V\C,WC,SiC（CH4/C2H4/C3H8）

Q?

）WHnsswadW山ISAS

REACTIVEGASFLOW（Qr）

曼JLTOAUJOO工JLVO

A:

compounds

B:

doping,alloys

A:

allN2reactswithTafilmTdopedmetal（e.g.TaN001）->atomicratioofNtoTaincreasesasN2pressureincrease

B:

Compoundformationanthetarget,plasmaimpedaneeiseffectivelylowerinstateBthaninstat?

A,sinc已ion・inducedsecondaryelectronemissionismuchhigherforcompoundsthanformetals.

SputterYield

4MME{的+M2）Eh

（Q<1KeV）

S”（E）

Eb

（£）>1KeV）

Mi+M-

Ejected_Atoms（jnolecules）

Incidention

S:

typically0.01^4;

Periodicallychangewithatomicmassandradius;

AccordingtothecollisioncascadetheorybySigmund

3.56a

S—

1

*a:

ameasureoftheefficiencyofmomentumtransferincollisionSn（E）:

stoppingpower

-ameasureoftheenergylossperunitlengthduetonuclearcollision

（uo_至oss

Target:

•GrainSize

•CrystallographicOrientation

•2ndPhaseStructure

•MagneticPermeability

•Temperature

•InelusionDensity

•Density

•Deflection

•SecondaryElectronYield

•SputteringYield

•ErosionTrack

uoEedcs

04e4=sqns丄①

SputteringSource:

•ErosionTrack

•MagneticFieldStrength

•MagnetMotion

•CoolingEfficiency

•Stiffness

BackingPlate:

•Stiffness

•ThermalConductivity

•ElectricalConductivity

•CorrosionResistance

Transport:

•GasPressure

•GasPurity

•T-SDistance

Substrate:

•Temperature

•Bias

•Cleanliness

Whatwecareaboutthesputtering?

Keyindexoffilm

Recipe/equipmentparameters

Resistivity

Pressure

ResistivityNU

Vacuum;

ThicknessNU

Wemusttobuildabridge

Heatertemp,Sub.gasflow;

Particles

here!

Power

Etchingcapabilities

<>

Coolingrate;

Miero・structure

7lx

Target・subspacing

Stress

Targetgrainsize/purity;

Reflectivity

2ndphase/textureoftarget

Stoichiometry

Targetlifetime

Stepcoverage

Shield/magnet/partsassembly

Morphology

Thermalconductivity

Etc.

Etc.

Howwebuiltthisbridge?

•Resistivity―

Sub.temp.,filmthickness,filmcrystallographicstructure,Vacuum,pressure,power

•ResistivityNU—

Sub.temp.,filmthickn^ss,filmcrystallographicstructure,Vacuum,pressure,power,spacing

•ThicknessNU—

pressure,spacing,targetlifetime,power,Crystallographic,targetgrainsize

•Particles—

Shieldassembly,target/flakearcing,seasoning,targetdeposit!

ontargetgrainsize,partslifetime

•Etchingcapabilities—Sub.temp.,coolingefficiencyoftarget,vacuum,pressure,

target2ndphase,targetlifetime

•Miero・structure

—Sub.temp./condition,vacuum,pressure,power,target2ndphase,targetlifetime,coolingrate

•Stress・・•Reflectivity・・•Stoichiometry・・•Stepcoverage

・Morphology—

Sub.temp./condition,vacuum,pressure

Sub.temp./condition,vacuum,pressure,power,target2ndphase,

Sub.temp./condition,vacuum,pressure,power,targetlifetimemachin?

design,pressure,power,Sub・Temp

Sub.temp.,Sub・condition,vacuum,pressure,power,target

2ndphase,targetlifetime,coolingrate

Recrystallizedgrainstructure

250C

51OC

2

~5mT

Columnargrainsextendingthroughcoatingthickness

ArgonPressure（mTorr）

TransitionStructureconsistingofdenselypackedfibrousgrains

125CTemperature

（W

6

340C

PorousStructureconsistingoftaperedcrystallitesseparatedbyvoids

Substratetempandargonpressureisthekeytodeterminethefinalmicrostructureoffilm.

ForAICu（600Cismeltingpoint）:

250C~0.6Tm;340C~0.7Tm;

ZoneTissmallforAl;

Similarchartexistsforthedependencebetweenbiaspowerandpressure（Temp）.

TihasitsownMDchart

250C

~3mT

PorousStructureconsistingoftaperedcrystallitesseparatedbyvoids

TransitionStructureconsistingofdenselypackedfibrousgrains

Columnargrainsextendingthroughcoatingthickness

SubstrateTemperature（W

Recrystallizedgrainstructure

20

ArgonPressure（mTorr）

MDchart—Ti

•Substratetempan