Microfabrication by electrochemical metal removalWord文件下载.docx

上传人:b****6 文档编号:20188837 上传时间:2023-01-17 格式:DOCX 页数:12 大小:27.64KB
下载 相关 举报
Microfabrication by electrochemical metal removalWord文件下载.docx_第1页
第1页 / 共12页
Microfabrication by electrochemical metal removalWord文件下载.docx_第2页
第2页 / 共12页
Microfabrication by electrochemical metal removalWord文件下载.docx_第3页
第3页 / 共12页
Microfabrication by electrochemical metal removalWord文件下载.docx_第4页
第4页 / 共12页
Microfabrication by electrochemical metal removalWord文件下载.docx_第5页
第5页 / 共12页
点击查看更多>>
下载资源
资源描述

Microfabrication by electrochemical metal removalWord文件下载.docx

《Microfabrication by electrochemical metal removalWord文件下载.docx》由会员分享,可在线阅读,更多相关《Microfabrication by electrochemical metal removalWord文件下载.docx(12页珍藏版)》请在冰豆网上搜索。

Microfabrication by electrochemical metal removalWord文件下载.docx

Microfabricationbyelectrochemicalmetalremoval@#@Microfabricationbyelectrochemicalmetalremoval@#@Datta,M@#@Recentadvancesinthedevelopmentofelectrochemicalmetal-removalprocessesformicrofabricationarereviewedinthispaper.Afterabriefdescriptionoftheprocess,severalimportantparametersareidentifiedthatdeterminethematerial-removalrate,shapecontrol,surfacefinishing,anduniformity.Theinfluenceofsurfacefilmproperties,masstransport,andcurrentdistributiononmicrofabricationperformancearediscussed.Severalexamplesofmicroelectroniccomponentfabricationarepresented.Theseexamplesdemonstratethechallengesandopportunitiesofferedbyelectrochemicalmetalremovalinmicrofabrication.Introduction@#@Material-removaltechniquesareamongthekeyprocessingtechnologiesthatareusedinthefabricationofmicroelectroniccomponents[1].Thesemethodsarepopularlyknownasetchingtechniques.Dryvacuumprocessesforthin-filmetchingarebasedonplasmaassistedprocessesandincludeionetching,plasmaetching,andreactiveionetching[1].Ionetchingisaphysicalprocess,whereasplasmaetchinginvolvesachemicalreaction.Reactiveionetchingisacombinationofbothphysicalandchemicaleffectscontributingtomaterialremoval.Inionetching,ionsareextractedfromagaseousplasmaandacceleratedtothesubstrate,wherethesurfaceiserodedbymomentumtransfer.Plasmaetchingemploysaglowdischargetogenerateactivespeciessuchasatomsorfreeradicals.Theactivespeciesdiffusetothesubstrate,wheretheyreactwiththesurfacetoproducevolatileproducts.Additionofreactivegasestotheionsource(reactiveionetching)enhancesthephysicaletchrateandintroduceschemicaletchingaswell.Theseprocessesareparticularlyemployedinthesemiconductorindustryforultralarge-scaleintegration(ULSI)becauseoftheirabilitytoremovematerialwithprecision.However,someofthedisadvantagesthatareinherentindry-etchingtechniquesincludehighequipmentcost,lackofselectivity,andproblemsarisingfromredepositiononthesampleanddepositiononthevacuumchamber.Dry-etchingtechniquesareusedforprecisionetchingofthinfilmsinvolvingverysmallamountsofmaterialremoval.Lately,concernhasintensifiedaboutthesafety,environmentalimpact,anddisposalofthetoxicgasesusedinplasmaassisteddryetching.