IC制程专业词汇.docx

1、IC制程专业词汇頁次英文名稱中文名稱1Active Area主動區（工作區）2ACETONE丙酮3ADI-After Develop Inspection顯影後檢查4AEI-After Etch Inspection蝕刻後檢查5AIR SHOWER空氣洗塵室6ALIGNMENT對準7ALLOY/SINTER熔合8AL/SI鋁/矽 靶9AL/SI/CU鋁/矽/銅10ALUMINUN鋁11ANGLE LAPPING角度研磨12ANGSTROm埃13APCVD（ATMOSPRESSURE）常壓化學氣相沈積14AS75砷15ASHING，STRIPPING電漿光阻去除16ASSEMBLY晶粒封裝17B

2、ACK GRINDING晶背研磨18BAKE, SOFT BAKE, HARD BAKE烘烤，軟烤，預烤19BF2二氟化硼20BOAT晶舟21B.O.E緩衝蝕刻液22BONDING PAD銲墊23BORON硼24BPSG含硼及磷的矽化物25BREAKDOWN VOLTAGE崩潰電壓26BURN IN預燒試驗27CAD電腦輔助設計28CD MEASUREMENT微距測試29CH3COOH醋酸30CHAMBER真空室,反應室31CHANNEL通道32CHIP ,DIE晶粒33CLT（CARRIER LIFE TIME）截子生命週期34CMOS互補式金氧半導體35COATING光阻覆蓋36CROSS

3、 SECTION橫截面37C-V PLOT電容,電壓圓38CWQC全公司品質管制39CYCLE TIME生產週期時間40CYCLE TIME生產週期時間41DEFECT DENSITY缺點密度42DEHYDRATION BAKE dehydration bake去水烘烤43DENSIFY密化44DESCUM電漿預處理45DESIGN RULE設計規範46EDSIGN RULE設計準則47DIE BY DIE ALIGNMENT每FIELD均對準48DIFFUSION擴散49DI WATER去離子水50DOPING參入雜質51DRAM , SRAM動態,靜態隨機存取記憶體52DRIVE IN驅入

4、53E-BEAM LITHOGRAPHY電子束微影技術54EFR（EARLY FAILURE RATE）早期故障率55ELECTROMIGRATION電子遷移56ELECTRON/HOLE電子/ 電洞57ELLIPSOMETER橢圓測厚儀58EM（ELECTRO MIGRATION TEST）電子遷移可靠度測試59END POINT DETECTOR終點偵測器60ENERGY能量61EPI WAFER磊晶晶片62EPROM (ERASABLE-PROGRAMMABLE ROM）電子可程式唯讀記憶體63ESDELECTROSTATIC DAMAGEELECTROSTATIC DISCHARGE靜

5、電破壞靜電放電64ETCH蝕刻65EXPOSURE曝光66FABRICATION（FAB）製造67FBFC（FULL BIT FUNCTION CHIP）全功能晶片68FIELD/MOAT場區69FILTRATION過濾70FIT（FAILURE IN TIME）71FOUNDRY客戶委託加工72FOUR POINT PROBE四點偵測73F/S（FINESONIC CLEAN）超音波清洗74FTIR傅氏轉換紅外線光譜分析儀75FTY（FINAL TEST YIELD）76FUKE DEFECT77GATE OXIDE閘極氧化層78GATE VALVE閘閥79GEC（GOOD ELECTRIC

6、AL CHIP）優良電器特性晶片80GETTERING吸附81G-LINEG-光線82GLOBAL ALIGNMENT整片性對準與計算83GOI（GATE OXIDE INTEGRITY）閘極氧化層完整性84GRAIN SIZE顆粒大小85GRR STUDY (GAUGE REPEATABILITyAND REPRODUUCIBILITY）測量儀器重複性與再現性之研究86H2SO4硫酸87H3PO4磷酸88HCL氯化氫（鹽酸）89HEPA高效率過濾器90HILLOCK凸起物91HMDSHMDS蒸鍍92HNO3硝酸93HOT ELECTRON EFFECT熱電子效應94I-LINE STEPPE

7、RI-LINE步進對準曝光機95IMPURITY雜質96INTEGRATED CIRCUIT（IC）積體電路97ION IMPLANTER離子植入機98ION IMPLANTATION離子植入99ISOTROPIC ETCHING等向性蝕刻100ITY（INTEGRATED TEST YIELD）综合测试良率101LATCH UP栓鎖效應102LAYOUT佈局103LOAD LOCK傳送室104LOT NUMBER批號105LPCVD（LOW PRESSURE）低壓化學氣相沈積106LP SINTER低壓燒結107LPY（LASER PROBE YIELD）雷射修補前測試良率108MASK光罩

8、109MICRO,MICROMETER,MICRON微，微米110MIS ALIGN對準不良111MOS金氧半導體112MPY（MULTI PROBE YIELD）多功能偵測良率113MTBF（MEAN TIME BETWEEN FAILURE）平均失效时间114N2,NITROGEN氮氣115N,P TYPE SEMICONDUCTORN,P型半導體116NSG（NONDOPED SILICATE GLASS）無參入雜質矽酸鹽玻璃117NUMERICAL APERTURE（N.A.）數值孔徑118OEB（OXIDE ETCH BACK ）氧化層平坦化蝕刻119OHMIC CONTACT歐姆接

