如何正确读懂英飞凌的IGBT的资料.docx

如何正确读懂英飞凌的IGBT的资料.docx

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Infineon datasheetunderstanding

IFXAIM

ZhouYizheng

Infineondatasheetunderstanding

Currentparameters

Currentparameters

Voltageparameters

Voltageparameters

Switchingparameters

Switchingparameters

Diodeparameters

Diodeparameters

Moduleparameters

Thermalparameters

Thermalparameters

Moduleparameters

Forinternaluseonly

Page2

Currentparameters

•Nominalcurrent（ICnom）

Specifiedasdatacode:

FF450R17ME3

Nomnacurrentsspecfedat80℃,25℃vauesasogvenasreference

Tc=Tjmax

-（Vcesat,max

@Tjmax

*ICnom

*Rthjc）

Forinternaluseonly Page3

Calculatedvaluewillbehigherthandatasheetvalue,allnominalcurrentistakenasinteger

ThisvaluejustrepresentsIGBTDCbehavior,canbeareferenceofchoosingIGBT,butnotyardstick.

•Pulsecurrent（ICRMIRBSOA）

ICRMisdefinedasrepetitiveturnonpulsecurrent

IRBSOAisdefinedasmaximumturnoffcurrent

ICRM

IRBSOA

IC VCE

VGE

Forinternaluseonly Page4

1msisjusttestcondition,realpulsewidthisdependonthermal

•Shortcircuitcurrent（ISC）

VCE

IC

VGE

VCE

IC

VGE

Forinternaluseonly Page5

scShortbeforeSwtchOn scShortafterSwtchOn

Theshortcircuitcurrentvalueisatypicalvalue.Inapplications,theshortcircuittimeshouldnotexceed10us.

•Shortcircuitcondition:

¬ VGE:

gatevoltage（15V）

¬ VCC:

DCbusvoltage

¬ Tvj:

shortcircuitstarttemperature

VGE



ISC



tSC

Forinternaluseonly Page6

InfineontestshortcircuitatmaximumoperationTj

Voltageparameters

•Blockingvoltage（VCES）

VCESspecifiedatTj=25℃.HigherTj,higherblockingvoltage

Chiplevel

Modulelevel

Duetostrayinductanceinsidemodule

DV=



di/dt*Ld

RBSOA

VCESiseasiesttobeexceedduringturnoff,duetoexternalandinternalstrayinductance

Forinternaluseonly Page7

VCEScannotbeviolatedatanycondition,otherwiseIGBTwouldbreakthough

•Saturationvoltage（VCEsat）

VCEsatsspecfedatnomna current,bothTj=25℃and125℃aregven

InfineonIGBTareallpositivetemperaturecoefficient

Goodforparalleling

VCEsatvalueistotallyatchiplevel,excludingleadresistance

Forinternaluseonly

Page8

Forinternaluseonly Page9

VCEsatincreasewithICincreasing

VCEsatincreasewithVGEdecreasing

VGEisnotrecommendedtousetoosmall,ThisincreasesIGBTbothconductionandswitchinglosses

VCEsatvalueisusedtocalculateconductionlosses

VCE

=VT0+RCE

*IC

C

R =DVCE



=VCE

（2）



-VCE

（1）

ΔIC

CE DI

IC

（2）

-IC

（1）

RCE

ΔVCE

VT0

Basicdataforconductionlossescalculation

Tangentpointshouldsetclosetooperatingpoint

ForSPWMcontrol,theconductionlossesis:

2

P =1（V

*IP+R

*IP



）+m*cosj



*（V

*IP+

1 *R



*I 2）

cond,IGBT

2 T0 p

CE 4

T0 8 3p

CE P

Forinternaluseonly



m:

modulationfact;IP:

outputpeakcurrent;cosφ:

powerfactor

Page10

Switchingparameters

•Internalgateresistor（RGint）

Torealizemoduleinternalchipcurrentsharing,moduleintegrateinternalgateresistor.Thisvalueshouldbeconsideredasonepartoftotalgateresistortocalculatepeakcurrentcapabilityofadriver

Forinternaluseonly

Page11

•Externalgateresistor（RGext）

Externalgateresistoriswhatusercanset,thisvalueinfluenceIGBTswitchingperformance

TheminimumrecommendedRgextisshownintheswitchingtestcondition

UsercangetdifferentRGonandRGoffbyadecouplingdiode

RGon

=R1

//R2,RGoff

=R2

Forinternaluseonly Page12

Thisisjustanexample.Therearealotofcircuittorealizeit

MinimumRGonislimitedbyturnondi/dt,minimumRGoffislimitedbyturnoffdv/dt.ToosmallRGcauseoscillationandmaydestroyIGBTanddiode

•Externalgatecapacitor（CGE）

HighvoltagemoduleisrecommendedtousedexternalCGEtocontrolgateturnonspeed.

WithexternalCGE,turnondi/dtanddv/dtcanbedecoupled.Thishelptorealizelowturnonlosseswithlimitedturnondi/dt