晶体管本底数据.docx

1、晶体管本底数据AbstractThere are numerous methods for measuring thetemperature of an operating semiconductor device.测量工作中的半导体器件的温度又很多方法， Themethods can be broadly placed into three generic categories:electrical, optical, and physically contacting.这些方法可以归纳为三种：电学方法，光学方法，物理参量关联的方法。 Thefundamentals underlying e

2、ach of the categories are discussed,and a review of the variety of techniques within each categoryis given. 现在已经讨论过各种方法的原理并且给出了一个总结。Some of the advantages and disadvantages as wellas the spatial, time, and temperature resolution are alsoprovided.而且包含与空间，时间，温度分辨率有关的一些优点和缺点Keywords关键词Electrical, measu

3、rements, optical, semiconductor,temperature电学方法，测量，光学方法，半导体，温度1. Introduction引言Operating temperature has important consequences forthe performance and reliability of semiconductor devices. 工作温度对于半导体器件的性能和稳定性有决定性的意义。例如：随着温度的升高，微处理器的运行速度和最大工作频率大幅下降，Forinstance, the speed, or maximum operating frequenc

4、y, of amicroprocessor typically decreases as the temperatureincreases, and the gain or transconductance of a transistor mayeither increase or decrease with increasing temperature,depending upon the device type and operating conditions. 晶体管的跨导也会随着温度升高而下降或者降低，而温度取决于器件的类型和工作环境。 Itis also commonly assum

5、ed that the safety margin or reliabilityof a semiconductor device decreases as the temperatureincreases. 一般认为，器件的安全工作范围和可靠性会随半导体器件温度升高而下降。 It is not surprising, then, that a significant amountof effort goes into accurately measuring the temperature atwhich devices operate.所以应该在器件温度测量的方面投入大量的努力。The t

6、opic of measuring the temperature of semiconductordevices is in many ways mature in that people have beentrying to measure the temperature of semiconductor devicesfrom the time of the invention of the transistor. 自从半导体器件发明以来，测量温度就是人们考虑的主题。It remains,though, a very relevant topic in that people are s

7、till inventingnew methods to address temperature measurement现在仍然如此，而且人们正在研究新方法来测量温度，这些都是前人没有解决的，现在在这方面更加引起人们的关注。 issues thatpreviously had no solutions and because thermal managementand temperature control are probably more of a concern todaythan ever before 1-3. Moores law dictates that devices and

8、circuits will continue to shrink in size, be packed moredensely, operate at higher switching speeds, and dissipatemore power overall 4. 摩尔定律预言 器件和电路会继续减小尺寸，并且会有更快的运行速度，和更大的功率。The major temperature measurementchallenges associated with these advances includeimprovements in the spatial and temporal re

9、solution of themeasurements.主要的温度测量方法面临以下的问题，尺寸和瞬时测量的发展。The act of measuring the temperature is in reality themeasurement of some physical phenomena which itself isaffected or changed by temperature. 温度的测量实际上是测量一下与温度有关的物理量的变化。The physical phenomenaby which the temperature of a device makes itself kn

10、own aremany and varied, and thus a wide range of methods have beenemployed for measuring and predicting the temperature atwhich devices operate. 随着温度变化而变化的物理量是很多的，所以因此而产生的测量温度的方式也是很多的。For semiconductor devices, the usefultemperature measurement methods can be divided into thebroad, generic categorie

11、s of electrical methods, opticalmethods, and physically contacting methods. 对于半导体器件，主要的温度测量方法可以分为以下主要三类：电学方法，光学方法，物理参量关联方法。 In the first twocategories, the temperature variation of some property of thedevice (an electrical or optical property) is used as athermometer. 前两种办法中，器件一些特性随温度的变动被用为温度标准。In t

12、he third category, a temperature transducer(such as a thermocouple) assumes the temperature of thedevice through intimate contact, and it is the temperature ofthe transducer that is actually measured.第三种方法，是用一个传感器直接测量。It is the intent here to briefly review a number ofcommonly used and useful method

13、s for measuring devicetemperature. 这是对一些有用的测量温度方法的回顾。 The physical basis underlying the measurementwill be presented, some indication of accuracy and spatial andtemporal resolution will be provided, and any specialrequirements or precautions associated with eachmeasurement will be discussed.测量的物理原理会

14、被呈现，瞬时的准确度，和精确度可以达到，一些必要的预防措施会被讨论。2. Generic MethodsThere are many different ways to measure thetemperatures within a semiconductor device or circuit. 测量半导体器件或电路温度的方法有很多种。 Awide variety of electrical and optical phenomena associatedwith semiconductor materials and the devices fabricated fromthem are

15、 temperature sensitive and can be used asthermometers.与半导体材料有关的广泛变化的电学和光学现象都是热敏的，可以被用于测量温度。 Also, there are a variety of temperaturetransducers that when in contact with the device can be usedto indicate the temperature of the device. 同时，有很多的和器件有关联温度传感器可以用于器件温度的检测。 In the following,each of the gener

16、ic types will be described briefly beforelooking later at more specific methods belonging to each type.下面，我们将简要的描述每一类测量方法。2.1. Optical光学的测量方法To use the optical properties as a thermometer, eithernaturally emitted radiation, reflected radiation, or stimulatedemitted radiation is measured. 将光学特性作为一个温度