9、觸120ONO（OXIDE NITRIDE OXIDE）氧化層-氮化層-氧化層121OPL（OP LIFE）（OPERATION LIFE TEST）使用期限（壽命）122OXYGEN氧氣123P31磷124PARTICLE CONTAMINATION塵粒污染125PARTICLE COUNTER塵粒計數器126PASSIVATION OXIDE（P/O）護層127P/D（PARTICLE DEFECT）塵粒缺陷128PECVD電漿CVD129PELLICLE光罩護膜130PELLICLE光罩保護膜131PH3氫化磷132PHOTORESIST光阻133PILOT WAFER試作晶片134PI

10、NHOLE針孔135PIRANHA CLEAN過氧硫酸清洗136PIX聚醯胺膜137PLASMA ETCHING電將蝕刻138PM（PREVENTIVE MAINTENANCE）定期保養139POCL3三氯氧化磷140POLY SILICON複晶矽141POX聚醯胺膜含光罩功能142PREHEAT預熱143PRESSURE壓力144REACTIVE ION ETCHING（R.I.E.）活性離子蝕刻145RECIPE程式146REFLOW回流147REGISTRATION ERROR註記差148RELIABILITY可靠性149REPEAT DEFECT重複性缺點150RESISTIVITY阻

11、值151RESOLUTION解析力152RETICLE光罩153REWORK/SCRAP/WAIVE修改 /報廢/簽過154RUN IN/OUT擠進/擠出155SCRUBBER刷洗機156SAD（SOFTWARE DEFECT ANALYSIS）缺陷分析軟體157SEM（SCANNING ELECTRON MICROSCOPE）電子顯微鏡158SELECTIVITY選擇性159SILICIDE矽化物160SALICIDE金屬矽化物161SILICON矽162SILICON NITRIDE氯化矽163SMS(SEMICODUCTOR MANUFACTURING SYSTEMS）半導體製造系統16

12、4SOFT WARE, HARD WARE軟體 ,硬體165S.O.G.（SPIN ON GLASS）旋製氧化矽166S.O.J.(SMALL OUTLINE J-LEAD PACKAGE）縮小型J形腳包裝IC167SOLVENT溶劑168SPECIFICATION（SPEC）規範169SPICE PARAMETERSPIC參數170S.R.A(SPREADING RESISTENCE ANALYSIS）展佈電阻分析171SPUTTERING濺鍍172SSER（SYSTEM SOFT ERROR RATE TEST）系統暫時性失效比率測試173STEP COVERAGE階梯覆蓋174STEPP

13、ER步進式對準機175SURFACE STATUS表面狀態176SWR（SPECIAL WORK REQUEST）177TARGET靶178TDDB（TIME DEPENDENT DIELECTRIC BREAKDOWN）介電質層崩溃的時間依存性179TECN（TEMPORARY ENGINEERING CHANGE NOTICE）臨時性製程變更通知180TEOS（TETRAETHYLOR THOSILICATE）四乙基氧化矽/正硅酸乙脂181THRESHOLD VOLTAGE臨界電壓182THROUGH PUT產量183TMP（TI MEMORY PROTOTYPE，TMS-X TI MEM

14、ORY STANDARD PRODUCT）TI 記憶產品樣品（原型），TI記憶體標準產品184TOX氧化層厚度185TROUBLE SHOOTING故障排除186UNDERCUT底切度187UNIFORMITY均勻度188VACUUM真空189VACUUM PUMP真空幫浦190VERNIER遊標尺191VIA CONTACT連接窗/接触孔192VISCOSITY/stickness黏度193VLF（VERTICAL LAMINAR FLOW）垂直流層194WELL/TANK井區195WLRC(WAFER LEVEL RELIABILITY CONTROL）晶圓層次（廠內）可靠度控制196WL

15、QC（WAFER LEVEL QUALITY CONTROL ）晶圓層次（廠內）品質控制197X-RAY LITHOGRAPHYX光微影技術198YELLOW ROOM黃光室1.Vt could drops or climbs as gate length shrinks Short Channel Effect or Reverse Short Channel Effect.2Vt could drops or climbs as AA width shrinks Narrow width Effect or Reverse Narrow Width Effect.3Channel prof

16、ile determines SCE and RSCE.4Isolation structure and channel profile determines NWE and RNWE.LOCOSSTIASIC: 专用集成电路 application specific ICW/S:width/space STI: shallow slot isolationSlurry泥浆, 浆Pad 衬垫RTI 实时检测SC specially characteristic 关键属性Numerical Aperture（N.A.） 數值孔徑LDD: low dose drain 轻掺杂漏极: to supp

17、eress the SCEATPG:auto test pattern generatorADI: After Developing InspectionDIBL (Drain Induced Barrier Lowering)GIDL(gate induced drain leakage)PSM phase-shift mask 相移掩膜技术SC1 standard clean 1SC2 standard clean 2FEOL front-end of lineBEOL back-end of lineDIBL: drain induced barrier lowerGIDL: drain

