UniversalBridge模块simulink仿真.docx

1、UniversalBridge模块simulink仿真Universal Bridge - Implement universal power converter with selectabletopologies and power electro nic devices通用电桥-具有可选择的拓扑结构和电力电子设备的通用电源转换器的实现LibraryPower Electr onicsDescripti onpowerThe Universal Bridge block implements a universal three-phaseconverter that consists of

2、up to six power switches connected in a bridge configuration. The type of power switch and converter configuration are selectable from the dialog box. 通用电桥模块可以看作一个通用的三相电源转换器， 由最高六个电源开关连接在 一个桥路中配置。电源开关和转换器配置类型参数在对话框中选择。The Universal Bridge block allows simulation of converters using both naturally co

3、mmutated (or line-commutated) power electronic devices (diodes or thyristors) and forced-commutated devices (GTO, IGBT, MOSFET). 通用电桥模块可以仿真自然换流器(或换线)电力电子器件(二极管或晶闸管) 和强迫换流器件( GTO、IGBT，MOSFET )。The Universal Bridge block is the basic block for building two-level voltage-sourced converters (VSC). 通用电桥模

4、块是建立两级电压源变换器的基本块( VSC)。follows the natural order of commutation:器（二极管或晶闸管） ，编号：按下列顺序：For otherGTO-Diode bridge:GTO-二极管电桥MOSFET-Diode and Ideal Switch bridges:the case of a two-phase diode or thyristor bridge, and for any bridge configuration, the order of commutation is the following: 两相二极管或晶闸管桥的情况下

5、，和任何其他的桥配置，换向顺序如下:Dialog Box and ParametersNumber of bridge armsSet to 1 or 2 to get a single-phase converter (two or four switching devices). Set to 3 to get a three-phase converter connected in Graetz bridge configuration (six switching devices).设置为1或2,得到一个单相转换器(两个或四个开关器件)。设置为3，得到 一个连接在格雷茨电桥中的三相转换

6、器（六开关设备） 。Snubber resistance RsThe snu bber resista nee, in ohms （Q）. Set the Snu bber resista nee Rs parameter to inf to eliminate the snubbers from the model.缓冲电阻，欧姆（Q）。设置缓冲电阻的参数为inf来消除来自模型的缓冲。Snubber eapaeitanee CsThe snubber eapaeitanee, in farads （F）. Set the Snubber eapaeitanee Cs parameter to

7、 0 to eliminate the snubbers, or to inf to get a resistive snubber.缓冲电容，法拉（F）。设置缓冲电容Cs参数为0消除缓冲电路，或INF得到电 阻缓冲。In order to avoid numerieal oseillations when your system is diseretized, you need to speeify Rs and Cs snubber values for diode and thyristor bridges. For foreed-eommutated deviees （GTO, IGB

8、T, or MOSFET）, the bridge operates satisfaetorily with purely resistive snubbers as long as firing pulses are sent to switehing deviees.当系统是离散的，为了避免数值振荡，你需要为二极管和可控硅整流桥指定 RsCS缓冲值。对于强制整流器件（GTO、IGBT、或MOSFET），带纯电阻缓冲器 的电桥达到理想工作状态只要触发脉冲送到开关装置。If firing pulses to foreed-eommutated deviees are bloeked, only

9、 antiparallel diodes operate, and the bridge operates as a diode reetifier.In this eondition appropriate values of Rs and Cs must also be used.如果触发脉冲强迫整流设备关闭，只有反平行二极管工作，并作为一个二极管整 流桥。在这种情况下，Rs和Cs必须设置适当的值。When the system is discretized, use the followi ng formulas to computeapproximate values of Rs an

10、d Cs:当系统是离散的，使用以下公式来计算 Rs和Cs的近似值：CsPCs 里 1000也刃喑出wherePn = nominal power of sin gle or three phase con verter (VA)Pn代表单或三相转换器的标称功率Vn = nomin al li ne-to-l ine AC voltage (Vrms)代表标称线间交流电压f = fun dame ntal freque ncy (Hz)基本频率Ts = sample time (s)抽样时间These Rs and Cs values are derived from the following

