JESD22标准清单.docx

1、JESD22标准清单JESD22标准列表及简介（中英文）顺序号标准编号现行版本标准状态标准项目1.A100D Jul 2013现行循环温湿度偏置寿命2.A101C Mar 2009现行稳态温湿度偏置寿命3.A102D Nov 2010现行加速水汽抵抗性-无偏置高压蒸煮4.A103D Dec 2010现行高温贮存寿命5.A104D Mar 2009现行温度循环6.A105C Jan 2004现行上电温循7.A106B Jun 2004现行热冲击8.A107C Apr 2013现行盐雾9.A108D Nov 2010现行温度，偏置电压，以及工作寿命10.A109B Nov 2011现行，指向军标密

2、封11.A110D Nov 2010现行高加速温湿度应力试验（HAST）（有偏置电压未饱和高压蒸汽）12.A111A Nov 2010现行安装在单面板底面的小型表贴固态器件耐浸焊能力的评价流程13.A112/被替代塑封表贴器件水汽诱发的应力敏感性（被J-STD-020替代）14.A113F Oct 2008现行塑封表贴器件可靠性试验前的预处理15.A114F Dec 2008现行静电放电敏感性试验（ESD）人体模型（HBM）16.A115C Nov 2010现行静电放电敏感性试验（ESD）机器模型（MM）17.A117C Oct 2011现行电可擦除可编程只读存储器（EEPROM）编程/擦除耐

3、久性以及数据保持试验18.A118A Mar 2011现行加速水汽抵抗性无偏压HAST（无偏置电压未饱和高压蒸汽）19.A119Nov 2004现行低温贮存寿命20.A120A Jan 2008现行用于集成电路的有机材料的水汽扩散率以及水溶解度试验方法21.A121A Jul 2008现行锡及锡合金表面镀层晶须生长的测试方法22.A122Aug 2007现行功率循环23.B100B Jun 2003现行物理尺寸24.B101B Aug 2009现行外部目检25.B102E Oct 2007现行可焊性26.B103B Jun 2002现行振动，变频27.B104C Nov 2004现行机械冲击2

4、8.B105D Jul 2011现行引出端完整性29.B106D Apr 2008现行通孔安装期间的耐焊接冲击30.B107D Mar 2011现行标识耐久性31.B108B Sep 2010现行表贴半导体器件的共面性试验32.B109A Jan 2009现行倒装芯片拉脱试验33.B110B Jul 2013现行组件机械冲击34.B111Jul 2003现行手持电子产品组件的板级跌落试验35.B112A Oct 2009现行高温封装翘曲度测试方法36.B113A Sep 2012现行手持电子产品组件互连可靠性特性的板级循环弯曲试验方法37.B114A May 2011现行标识可识别性38.B1

5、15A Aug 2010现行焊球拉脱试验39.B116 A Aug 2009现行引线键合的剪切试验40.B117B May 2014现行焊球剪切41.B118Mar 2011现行半导体晶圆以及芯片背面外目检42.C100/已废止高温连续性43.C101F Oct 2013现行静电放电敏感性试验（ESD）场诱导带电器件模型JESD22- BPublished: Sep-2000 SupersededSUPERSEDED BY THE TEST METHODS INDICATED BY JESD22-A complete set of test methods can be obtained fr

6、om Global Engineering DocumentsJESD22- B发布：2000年9月 已被取代被系列测试方法“JESD22-”取代“JESD22-”是一个完整的系列试验方法，可在全球性的工程文件中取得。1.JESD22JESD22-A100CPublished: Oct-2007CYCLED TEMPERATURE HUMIDITY BIAS LIFE TEST:The Cycled Temperature-humidity-bias Life Test is performed for the purpose of evaluating the reliability of

7、nonhermetic packaged solid state devices in humid environments. It employs conditions of temperature cycling, humidity, and bias that accelerate the penetration of moisture through the external protective material (encapsulate or seal) or along the interface between the external protective material

8、and the metallic conductors that pass through it. The Cycled Temperature-Humidity-Bias Life Test is typically performed on cavity packages (e.g., MQUADs, lidded ceramic pin grid arrays, etc.) as an alternative to JESD22-A101 or JESD22-A110.JESD22-A100C发布：2007年10月 循环温湿度偏置寿命试验循环温湿度偏置寿命试验以评估非气密封装固态器件在潮