18、 induced drain leakageSCE: short channel effectSAC oxide: sacrifice oxide DARC: dielectric anti-reflective coating 无机物; barc & tarc bottom and top 有机物SDE:source/drain-extensionRCA : SC1 + SC2Caro:3号液：PRRM: PhotoResist ReMoveEKC : EKC 270T (solvent name)APM，SPM，HPM的主要成分，除何种杂质；HF的作用。APM NH4OH:H2O2:H2O

19、=1:1:5 SC1主要去除微颗粒，可除部分金属离子。HPM HCL:H2O2:H2O=1:1:6 SC2主要作用是去除金属离子。SPM H2SO4:H2O2=4:1主要作用是去除有机物（主要是残留光刻胶）。HF的主要作用是去除OX。TSN:thin SiNDNW:deep N-wellAspect ratio:深宽比、高宽比ARDE:aspect ratio depend etchASIC:专用集成电路application specific ICSTR:speciall Test RequestEDM:equipment down managementPeeling:剥皮SSRW: Sup

20、er Steep Retrograde Well VCE: vacuum cassette elevatorCWF: customor wafer formERB:BKSP:backside pressure PNL:pulse nucleation layerSWR:specially work requestVOC: volatile organic chemistryECP: electric chemical plantingPRB Fail:串并联转换FIB:Focus ion beamPECS:precise etch & coating systemOTP: one time p

21、rogramASI:after strip inspectionDOE:design of experimentFEM:focus energy matrixRS/RC: sheet resistance / contact resistance EBR:ESC:electrostatic chuck 静电吸盘SOP:standard operation programDBR:OPC:optical proximity correctionsheath:外壳，鞘EAR: engineering abnormal reportEAP: engineering automatic programM

22、STR: MASS speciall technology requestCTM: customerArcing: 静电放电过程造成的灼伤，比如sputterings plasmaDRB: Disposition review boardDCVD: Dielectric CVDTEG: test element groupTec: thermal expansion coefficientTTF:total lifeFN: FN injection:Spking :由于al和si的互溶性造成的al在si 中扩散导致的穿刺现象SOF:stop on wafer:when one bin fail

23、 come out, test stops;COF:continue on wafer: when one bin fail comes out, test continue for other test items.Qual:abrrviation of qualificationConer lot: the curve IdsatN vs.IdsatP and form a window in it the lot can be run safe.PRBS:Pseudo Random Binary SequenceZERO mark :35D3H2L2 350A , Deepth 3 um

24、,hump 2um, hole diameter 2 umOAI (Off-Axis Illuminator):Definition: A kind of special illumination mode to improve process performance (DoF). In general,there are 3 kinds : small ,Quadruple,Annular This technology is very useful and easy to use,but bad throughput(30% Intensity decreaseP.E.B: Post Ex

25、posure Bake = I-line : Reduce Standing Wave effect = DUV : Diffuse Photo Acid(Core process) Root cause of Standing Wave(I-line) = Different concentration of dissolved PAC because of light wave PEB temperature of DUV decide CD and its profile :It depends on resist Need to evaluate optimum Temp: Below

26、 PAC dissolution Temp (130C ) I-line(110C 120C),DUV(110C 130C) are optimum Temp. OPC: optical proximity correlationDOF: Depth Of FocusIMP:Ion Metal PlasmaGallon:加仑 英：4.546 美3.785 升 (liter)SIP: Self-Ionized Plasma F/O: fab out = through putDarkfield detection 暗场检测Descum 扫底膜Diborane B2H6 乙硼烷Dichlorosi

27、lane/dichloride/silane H2SiCl2 二氯甲硅烷/二氯化物/硅烷Discrete 分离元器件Dishing 凹陷ECR: electron cyclotron resonance Enhancement mode/depletion mode 增强型/耗尽型FLIP: Floating Indeved Point Arithmetic 变址浮点运算FLOP: FLoating Octal Point 浮点八进制D FLIP-FLOP D触发器頁次英文名稱中文名稱解析1Active Area主動區（工作區）主動電晶體（ACTIVE TRANSISTOR）被製造的區域即所謂

28、的主動區（ACTIVE AREA）。在標準之MOS製造過程中ACTIVE AREA是由一層氮化矽光罩即等接氮化矽蝕刻之後的局部場區氧化所形成的，而由於利用到局部場氧化之步驟，所以ACTIVE AREA會受到鳥嘴（BIRDS BEAK）之影響而比原先之氮化矽光罩所定義的區域來的小，以長0.6UM之場區氧化而言，大概會有0.5UM之BIRDS BEAK存在，也就是說ACTIVE AREA比原在之氮化矽光罩所定義的區域小0.5UM。2ACTONE丙酮1. 丙酮是有機溶劑的一種，分子式為CH3COCH3。2. 性質為無色，具刺激性及薄荷臭味之液體。3. 在FAB內之用途，主要在於黃光室內正光阻之清洗、擦拭。4. 對神經中樞具中度麻醉性，對皮膚黏膜具輕微毒性，長期接觸會引起皮膚炎，