@#@Wetchemicaletchinginvolvesremovalofunwantedmaterialbytheexposureoftheworkpiecetoanetchant.Theexposedmaterialisoxidizedbythereactivityoftheetchanttoyieldreactionproductsthataretransportedfromthesurfacebythemedium.Chemicaletchingconvertsasolidinsolublematerialtoasolubleformbydissolvingtheextendedlatticeofmetalatomssothattheseatomscanenterthesolutionassolublecompounds.Thisisaccompaniedbyremovalofelectronsfromthemetal(oxidation).Theseelectronsareacceptedbytheetchant,whichactsasanoxidizingagentinchemicaletching.Themetal-removalreactiontypicallyinvolvesseveralsequentialsteps,thedissolutionkineticsbeingcontrolledeitherbythechemicalreactivityofthespeciesinvolved(activation-controlled)orbythespeedatwhichthereactionproductisremovedfromthesurfaceandthefreshreactantissuppliedtothesurface(diffusion-ormass-transport-controlled).Temperaturevariationsalsoprofoundlyinfluencethekineticsofmetal-removalreaction.@#@Wetchemicaletchingbathscontainchemicalsthataregenerallyaggressiveandtoxic[2],thusposingsafetyanddisposalproblems.Inmanywet-etchingmanufacturingprocesses,wastetreatmentanddisposalcostsoftensurpassactualetchingprocessingcosts.Theeverincreasingcostofincinerationandtheimpositionoflandfillingrestrictionsarethemainreasonsbehindtheneedfordevelopingalternativeprocesses.@#@Electrochemicalmetalremovalisanalternativewetetchingprocesswheretheworkpieceismadeananodeinanelectrolyticcellinwhichasaltsolutionisusedasanelectrolyteandcontrolledmetalremovaltakesplacebyapplicationofanexternalcurrent.Severalnonconventionalmachiningprocessessuchaselectrochemicalmachining(ECM)andelectropolishingarebasedontheprincipleofelectrochemicalmetalremoval[3,4].TheECMprocesshasbeenusedpredominantlyintheproductionofturbineenginepartsandforotheraerospaceapplications,butapplicationsofECMalsoexistintheproductionofautomotivecomponents,medicalimplants,applianceparts,artilleryprojectiles,gun-barrelrifling,etc.becauseofitsabilitytomachinecomplexfeaturesandcomplicatedcontourswithoutmachiningmarks,burrs,orsurfacestresses.ECMisusedtoperformmachiningoperationsanalogoustobroaching,turning,anddiesinking,whilestaticmachiningwithastationarytoolisusedtodeburr,polish,and/orradiuscomponents.Therapidmetalremovalratealongwiththeadvantageofnonconsumedtoolingmakesitanattractiveprocessformetalshapingandfinishing.However,electrochemicalmetalremovalhasreceivedlittleattentionsofarinthemicroelectronicsindustry.Recentinvestigationsofthedevelopmentofadvancedelectrochemicalmetal-removalprocessesdemonstratethattheECMconceptscanbeeffectivelyusedintheremovalandpatterningofconductingfilmsthatareofinterestintheelectronicsindustry[5,6].@#@Electrochemicalmicromachining(EMM)@#@ApplicationofECMintheprocessingofthinfilmsandinthefabricationofmicrostructuresisreferredtoaselectrochemicalmicromachining(EMM).Comparedtopredominantlyusedchemicaletching,theEMMprocessoffersbettercontrolandflexibility,requiresverylittlemonitoringandcontrol,andhasminimumsafetyandenvironmentalconcerns[5,6].AvarietyofmetalsandalloyscanbemachinedbyEMM.EMMisnowreceivingconsiderableattentionintheelectronicsandotherhightechnologyindustries,particularlyasanalternate,"@#@greener"@#@methodofprocessingmetallicparts[5,6].