半导体中英对照.docx

1、半导体中英对照倒序浏览0| Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor. 受主 - 一种用来在半导体中形成空穴的元素，比如硼、铟和镓。受主原子必须比半导体元素少一价电子 Alignment Precision - Displacement of patte

2、rns that occurs during the photolithography process. . u! F. W ! b# j4 q 套准精度 - 在光刻工艺中转移图形的精度。 2 v I; S4 U, T* r d9 H3 b! c Anisotropic - A process of etching that has very little or no undercutting , i( N: Z7 u; 3 z 各向异性 - 在蚀刻过程中，只做少量或不做侧向凹刻。 : 3 v& P1 s1 3 z. ; ? Area Contamination - Any foreign p

3、articles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the result of stains, fingerprints, water spots, etc. + 7 c* p x H3 B0 m; r 沾污区域 - 任何在晶圆片表面的外来粒子或物质。由沾污、手印和水滴产生的污染。 ) 6 f: K* N7 I8 r; W$ t m* P Azimuth, in Ellipsometry - The angle meas

4、ured between the plane of incidence and the major axis of the ellipse. 椭圆方位角 - 测量入射面和主晶轴之间的角度。 Backside - The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use back surface.) 背面 - 晶圆片的底部表面。（注：不推荐该术语，建议使用“背部表面”） 7 h4 p; ? D! j0 H( I0 X- x Base Silicon Layer - The sili

5、con wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer. 底部硅层 - 在绝缘层下部的晶圆片，是顶部硅层的基础。 Bipolar - Transistors that are able to use both holes and electrons as charge carriers. 双极晶体管 - 能够采用空穴和电子传导电荷的晶体管。 - ? x5 Q5 x& d! A* P% y Bonded Wafers - Two si

6、licon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer. ; o! k) , + i( V# Z- Y 绑定晶圆片 - 两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。 Bonding Interface - The area where the bonding of two wafers occurs. 绑定面 - 两个晶圆片结合的接触区。 : c& H! o, # 4 Q Buried Layer - A path of low resistance

7、for a current moving in a device. Many of these dopants are antimony and arsenic. 0 / J% K% G, A, B6 b, t, c. I* w 埋层 - 为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。 Buried Oxide Layer (BOX) - The layer that insulates between the two wafers. 氧化埋层(BOX) - 在两个晶圆片间的绝缘层。 Carrier - Valence holes and conduction electrons tha

8、t are capable of carrying a charge through a solid surface in a silicon wafer. 6 p% i. k S- N2 I 载流子 - 晶圆片中用来传导电流的空穴或电子。 . k1 Y# W# % ?5 v5 Chemical-Mechanical Polish (CMP) - A process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during th

9、e fabrication process. 化学-机械抛光(CMP) - 平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。 Chuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand. - k7 v: H1 s q, t$ t0 u 卡盘痕迹 - 在晶圆片任意表面发现的由机械手、卡盘或托盘造成的痕迹。 Cleavage Plane - A fracture plane that is pre

10、ferred. # d; r7 3 x8 / u& 6 n 解理面 - 破裂面 * N+ r& s$ R1 t0 J. w Crack - A mark found on a wafer that is greater than 0.25 mm in length. & B A3 c E6 j; u 裂纹 - 长度大于0.25毫米的晶圆片表面微痕。 ( z( c2 T( y4 : | Crater - Visible under diffused illumination, a surface imperfection on a wafer that can be distinguished

11、individually. 4 D# R Z; e9 p6 - ? 微坑 - 在扩散照明下可见的，晶圆片表面可区分的缺陷。 Conductivity (electrical) - A measurement of how easily charge carriers can flow throughout a material. 传导性（电学方面） - 一种关于载流子通过物质难易度的测量指标 。 7 T x4 k p8 j7 R/ e Conductivity Type - The type of charge carriers in a wafer, such as “N-type” and

12、 “P-type”. t* V4 J: / , W0 e+ L, L 导电类型 - 晶圆片中载流子的类型，N型和P型。 Contaminant, Particulate (see light point defect) 污染微粒 （参见光点缺陷） / E1 & F# _) O1 ; t- C% V8 J, I Contamination Area - An area that contains particles that can negatively affect the characteristics of a silicon wafer. * 1 |7 i # 4 h& j. k 沾污区

13、域 - 部分晶圆片区域被颗粒沾污，造成不利特性影响。 Contamination Particulate - Particles found on the surface of a silicon wafer. 沾污颗粒 - 晶圆片表面上的颗粒。 ( o8 J# d+ E. V* u Crystal Defect - Parts of the crystal that contain vacancies and dislocations that can have an impact on a circuits electrical performance. 晶体缺陷 - 部分晶体包含的、会影

14、响电路性能的空隙和层错。 Crystal Indices (see Miller indices) l6 a 3 ; q9 G& g0 s7 W 晶体指数 （参见米勒指数） . . H1 U/ j e% r Depletion Layer - A region on a wafer that contains an electrical field that sweeps out charge carriers. 耗尽层 - 晶圆片上的电场区域，此区域排除载流子。 Dimple - A concave depression found on the surface of a wafer tha

15、t is visible to the eye under the correct lighting conditions. ! Y+ C5 c( I/ F$ L: Y( v 表面起伏 - 在合适的光线下通过肉眼可以发现的晶圆片表面凹陷。 8 f& u7 u) Y6 n8 M$ A U; y Donor - A contaminate that has donated extra “free” electrons, thus making a wafer “N-Type”. . w/ n5 _+ C8 T* ?( P 施主 - 可提供“自由”电子的搀杂物，使晶圆片呈现为N型。 M, A% F! - U! x9 Z4 m Dopant - An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements. 搀杂剂 - 可以为传导过程提供电子或空穴的元素，此元素可以改变传导特