PHD78NQ03LTn沟道增强型场效应管精.docx
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PHD78NQ03LTn沟道增强型场效应管精
PHP/PHB/PHD78NQ03LT
N-channelenhancementmodefield-effecttransistor
Rev.01—14November2001
Productdata
1.Productprofile
1.1Description
N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology.Productavailability:
PHP78NQ03LTinSOT78(TO-220ABPHB78NQ03LTinSOT404(D2-PAKPHD78NQ03LTinSOT428(D-PAK.
1.2Features
sLowon-stateresistance
sFastswitching
1.3Applications
sComputermotherboards
sDCtoDCconverters
1.4Quickreferencedata
sVDS=25V
sPtot=93W(Tmb=25°C
sID=75A(Tmb=25°CsRDSon=9mΩ(Tj=25°C
2.Pinninginformation
Table1:
23mb
Pinning-SOT78,SOT404,SOT428simplifiedoutlinesandsymbol
drain(dsource(smountingbase,connectedto
drain(d
mb
[1]
g
MBK116
2
1Topview
3
MBK091
MBB076
SOT78(TO-220AB
[1]
SOT404(D2-PAK
SOT428(D-PAK
Itisnotpossibletomakeconnectiontopin2oftheSOT404orSOT428packages.
3.Limitingvalues
Table2:
Limitingvalues
InaccordancewiththeAbsoluteMaximumRatingSystem(IEC60134.
DSVDGRVGSVGSMID
drain-gatevoltage(DCgate-sourcevoltage(DCgate-sourcevoltagedraincurrent(DC
tp≤50µs;pulsed;
dutycycle25%;Tj≤150°C
Tmb=25°C;VGS=5V;Figure2and3Tmb=100°C;VGS=5V;Figure2Tmb=25°C;VGS=10VTmb=100°C;VGS=10V
IDMPtotTstgTjISISM
peakdraincurrenttotalpowerdissipationstoragetemperature
operatingjunctiontemperature
source(diodeforwardcurrent(DCTmb=25°C
peaksource(diodeforwardcurrentTmb=25°C;pulsed;tp≤10µs
Tmb=25°C;pulsed;tp≤10µs;Figure3Tmb=25°C;Figure1jTj=25to175°C;RGS=20kΩ
---------−55−55--25±15±206143755322893+175+17575228
VVVAAAAAW°C°CAA
Source-draindiode
4.Thermalcharacteristics
Table3:
Rth(j-mbRth(j-a
Thermalcharacteristics
Figure4
verticalinstillair;SOT78package
mountedonaprintedcircuitboard;minimumfootprint;SOT404andSOT428packages
1.66050
K/WK/WK/W
thermalresistancefromjunctiontomountingbase
thermalresistancefromjunctiontoambient
4.1Transientthermalimpedance
5.Characteristics
Table4:
Characteristics
T
=25°Cunlessotherwisespecified.V(BRDSSdrain-sourcebreakdownvoltage
ID=0.25mA;VGS=0VTj=25°CTj=−55°C
VGS(th
gate-sourcethresholdvoltage
ID=1mA;VDS=VGS;Figure9Tj=25°CTj=175°CTj=−55°C
IDSS
drain-sourceleakagecurrent
VDS=25V;VGS=0VTj=25°CTj=175°C
IGSSRDSon
gate-sourceleakagecurrentdrain-sourceon-stateresistance
VGS=±15V;VDS=0V
VGS=5V;ID=25A;Figure7and8Tj=25°CTj=175°CVGS=10V;ID=25A;Tj=25°C
DynamiccharacteristicsgfsQg(totQgsQgdCissCossCrsstd(ontrtd(offtfVSDtrrQrr
forwardtransconductancetotalgatechargegate-sourcechargegate-drain(Millerchargeinputcapacitanceoutputcapacitance
reversetransfercapacitanceturn-ondelaytimeturn-onrisetimeturn-offdelaytimeturn-offfalltime
source-drain(diodeforwardvoltageIS=25A;VGS=0V;Figure12reverserecoverytimerecoveredcharge
IS=20A;dIS/dt=−100A/µs;VDS=25VVDD=15V;ID=25A;VGS=10V;RG=5.6Ω;resistiveload
VGS=0V;VDS=25V;f=1MHz;Figure11VDS=25V;ID=50A
ID=50A;VDD=15V;VGS=5V;Figure13
--------------34134.84.238915*********0.954032
---5.6--3313048601.2--SnCnCnCpFpFpFnsnsnsnsVnsnC
-7.65
9
mΩ
--11.520.7
13.524.3
mΩmΩ
---0.05-10
10500100
µAµAnA
10.5-1.5--2-2.3
VVV
2522
----VV
1074-
Source-draindiode
939775008916©KoninklijkePhilipsElectronicsN.V.2001.Allrightsreserved.
939775008916©KoninklijkePhilipsElectronicsN.V.2001.Allrightsreserved.
939775008916©KoninklijkePhilipsElectronicsN.V.2001.Allrightsreserved.
6.Packageoutline
Plasticsingle-endedpackage;heatsinkmounted;1mountinghole;3-leadTO-220AB
SOT78
Fig14.SOT78(TO-220AB.
939775008916
©KoninklijkePhilipsElectronicsN.V.2001.Allrightsreserved.
Plasticsingle-endedsurfacemountedpackage(PhilipsversionofD2-PAK;3leads(oneleadcropped
SOT404
Fig15.SOT404(D2-PAK
939775008916
©KoninklijkePhilipsElectronicsN.V.2001.Allrightsreserved.