@#@Mostofthethinfilmsofmetalsandalloys,includingconductingceramicsandhighlycorrosion-resistantalloys,thatareofinterestinthemicroelectronicsindustrycanbeanodicallydissolvedinneutralsaltelectrolytessuchassodiumnitrate,sulfate,orchloride.Intheseelectrolytes,thedissolvedmetalionsformhydroxideprecipitateswhichremaininsuspendedforminsolutionandcanbeeasilyfiltered,thussignificantlyminimizingproblemsofsafetyandwastedisposal.Hydrogenevolutionisgenerallythemaincathodicreaction.Thecathode,therefore,remainsunaltered.AccumulationofreactionproductsinsolutionanddepletionofbathcomponentsareoflittleconcerninEMM,thusmakingitasimplerandmoreenvironmentallyfriendlymanufacturingprocess.@#@MicrofabricationbyEMMmayinvolvemasklessorthrough-maskmaterialremoval.Thin-filmpatterningbymasklessEMMrequireshighlylocalizedmaterialremovalinducedbytheimpingementofafineelectrolyticjet[5,7].Investigationofjetandlaser-jetEMMdemonstratedthatneutralsaltsolutionscanbeeffectivelyusedforhighspeedmicromachiningofmanymetalsandalloys.AnexampleofsuchaninvestigationisshowninFigure1,whichdemonstratesthefeasibilityofemployinganelectrolyticjetforgeneratingcomplicatedpatternsinmetallicfoilsandsubstrates.OtherexamplesofmasklessEMMincludemicrofinishingofcomponentsandremovalofunwantedlayersofthinfilmsbyelectromilling[8].@#@EMMinconjunctionwithaphotoresistmaskisofconsiderableinterestinmicroelectronicfabrication.Through-maskEMMinvolvesselectivemetaldissolutionfromunprotectedareasofaone-ortwo-sidedphotoresistpatternedworkpiece.Through-maskmetalremovalbywetetchingisaccompaniedbyundercuttingofthephotoresistandisgenerallyisotropicinnature.Inisotropicetching,thematerialisremovedbothverticallyandlaterallyatthesamerate.Thisisparticularlythecaseinchemicaletching,wheretheetchboundaryusuallyrecedesata45deganglerelativetothesurface[2].InEMM,however,themetal-removalrateinthelateraldirectionmaybesignificantlyreducedthroughproperconsiderationofmasstransportandcurrentdistribution[5].Etchfactorisdefinedastheratiooftheamountofstraight-throughetchtotheamountofundercut[6].Forapplicationsrequiringhighaspectratio,minimizedundercuttingofthephotoresistandahighvalueofetchfactoraredesirable.@#@EMMperformancecriteria@#@Themetal-removalrate,microfeatureprofile,surfacefinish,anduniformityofmetalremovalaresomeoftheperformancecriteriathatdeterminethetechnicalfeasibilityofametal-removalprocess.InEMM,thesecriteriaaredependentontheabilityofthesystemtoprovidedesiredmass-transportrates,currentdistribution,andsurfacefilmpropertiesattheactivesurface(Figure2).Anunderstandingofthemetal-electrolyteinteractionunderhigh-rateanodicdissolutionconditionsisaprerequisiteforoptimizingprocessparameterssuchaselectrolytecompositionandvoltage/current.Thedevelopmentofprecisiontoolsrequiresanunderstandingoftheinfluenceofhydrodynamics,currentdistribution,andprocessparametersontheEMMperformance.Aprecisiontoolshouldprovideconditionsofdesiredcurrentdistributionandahighrateofuniformmasstransportatthedissolvingsurface[5].@#@Inthrough-maskprocesses,additionalissuesrelatedtolithographyprocessingarecriticaltoachievingdesiredperformance.Productionofthemasterartwork,surfacepreparation,choiceofproperphotoresist,andimagingareextremelyimportantinthesuccessfulimplementationofanetchingprocess.Sincepartsproducedbythisprocessareadirectreflectionofthemasterartwork,itisessentialthatallaspectsofpreparingth

展开阅读全文
相关资源
猜你喜欢
相关搜索

当前位置:首页 > 高等教育 > 工学

copyright@ 2008-2022 冰豆网网站版权所有

经营许可证编号:鄂ICP备2022015515号-1