9、湿环境中的可靠性为目的。它使用循环温度，湿度，以及偏置条件来加速水汽对外部保护性材料（封装或密封）或沿着外部保护材料和贯通其的金属导体的界面的穿透作用。循环温湿度偏置寿命试验通常用于腔体封装（例如MQIADs，有盖陶瓷引脚阵列封装等），作为JESD22-A101或JESD22-A110的替代试验。2.A100 循环温湿度偏置寿命JESD22-A101-BPublished: Apr-1997STEADY-STATE TEMPERATURE HUMIDITY BIAS LIFE TEST:This standard establishes a defined method and conditi

10、ons for performing a temperature humidity life test with bias applied. The test is used to evaluate the reliability of non-hermetic packaged solid state devices in humid environments. It employs high temperature and humidity conditions to accelerate the penetration of moisture through external prote

11、ctive material or along interfaces between the external protective coating and conductors or other features which pass through it. This revision enhances the ability to perform this test on a device which cannot be biased to achieve very low power dissipation.JESD22-A101-B发布：1997年8月 稳态温湿度偏置寿命试验本标准建立

12、了一个定义的方法，用于进行一个施加偏置电压的温湿度寿命试验。本试验用于评估非气密封装固态器件在潮湿环境下的可靠性。试验采用高温和高湿条件以加速水汽对外部保护材料或沿着外部保护材料和外部保护涂层，贯通其的导体或其他部件的穿透作用。本修订版加强了在无法施加偏置以达到很低功率耗散的器件上运用本试验的能力。3.A101 稳态温湿度偏置寿命JESD22-A102-CPublished: Dec-2000 Reaffirmed June 2008ACCELERATED MOISTURE RESISTANCE - UNBIASED AUTOCLAVE:This test allows the user to

13、 evaluate the moisture resistance of nonhermetic packaged solid state devices. The Unbiased Autoclave Test is performed to evaluate the moisture resistance integrity of non-hermetic packaged solid state devices using moisture condensing or moisture saturated steam environments. It is a highly accele

14、rated test which employs conditions of pressure, humidity and temperature under condensing conditions to accelerate moisture penetration through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors passing

15、through it. This test is used to identify failure mechanisms internal to the package and is destructive.JESD22-A102-C发布：2000年12月，2008年6月经重新确认有效 加速水汽抵抗性无偏置高压蒸煮本试验允许用户评估非气密封装固态器件对水汽的抵抗力。进行无偏置高压蒸煮试验的目的在于利用水汽冷凝或水汽饱和蒸汽环境评估非气密封装固态器件的水汽抵抗力。本方法是一个高加速试验，使用冷凝条件下的压力，湿度和温度以加速水汽对外部保护性材料（封装或密封）或沿着外部保护材料和贯通其的金属导体的

16、界面的穿透作用。这一试验用于识别封装内部的失效机理，本试验为破坏性。4.A102 加速水汽抵抗性-无偏置高压蒸煮JESD22-A103CPublished: Nov-2004HIGH TEMPERATURE STORAGE LIFE:The test is applicable for evaluation, screening, monitoring, and/or qualification of all solid state devices. High Temperature storage test is typically used to determine the effect

17、of time and temperature, under storage conditions, for thermally activated failure mechanisms of solid state electronic devices, including nonvolatile memory devices (data retention failure mechanisms). During the test elevated temperatures(accelerated test conditions) are used without electrical st

18、ress applied. This test may be destructive, depending on Time, Temperature and Packaging (if any).JESD22-A103C发布：2004年11月高温贮存寿命：试验可应用于所有固态器件的评估，筛选，监控，以及鉴定。典型情况下，高温贮存试验用于确定在贮存条件下，时间和温度对固态器件，包括非易失存储器件（数据保留失效机理）的影响（由热激发的失效机理）。在试验中，只施加提高的温度应力（加速试验条件），而不施加电应力。本试验取决于时间，温度和包装（如果有），可能为破坏性。5.A103 高温贮存寿命JESD2

19、2-A104CPublished: May-2005TEMPERATURE CYCLING:This standard provides a method for determining solid state devices capability to withstand extreme temperature cycling. Changes in this revision include requirements that the worst-case load temperature must reach the specific extremes rather than just

20、requiring that the chamber ambient temperature reach the extremes. This ensures that the test specimens will reach the specified temperature extremes regardless of chamber loading. Definitions are provided for Load, Monitoring Sensor, Worst-Case Load Temperature, and Working Zone. The transfer time

