DynamicallyadjustableslurryfeedarmforwafereWord文件下载.docx

DynamicallyadjustableslurryfeedarmforwafereWord文件下载.docx

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Dynamicallyadjustableslurryfeedarmforwafere@#@DynamicallyadjustableslurryfeedarmforwaferedgeprofileimprovementinCMP@#@ @#@ @#@ @#@ @#@@#@ @#@ @#@ @#@ @#@@#@ @#@ @#@ @#@ @#@@#@FIELDOFTHEINVENTION@#@Thisinventiongenerallyrelatestochemicalmechanicalpolishing（CMP）andmoreparticularlytoadynamicallyadjustableslurryfeedarmandmethodforadjustingthesameforimprovingapolishinglayerthicknessuniformityincludingaprocesssurfacewaferedgeprofileinaCMPprocess.@#@BACKGROUNDOFTHEINVENTION@#@Insemiconductorfabricationintegratedcircuitsandsemiconductingdevicesareformedbysequentiallyformingfeaturesinsequentiallayersofmaterialinabottom-upmanufacturingmethod.Themanufacturingprocessutilizesawidevarietyofdepositiontechniquestoformthevariouslayeredfeaturesincludingvariousetchingtechniquessuchasanisotropicplasmaetchingtoformdevicefeatureopeningsfollowedbydepositiontechniquestofillthedevicefeatures.Inordertoformreliabledevices,closetolerancesarerequiredinformingfeaturesincludinganisotropicetchingtechniqueswhichrelyheavilyonlayerplanarizationtoformconsistentlydeepanisotropicallyetchedfeatures.@#@Inaddition,excessivedegreesofsurfacenonplanaritywillundesirablyaffectthequalityofseveralsemiconductormanufacturingprocessesincluding,forexample,photolithographicpatterningprocesses,wherethepositioningtheimageplaneoftheprocesssurfacewithinanincreasinglylimiteddepthoffocuswindowisrequiredtoachievehighresolutionsemiconductorfeaturepatterns.@#@Chemicalmechanicalpolishing（CMP）isincreasinglybeingusedasaplanarizingprocessforsemiconductordevicelayers,especiallyfordeviceshavingmulti-leveldesignandsmallersemiconductorfabricationprocesses,forexample,belowabout0.25micron.CMPplanarizationistypicallyusedseveraldifferenttimesinthemanufactureofamulti-levelsemiconductordevice,includingplanarizinglevelsofadevicecontainingbothdielectricandmetalportionstoachieveglobalplanarizationforsubsequentprocessingofoverlyinglevels.@#@Forexample,intheCMPofoxidecontaininglayerssuchasdielectricinsulatinglayersalsoreferredtoasinter-layerdielectric（ILD）layersandinter-metaldielectric（IMD）layers,itisimportanttoachieveahighdegreeofplanarityduringILDremoval.Forexample,followingformationoftheILDlayer,viaformationprocessiscarriedouttoformelectricalinterconnectionsbetweenelectricallyconductiveportionsofanunderlyingILDlayerandanelectricallyconductiveportionofanoverlyingILDlayer.IntheeventthatthethicknessuniformityisnotwithinspecificationsfollowingtheoxideorILDCMPprocess,asubsequentanisotropicetchingprocessinrelativelythickerILDlayerportionstoformtheviainterconnect,forexampleatawaferedgeportion（e.g.,periphery）maynotbesufficientlydeeptomakecontactwiththeconductiveportionoftheunderlyingILDlayer,thusresultinginanopencircuitintheintegratedcircuitsemiconductordevice.Ontheotherhand,ifthewaferedgeportionisrelativelyoverpolishedresultinginarelativelythinnerILDlayerportion,asubsequentviaetchingprocesscanresultinmetalthinningintheunderlyingconductiveregionalteringelectricalresistances.@#@ThewellknownPrestonequationgenerallyexplainsthepolishingmechanismfordielectriclayers,particularlySiO2containingdielectriclayers.Generallytherateofremovalisproportionaltotheappliedpressure,therelativevelocitybetweenthewaferandthepolishingpadandaproportionalityconstantthattakesintoaccountothervariablessuchasthehardnessofthedielectric,theslurry,andthepolishingpad.@#@OneprocessthatisasyetnotquantitativelyunderstoodistheroleoftheslurryinformingahydrodynamiclayerunderneaththewaferpolishingsurfaceduringCMP.Thedistributionoftheslurrywithrespecttothepolishingsurfacehasreceivedlittleattentioninthepriorart.Forexample,itisknownthatbothmechanicalandchemicalprocessesaccountforpolishingofthesurface.Forexample,chemicalprocessesareknowntodominateonthemicroscaleinremovingmaterialwhilemechanicalprocessesdominateonthemacroscale,forexampleinremovinghighspotsonthewafersurface.Inaddition,theconditionofthepolishingpadaffectsbothchemicalandmechanicalprocesses.@#@Priorartprocesseshaveproposedfeedingtheslurrythroughthepolishingpadtomakethedeliveryoftheslurrytothewaferpolishingsurfacemoreuniform.ThisprocesshasmetwithsomesuccessbuthasproveddifficulttocontrolwithrespecttovaryingpolishingpadsurfacesandtheparticularCMPmachineused.Forexample,theedgeofthewafermaytendtogetahigherorlowersupplyofslurryduetothecomplexrelativemotionofthepolishingpadandthewaferpolishingsurfacewhichmaybemovedatvaryingrate