高效晶体硅太阳电池性能研究报告Word格式.docx
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凝聚态物理
2014年05月
InvestigationofMechanicalPropertyforSilverPaste-SiContactofHighEfficientCrystallineSiliconSolarCells
Athesissubmittedto
Xi’anJiaotongUniversity
inpartialfulfillmentoftherequirements
forthedegreeof
MasterofScience
By
ChuankeChen
Supervisor:
AssociateProf.HongYang
(CondensedMatterPhysics)
May2014
论文题目:
摘要
对于晶体硅太阳电池而言,其前银电极和硅基底之间的力学性能对光伏组件的长期可靠性和使用寿命起着至关重要的作用。
银硅接触的性能衰减是导致晶体硅太阳电池及其组件失效的主要原因之一。
加之太阳电池的开展趋势正朝着高阻细栅的方向开展,这就要求太阳电池的前银电极栅线的宽度不断减小,即银硅接触面积减小,以到达节约银的用量并增加光线利用率的目的。
但是对于目前的太阳电池用银浆来说,随着银栅线的宽度减小,银硅接触的力学性能会急剧退化。
如何在保证银硅接触的力学性能的前提下,降低银浆的使用量,节省生产本钱,实现光伏发电平价化,并提高太阳电池及其组件的使用寿命和可靠性是当下光伏行业一个迫切亟待解决的问题。
本文从理论和实验两个方面着手,深入系统地研究了高效晶体硅太阳电池前电极银硅接触构造的力学性能。
理论方面,我们基于构造力学首次建立了银硅接触构造的剪切力与栅线宽度之间的数学模型,并用剪切实验对该模型进展了验证;
实验方面,我们研究了太阳电池生产工艺对银硅接触构造附着力的影响,银硅接触界面微观构造对晶体硅太阳电池银硅接触附着力的影响,以及银硅接触构造附着力与太阳电池及其组件功率衰减的关系。
通过研究我们发现,晶体硅太阳电池的银硅接触构造的力学性能与栅线的宽度成线性关系,与电池的生产制造工艺以及所选用的材料性能密切相关;
同时银厚膜的致密度和银厚膜与硅基底的接触方式对银硅接触构造的力学性能也有重要影响;
银硅接触构造的力学性能是影响晶体硅太阳电池及其组件可靠性的关键因素之一,银硅接触力学性能差的组件在户外运行时,其功率衰减程度更大,更容易失效。
这些研究成果,为未来太阳电池技术改良以及导电银浆的开展奠定了理论和实验根底。
关键词:
太阳电池;
银硅接触;
附着力;
可靠性
论文类型:
应用研究
Title:
Descipline:
CondensedMatterPhysics
Applicant:
ChuankeChen
AssociateProf.HongYang
ABSTRACT
Forcrystallinesiliconsolarcells,themechanicalpropertiesoffrontmetallizationarecriticaltosolarmodules’reliabilityandlong-lifetime.Themechanicalpropertiesdegradationisoneofmajorfactorswhichcausesolarcellsandsolarmodulestofailureaheadoftime.Thedevelopmentdirectionofcrystallinesiliconsolarcellsisforwardtohighemitterresistanceandpactfingers,thismeansthewidthoffingersneedstobemorefinetomeetthetargetsofcostsavingandincreasingutilizationrateoflight.However,tothesilverpasteusedforphotovoltaic,themechanicalpropertiesdegradationsseriouslywiththewidthsoffingerfiner.Inphotovoltaic,theurgentproblemisnotonlyneedstopromotethemechanicalpropertiesofAg-Sicontact,butalsoneedstocutthecostandfurtherdevelopthereliabilityandlonglifetimeofsolarcellsandsolarmodules.
Therefore,thispaperinvestigatesthemechanicalpropertiesofAg-Sicontactforcrystallinesiliconsolarcellssystemfromtheoryandexperiment.Firstly,basedonStructuralMechanicsandMechanicalsofMaterials,wehavebuiltthemathematicalmodelofAg-Sicontactbetweentheshearforceandbus-barwidth,andwhichwasverifiedbysheartest.Secondly,theeffectsofprocessoninterfacialadhesionstrengthofAg-Siforcrystallinesiliconsolarcells,theimpactsofinterfacemicrostructureonadhesionforcebetweensilverpasteandsiliconsolarcells’emitter,andtheeffectsofbindingforcebetweensilverpasteandsilicononpowerdegradationofcrystallinesiliconsolarmoduleswereinvestigatedrespectively.
Throughaboveinvestigationswehavegottensomeconclusionsaboutthemechanicalpropertiesofcrystallinesiliconsolarcellasfollows:
theshearstrengthofAg-Sicontactshowsalinearrelationshipwiththebus-barwidth,andalsoshowsclosedrelationtoprocessandmaterialsused;
thepositionofsilverpastewouldaffecttheinterfacemicrostructureandthemechanicalpropertyofsilverthick-filmandAg/Sicontactinterface;
Thebindingforcereductionbetweensilverpasteandsiliconleadstopowerdegradationduringsubsequentqualificationtestsoroutdoorusing.Theseresultslaidthefoundationforstudyingthemechanicalpropertiesoffrontcontactmetallizationforscreen-printedcrystallinesiliconsolarcells.
KEYWORDS:
Solarcells;
Ag-Sicontact;
Adhesion;
Reliability
TYPEOFTHESIS:
ApplicationResearch
声明
CONTENTS
1Introduction1
1.1DevelopmentandPresentSituationofSolarCell1
1.2MainResearchWorkandBackground4
1.2.1Background4
1.2.2ContentsandMeaning5
2PrincipleandCharacterizationofCrystallineSiliconSolarCells7
2.1PrincipleofCrystallineSiliconSolarCells7
2.2SolarCellsClassification8
2.3StructureofCrystallineSiliconSolarCells8
2.4CharacterizationParameters9
2.4.1Photocurrent9
2.4.2Photovoltage11
2.4.3EquivalentCircuit12
2.4.4PowerOutput12
2.4.5FillFactor12
2.4.6EfficiencyofSolarCell12
3TheoreticalResearchonAg-SiContactforCrystallineSiliconSolarCell—ShearForceMathmaticModelforAg-SiContact13
3.1TheoreticalDerivation13
3.2ExperimentVerification18
3.3ResultsandDiscussion19
3.4BriefSummary20
4ExperimentalResearchonAg-SiContactforCrystallineSiliconSolarCell21
4.1ProcessofSolarCellProduction21
4.1.1WafersDetection21
4.1.2CleaningandTexturing22
4.1.3Doping23
4.1.4EtchingPerimeter24
4.1.5EliminatingPSG24