l6599设计表格表格文件下载.xls
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summarizesthecalculationresultsandshowsthebasicelectricalschematicItisrecommendedtousetheworkbookstartingfromthefirstsheetandproceedingfollowingtheordershown.Ineachworksheet,cyancellsrefertodatathatmustbeenteredbytheUser,yellowcellsrefertocalculationresultswhichneedsafurthercheckorastandardvaluechoice.ELECTRICALSPECIFICATIONS:
enterdataintocyancellsConverterspecification:
NOTES:
NominalsupplyBUSvoltage:
V.dc.nom=390(V)wheretheoperatingfrequencyequalstheresonantfrequencyf.sw=f.rMinimumsupplyBUSvoltage:
V.dc.min=320(V)dependingonthehold-upcapabilityofthePFCpre-regulatorMaximumsupplyBUSvoltageV.dc.max=420(V)dependingontheOVPlevelofthePFCpre-regulatorNominaloutputvoltage:
V.out=200(V)outputrequirementsMaximumoutputpower:
P.out=400(W)Outputvoltageripple:
Vout=100(mV)Expectedefficiency:
%=97.5%onlyresonantconvertercircuitPre-designchoices:
Minimumoperatingfrequency:
f.sw.min=75(kHz)suggestion:
1:
2rangeMaximumoperatingfrequency:
f.sw.max=150(kHz)Straycapacitanceathalf-bridgenode:
C.stray=120(pF)foreseenvaluewithoutC.osscontributionSecondaryoutputrectifierconfiguration:
K.conf=2K.conf=1incaseoffullbridgerectificationK.conf=2incaseoftransformercentertapwindingHALF-BRIDGEMOSFETSELECTION:
enterdataintocyancellsHalf-bridgemosfetstress:
I.MOS=2.014(Arms)estimatedmaxoperatingdraincurrentV.DS=420(V)maxoperatingdrain-sourcevoltageV.(br).DSS=500(V)suggestedbreakdownvoltageR.(DS)on=0.300()suggestedONresistanceat25CSelectthesuitablemosfetfromYourdata-baseandwritetherequiredparametervaluesbelow:
Mosfettype:
STP14NK50ZFPFillwithyourselectedpartnumberChosenmosfetparameters:
R.DS.on=0.35()ONresistanceat25C(frommosfetdata-sheet)k.mos=1.6TemperaturemultiplierforRds.ONat100CC.oss=90(pF)EffectivedraincapacitanceOUTPUTDIODESELECTION:
Outputdiodestress:
I.DIODE=1.571(Arms)estimatedmaxdiodermscurrentI.D.avg=1.000(Aavg)estimatedmaxdiodeavgcurrentV.RRM=480(V)minimumsuggestedbreakdownvoltage(with20%derating)SelectthesuitablediodefromYourdata-baseandwritetherequiredparametervaluesbelow:
Diodetype:
STTH8L06FPFillwithyourselectedpartnumberChosendiodeparameters:
V.F=1.06(V)diodeforwarddropthreshold(fromdiodedata-sheet)R.d=36(m)diodedynamicresistanceI.R=240(A)diodeleakagecurrentPowerlosses:
Maxtotalpowerdissipation:
P.diss.tot=10.256(W)forexpectedefficiencyMosfetpowerdissipation:
P.d.mos=4.578(W)(totaldissipationofhalf-bridgemosfets)Diodepowerdissipation:
P.d.rect=2.394(W)(totaldissipationofoutputdiodes)OUTPUTCAPACITORSELECTION:
Outputvoltageripple:
Vout=100(mV)MaxcapacitorESR:
ESR.max=32(m)Capacitorripplecurrent:
I.o.ac.max=0.967(A)HALF-BRIDGERESONANTCONVERTERDESIGN:
enterdataintocyancellsParameterschoice:
Resonancefrequency:
f.r=118(kHz)selectavaluebetweenf.sw.minandf.sw.msxMarginfactorforQ.minvalue:
k.marg=0.94startingvalueintherange:
0.80-0.95Calculations:
Idealtransformertransferratio:
n=0.970Maximumrequiredgain:
M.max=1.219Minimumrequiredgain:
M.min=0.929Maxnormalizedfrequency:
f.n.max=1.271ACequivalentresistance:
R.ac=76.649()Inductanceratio(L.r/L.m):
=0.202Minimumqualityfactorvalue:
Q.zvs=0.441Minoperatingfrequency:
f.sw.Min=75.063(kHz)Incasethecalculatedminfrequencyf.sw.MinislowerMinimumnormalizedfrequency:
f.n.min=0.636orhigherthantheexpectedfrequencyf.sw.min,pleaseincreaseordecreasetheresonancefrequencyf.r,unlessPleasecheck=f.sw.min=75(kHz)youaccepttheobtainedminimumswitchingfrequencyvalue.Calculatedresonantcapacitorvalue:
C.r=39.930(nF)Pleaseusethehigherstandardvalue:
C.r.std=40(nF)Transformerturnratio:
N.T=1.063Transformerleakageinductance:
L.r=45.000(H)Transformerprimaryinductance:
L.p=268.000(H)PrimarysidermscurrentI.prim.rms=2.859(A)SecondarysidermscurrentI.sec.rms=1.571(A)Pleasecheck=X=0.088Incasetherelationship:
TgXisnotverified,Tg=0.094choosealowervaluefork.marg,anditeratetheprocess.L6599PERIPHERALCOMPONENTSDESIGN:
enterdataintocyancellsMinimumoperatingfrequency:
f.sw.Min=75.06(kHz)FromresonantstagecalculationsheetMaximumoperatingfrequency:
f.sw.max=150.00(kHz)FromelectricalspecsheetStart-upfrequency:
f.start=300(kHz