17、标准，自然的发射辐射，反射辐射，受激辐射都是被测量的项目。 As an example, an opticalbeam (of photons) is focused at a point on the device, and theincident photons will interact with the device in the region ofthe point of focus.当一条光束集中照射在器件表面，光子会与焦点的器件区域发生相互作用。 (If there is no interaction, then the photonswill travel unimpeded

18、through the object, and the object istransparent to the photons - a situation that is ratheruninteresting for our discussion.) （如果不发生辐射，光子会直接通过介质，这种情况不是我们讨论的）One interaction amongseveral that may occur is that some fraction of the incidentphotons will be reflected, or scattered back, from the surfac

19、e(or from a thin surface region) of the object. 一种相互作用是，一小部分光子会被反射，并且分散开。 The actualreflection or scattering results from a complicated interactionbetween the incident photons and the lattice phonons (andmaybe the electrons) of the object being probed.我们会探测实际上的产生与光子和晶格相互作用的散射和反射。 Thedistribution in

20、energy of the lattice phonons is a strongfunction of the local temperature of the object, and the netresult of the photon-phonon interaction is that the relativenumber, and maybe the energy and phase of reflected photons(with respect to the incident photons), changes withtemperature of the object. 晶

21、格原子的能量分布是物质局部温度的强相互作用，可能是反射原子的的能量，随着物质的温度变化。 Clearly, if these changes arecarefully measured, they might be used to infer thetemperature of the probed object in the region of the pointbeing probed. 很明显，如果这种变化被仔细测量，就能够用于物质局部温度的探测。Optical methods can be considered to be non-contacting in the sense tha

22、t only photons interact with thedevice, and the effect on the device operation or itstemperature due to the interaction can usually be neglected.光学测量法可以认为是对器件本身没有任何影响的，应为只有光子与器件本身发生相互作用，影响甚微，可以忽略不计。Spatial resolution of optical methods is determined by the sizeof the optical probe and the region ove

23、r which it interacts withthe device. 光学测量法的空间分辨率取决于光探测器的尺寸大小，和与之发生相互作用的半导体器件面积。The time response is determined ultimately by theresponse time of the optical phenomena to changes intemperature, but also practically by instrumentation response.响应时间取决于光学现象的相应的时间，也取决于仪器的响应时间。Advantages of optical method

24、s include that they can havevery high spatial resolution, can often measure rapidvariations in temperature, and are non-contacting. 光学测量法的优势是可以有很高的分辨率，并且可以测量很快的温度变化，而且对所测系统没有影响。所以器件表面热谱图可以很容易的得出。temperature maps of the surface of a device can usually beeasily made from a matrix of measurements. Disa

25、dvantagesare that one must have optical access to the device, somethingnot usually possible if the device is packaged, and theequipment required is often expensive and difficult to use.光学法的缺点是，光子必须到达期间表面，所以对于封装完成的器件不适用，而且光学测量法所需要的仪器设备很昂贵，这些都导致光学测量法存在很多的限制。2.2. Electrical电学方法Many of the electrical pr

26、operties of semiconductor devicesand circuits can be strong functions of temperature.许多半导体器件的电学特性都是温度的函数。junction forward voltage, threshold voltage, leakage currentand gain, to name but a few, are examples of electricaltemperature sensitive parameters (TSP). 结正向电压阈值电压，漏电流，电导都是与温度有关的特性。measurement o

27、f any of these quantities can also be used toinfer the temperature of an operating semiconductor device5. 对于这些物理量的测量可以用于检测器件的温度。 There are fundamental and conceptual differences,though, between these electrical measurements oftemperature, and the previously described optical probetechniques. 电学测量法和光

28、学测量法有很多的不同之处。Conceptually at least, the optical probe can bemade very small and thus be used to probe the temperature ofa very small, well defined region of the device.原则上，光学检测可以用在很小器件的区域上。 A point-by-point map of the temperature at different positions on thedevice might even be made.各个位置温度点的不同都能够精确

29、的做出来。Electrical methods, though, by their very nature, arelumped, or averaging, methods. 电学方法则不同。 For instance, the forwardvoltage of a pn-junction at a constant current is known to varywith temperature in a predictable way. 例如，pn结电压随着温度会精确的变化。Thus, the forwardvoltage can be used to infer the temper

30、ature of the junctionbut not necessarily the temperature anywhere else in thedevice. 可以用来测量结电压，但是不能准确测量器件其他区域的电压。 In many instances, the device temperature is nearlythe same everywhere; therefore, this is of little consequence.很多情况下，器件温度是均匀的，因此还是有说明意义的。However, in other instances, this is not the ca

31、se. 然而，有些情况下，器件温度分布不均匀，各个区域温度很大不同。 Even thejunction temperature may not be the same everywhere in thejunction. 即使是结温度也有很大不同。 The model used to determine the variation of theforward voltage of a junction with temperature should beconsidered a lumped model in that the distributed nature ofthe electric

32、al and thermal behavior of the junction is lumpedinto a model with a single temperature, single voltage, andsingle current density. 这个决定结电压随温度变化的模型，应该被认为是一个集总模型，在这个模型里，用单电压，单电流，单温度来表示器件电学和热量的行为。Although electrical methods sacrifice some specificity ofthe measured temperature, their advantage is that no specialsample preparation is required because all the necessaryelectrical connect