PhilipsSemiconductorsPHP/PHB/PHD78NQ03LTN-channelenhancementmodefield-effecttransistorPlasticsingle-endedsurfacemountedpackage(PhilipsversionofD-PAK;3leads(oneleadcroppedSOT428seatingplaneyAEb2AA1mountingbaseA2D1E1DHEL22LL11b1ee1b3wMAc010scale20mmDIMENSIONS(mmaretheoriginaldimensionsAUNITmax.mm2.382.22A1(10.650.45A20.890.71b0.890.71b1max.1.10.9b25.365.26c0.40.2D1EDmax.max.max.6.225.984.814.456.736.47E1min.4.0ee1HEmax.10.49.6L2.952.55L1min.0.5L20.70.5w0.2ymax.0.22.2854.57Note1.Measuredfromheatsinkbacktolead.OUTLINEVERSIONSOT428REFERENCESIECJEDECTO-252EIAJSC-63EUROPEANPROJECTIONISSUEDATE98-04-0799-09-13Fig16.SOT428(D-PAK939775008916©KoninklijkePhilipsElectronicsN.V.2001.Allrightsreserved.ProductdataRev.01—14November200111of14
PhilipsSemiconductorsPHP/PHB/PHD78NQ03LTN-channelenhancementmodefield-effecttransistor7.RevisionhistoryTable5:
RevDate0120011114RevisionhistoryCPCNDescriptionProductdata;initialversion.939775008916©KoninklijkePhilipsElectronicsN.V.2001.Allrightsreserved.ProductdataRev.01—14November200112of14
PhilipsSemiconductorsPHP/PHB/PHD78NQ03LTN-channelenhancementmodefield-effecttransistor8.DatasheetstatusDatasheetstatus[1]ObjectivedataPreliminarydataProductstatus[2]DevelopmentQualificationDefinitionThisdatasheetcontainsdatafromtheobjectivespecificationforproductdevelopment.PhilipsSemiconductorsreservestherighttochangethespecificationinanymannerwithoutnotice.Thisdatasheetcontainsdatafromthepreliminaryspecification.Supplementarydatawillbepublishedatalaterdate.PhilipsSemiconductorsreservestherighttochangethespecificationwithoutnotice,inordertoimprovethedesignandsupplythebestpossibleproduct.Thisdatasheetcontainsdatafromtheproductspecification.PhilipsSemiconductorsreservestherighttomakechangesatanytimeinordertoimprovethedesign,manufacturingandsupply.ChangeswillbecommunicatedaccordingtotheCustomerProduct/ProcessChangeNotification(CPCNprocedureSNW-SQ-650A.ProductdataProduction[1][2]Pleaseconsultthemostrecentlyissueddatasheetbeforeinitiatingorcompletingadesign.Theproductstatusofthedevice(sdescribedinthisdatasheetmayhavechangedsincethisdatasheetwaspublished.ThelatestinformationisavailableontheInternetatURL.9.DefinitionsShort-formspecification—Thedatainashort-formspecificationisextractedfromafulldatasheetwiththesametypenumberandtitle.Fordetailedinformationseetherelevantdatasheetordatahandbook.Limitingvaluesdefinition—LimitingvaluesgivenareinaccordancewiththeAbsoluteMaximumRatingSystem(IEC60134.Stressaboveoneormoreofthelimitingvaluesmaycausepermanentdamagetothedevice.ThesearestressratingsonlyandoperationofthedeviceattheseoratanyotherconditionsabovethosegivenintheCharacteristicssectionsofthespecificationisnotimplied.Exposuretolimitingvaluesforextendedperiodsmayaffectdevicereliability.Applicationinformation—Applicationsthataredescribedhereinforanyoftheseproductsareforillustrativepurposesonly.PhilipsSemiconductorsmakenorepresentationorwarrantythatsuchapplicationswillbesuitableforthespecifiedusewithoutfurthertestingormodification.10.DisclaimersLifesupport—Theseproductsarenotdesignedforuseinlifesupportappliances,devices,orsystemswheremalfunctionoftheseproductscanreasonablybeexpectedtoresultinpersonalinjury.PhilipsSemiconductorscustomersusingorsellingtheseproductsforuseinsuchapplicationsdosoattheirownriskandagreetofullyindemnifyPhilipsSemiconductorsforanydamagesresultingfromsuchapplication.Righttomakechanges—PhilipsSemiconductorsreservestherighttomakechanges,withoutnotice,intheproducts,includingcircuits,standardcells,and/orsoftware,describedorcontainedhereininordertoimprovedesignand/orperformance.PhilipsSemiconductorsassumesnoresponsibilityorliabilityfortheuseofanyoftheseproducts,conveysnolicenceortitleunderanypatent,copyright,ormaskworkrighttotheseproducts,andmakesnorepresentationsorwarrantiesthattheseproductsarefreefrompatent,copyright,ormaskworkrightinfringement,unlessotherwisespecified.11.TrademarksTrenchMOS—isatrademarkofKoninklijkePhilipsElectronicsN.V.ContactinformationForadditionalinformation,pleasevisit.Forsalesofficeaddresses,sende-mailto:
sales.addresses@.939775008916Fax:
+31402724825©KoninklijkePhilipsElectronicsN.V.2001.Allrightsreserved.ProductdataRev.01—14November200113of14
PhilipsSemiconductorsPHP/PHB/PHD78NQ03LTN-channelenhancementmodefield-effecttransistorContents11.11.21.31.42344.1567891011Productprofile..........................1Description............................1Features..............................1Applications...........................1Quickreferencedata.....................1Pinninginformation......................1Limitingvalues..........................2Thermalcharacteristics...................4Transientthermalimpedance....