低功耗霍尔元件DH471.docx
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低功耗霍尔元件DH471
深圳凯祥科技有限公司DH47系列
V2.00Apr.25,20111/9
11.Features
Micropowerconsumptionforbatterypoweredapplications
Omnipolar,outputswitcheswithabsolutevalueofNorthor
Southpolefrommagnet
Operationdownto2.5V
Highsensitivityfordirectreedswitchreplacementapplications
CMOSoutput
2.Chopperstabilizedamplifierstage2.Description
TheDH471OmnipolarHalleffectsensorICisfabricatedfrommixedsignalCMOStechnology.Itincorporatesadvancedchopper-stabilizationtechniquestoprovideaccurateandstablemagneticswitchpoints.
ThecircuitdesignprovidesaninternallycontrolledclockingmechanismtocyclepowertotheHallelementandanalogsignalprocessingcircuits.Thisservestoplacethehighcurrent-consumingportionsofthecircuitintoa“Sleep”mode.Periodicallythedeviceis“Awakened”bythisinternallogicandthemagneticfluxfromtheHallelementisevaluatedagainstthepredefinedthresholds.IfthefluxdensityisaboveorbelowtheBop/Brpthresholdsthentheoutputtransistorisdriventochangestatesaccordingly.Whileinthe“Sleep”cycletheoutputtransistorislatchedinitspreviousstate.Thedesignhasbeenoptimizedforserviceinapplicationsrequiringextendedoperatinglifetimeinbatterypoweredsystems.
TheoutputtransistoroftheDH471willbelatchedon(Bop)inthepresenceofasufficientlystrongSouthorNorthmagneticfieldfacingthemarkedsideofthepackage.Theoutputwillbelatchedoff(Brp)intheabsenceofamagneticfield.
3.Applications
Solidstateswitch
HandheldWirelessHandsetAwakeSwitch
Lidclosesensorforbatterypowereddevices
Magnetproximitysensorforreedswitchreplacementinlowdutycycleapplications
4.TypicalApplicationCircuit
Innosen'spole-independentsensingtechniqueallowsfor
operationwitheitheranorthpoleorsouthpolemagnet
orientation,enhancingthemanufacturabilityofthedevice.
Thestate-of-the-arttechnologyprovidesthesameoutput
polarityforeitherpoleface.
Itisstronglyrecommendedthatanexternalbypasscapacitorbeconnected(incloseproximitytotheHallsensor)betweenthesupplyandgroundofthedevicetoreducebothexternalnoiseandnoisegeneratedbythechopper-stabilizationtechnique.Thisisespeciallytrueduetotherelativelyhighimpedanceofbatterysupplies.
5.FunctionalBlockDiagram
6.Pinning
MarkView
PinDescription
7.InternalTimingCircuit
8.AbsoluteMaximumRatings
absolute-maximumratedconditionsforextendedperiodsmayaffectdevicereliability.
9.DCElectricalCharacteristics
DCOperatingParameters:
TA=25℃,VDD=2.75V.
Time
Current
Isp
Iaw
Iav
10.MagneticCharacteristics
OperatingParameters:
TA=25℃,VDD=2.75VDC.
11.ESDProtection
12.PerformanceCharacteristics
13.UniqueFeatures
CMOSHallICTechnology
Thechopperstabilizedamplifierusesswitchedcapacitortechniquestoeliminatetheamplifier
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offsetvoltage,which,inbipolardevices,isamajorsourceoftemperaturesensitivedrift.CMOSmakesthisadvancedtechniquepossible.TheCMOSchipisalsomuchsmallerthanabipolarchip,allowingverysophisticatedcircuitrytobeplacedinlessspace.Thesmallchipsizealsocontributestolowerphysicalstressandlesspowerconsumption.
InstallationComments
ConsidertemperaturecoefficientsofHallICandmagnetics,aswellasairgapandlifetimevariations.Observetemperaturelimitsduringwavesoldering.TypicalIRsolder-reflowprofile:
NoRapidHeatingandCooling.
RecommendedPreheatingformax.2minutesat150?
C
RecommendedReflowingformax.5secondsat240?
C
14.ESDPrecautions
ElectronicsemiconductorproductsaresensitivetoElectroStaticDischarge(ESD).AlwaysobserveElectroStaticDischargecontrolprocedureswheneverhandlingsemiconductorproducts.
15.PackageInformation
15.1TSOT-23PackagePhysicalCharacteristics
TSOT-23PackageHallLocation
0.300.60
3.00
EndView
Notes:
1).PINOUT:
Pin1VDDPin2OutputPin3GND
2).Alldimensionsareinmillimeters;
Marking:
47--CodeofDevice(DH471);y--last1digitofyear;mm--ProductionLot
;
15.2TO-92PackagePhysicalCharacteristics
15.3DFN2020-3(QFN2020-3)PackagePhysicalCharacteristics
DFN2020-3PackageDimensionDFN2020-3HallPlate/ChipLocation
0.84(Nom)
Notes:
1).Controllingdimension:
mm;
2).Lesdsmustbefreeofflashandplatingvoids;3).Donotbendleadswithin1mmofleadtopackage
interface;
4).PINOUT:
Pin1VDDPin2GNDPin3OutputMarking:
47--CodeofDevice(ES247);y--last1digitofyear;mm--ProductionLot;
ActiveAreaDepth:
Hall
plate
16.OrderingInformation
PartNo.TemperatureSuffixPackageCodeDH471E(-40℃to85℃)UA(TO-92S)
ST(TSOT-23)
DF(DFN2020-3)