21、has been tightened from 5 minutes to 1 minute. Five new test conditions have been added as well as a caution on test conditions which exceed the glass transition temperature of plastic package solid devices.JESD22-A104C发布：2005年5月温度循环：本标准提供了一种用于确定固态器件耐受极限温度循环能力的方法。在本修订版中，改变之处包括最坏条件下，加载温度而不是试验箱环境温度必须达

22、到规定的极值的要求。这保证了无论试验箱负载情况如何，试验样品均会达到规定的温度极值。本修订版提供了负载监控传感器，最坏情况负载温度，以及工作区的定义。转换时间由5分钟加严到1分钟。新增了五个试验条件，以及试验条件超过塑封固态器件玻璃化转变温度时的注意事项。6.A104 温度循环JESD22-A105CPublished: Jan-2004POWER AND TEMPERATURE CYCLING:The power and temperature cycling test is performed to determine the ability of a device to withstan

23、d alternate exposures at high and low temperature extremes and simultaneously the operating biases are periodically applied and removed. It is intended to simulate worst case conditions encountered in application environments. The power and temperature cycling test is considered destructive and is o

24、nly intended for device qualification. This test method applies to semiconductor devices that are subjected to temperature excursions and required to power on and off during all temperatures.JESD22-A105C发布：2004年1月功率温度循环：功率温度循环试验用于确定器件耐受变化的暴露于极限高低温，同时周期性施加和去除工作偏置。本试验的目的是模拟应用环境中达到的最严苛条件。功率温度循环试验视为破坏性，

25、且只用于器件的鉴定。本试验方法应用于需经受超温，需要在所有温度条件上下电的半导体器件。7.A105 上电温循JESD22-A106BPublished: Jun-2004THERMAL SHOCK:This test is conducted to determine the resistance of a part to sudden exposure to extreme changes in temperature and to the effect of alternate exposures to these extremes.JESD22-A106C发布：2004年6月热冲击：本试

26、验用于确定部件对于突然暴露于极限温变条件的抵抗力，以及交替暴露于这些极限条件的影响。8.A106 热冲击JESD22-A107CPublished: April-2013SALT ATMOSPHERE:This salt Atmosphere test is conducted to determine the resistance of solid state devices to corrosion. It is an accelerated test that simulates the effects of severe seacoast atmosphere on all expos

27、ed surfaces. The salt atmosphere test is considered destructive. It is intended for lot acceptance, process monitor, and qualification testing.The latest revision of Method 1041 of MIL-STD-750 shall be used for discrete solid-state devices.The latest revision of Method 1009 of MIL-STD-883 shall be u

28、sed for solid-state microcircuits, integrated circuits, hybrids, and modules.JESD22-A107C发布：2013年4月盐雾：本盐雾试验用于确定固态器件对于腐蚀的抵抗力。本方法是一个加速试验方法，模拟严酷的海滨气氛环境对所有暴露表面的影响。本盐雾试验视为破坏性。本试验可用于批接收，工艺监控，以及鉴定试验。MIL-STD-750试验方法1041的最后修订版应用于分立固态器件。MIL-STD-883试验方法1009的最后修订版应用于固态微电路、集成电路及组件。9.A107 盐雾JESD22-A108CPublished:

29、 Jun-2005TEMPERATURE, BIAS, AND OPERATING LIFE:A revised method for determining the effects of bias conditions and temperature, over time, on solid state devices is now available. Revision B of A108 includes low temperature operating life (LTOL) and high temperature gate bias (HTGB) stress condition

30、s, revised cool down requirements for high temperature stress, and a procedure to follow if parts are not tested within the allowed time window.JESD22-A108C发布：2005年6月温度，偏置电压，以及工作寿命：本标准提供了一个可用的经修订的试验方法，用于确定偏置条件和温度在长时间下对固态器件的作用。A108修订版B包括了低温工作寿命（LTOL）以及高温栅偏（HTGB）应力条件，修订了高温应力的冷却需求，以及如果样品没有在允许的时间窗口中测试的情

31、况下，应遵循的程序。10.A108 温度，偏置电压，以及工作寿命JESD22-A109BPublished: Nov-2011, Rewrite of total doc to point to Military standards.HERMETICITY:Most of these tests are controlled and updated in the military standards, the two standards that apply are MIL-STD-750 for Discretes, & MIL-STD-883 for microcircuits. The test within these standa