11、 two criteria:Rs和Cs的值来自以下两个标准The sn ubber leakage curre nt at fun dame ntal freque ncy is less tha n 0.1%of nominal curre nt whe n power electro nic devices are not con duct ing.当电力电子器件是不导电时，基波频率下的缓冲泄漏电流小于额定电流的 0.1%The RC time constant of snubbers is higher than two times the sampletime Ts.These Rs

12、and Cs values that guarantee numerical stability of the discretized bridge can be different from actual values used in a physical circuit.缓冲电路的 RC 时间常数大于两倍的采样时间的。Rs 和 Cs 的值，保证离散化的桥电桥的数值稳定性可以不同的与物理电路中使 用的实际值。Power electronic deviceSelect the type of power electronic device to use in the bridge. 选择在电桥

13、中使用的电力电子装置的类型。When you select Switching-function based VSC, a switching-function voltage source converter type equivalent model is used, where switches are replaced by two voltage sources on the AC side and a current source on the DC side. This model uses the same firing pulses as for other power el

14、ectronic devices and it correctly represents harmonics normally generated by the bridge.当你选择切换功能的VSC （变压设备），开关功能的电压源整流器型等效模型， 其中开关是由两个交流侧电压源和直流源的电流代替的。 该模型使用与其他电力 电子设备相同的发射脉冲，它正确地反映正常产生的电桥谐波。When you select Average-model based VSC, an average-model type of voltage source converter is used to represe

15、nt the power-electronic switches. Unlike the other power electronic devices, this model uses the reference signals (uref) representing the average voltages generated atthe ABC terminals of the bridge. This model does not represent harmonics. It can be used with larger sample times while preserving t

16、he average voltage dynamics.当你选择基于 VSC 的平均模型、电压源变换器的平均模型类型是用来表示电力 电子开关。不像其他的电力电子设备，这个模型使用的参考信号( Uref )代表在 桥的 ABC 终端产生的平均电压。这个模型不代表谐波。它可以使用更大的样本 时间，而公关 eserving 平均电压动态。See the power_sfavg demo for an example comparing these two models toan Universal Bridge block using IGBT/Diode device. 对两个模型的一种通用桥块采

17、用 IGBT /二极管器件。RonInternal resista nee of the selected device, in ohms ( Q).LonInternal inductance, in henries (H), for the diode or the thyristor device.When the bridge is discretized, the Lon parameter must be set to zero.内部电感，用(H),该二极管或晶闸管装置。当桥梁离散， LON参数必须设置为零。Forward voltage VfThis parameter is a

18、vailable only when the selected Power electronic device is Diodes or Thyristors.此参数仅当选定的电力电子器件是二极管或晶闸管可用。Forward voltage, in volts (V), across the device when it is conducting.正向电压，在伏(V),穿过设备时，它正在进行。Forward voltages Device Vf, Diode VfdThis parameter is available when the selected Power electronic d

19、evice is GTO/Diodes or IGBT/Diodes.该参数可选择的电力电子装置是当 GTO或IGBT /二极管/二极管。Forward voltages, in volts (V), of the forced-commutated devices (GTO, MOSFET, or IGBT) and of the antiparallel diodes.Tf (s) Tt (s)Fall time Tf and tail time Tt, in seconds (s), for the GTO or the IGBT devices.下降时间tf和尾时间 口，秒(s),对G

20、TO或IGBT器件来说MeasurementsSelect Device voltages to measure the voltages across the six power electronic device terminals.选择设备电压测量的六个电力电子设备终端的电压。Select Device currents to measure the currents flowing through the sixpower electronic devices. If antiparallel diodes are used, the measured current is the t

21、otal current in the forced-commutated device (GTO, MOSFET, or IGBT) and in the antiparallel diode. A positive current therefore indicates a current flowing in the forced-commutated device and a negative current indicates a current flowing in the diode. If sn ubber devices are defi ned, the measured

22、curre nts are the ones flow ingthrough the power electr onic devices only.选择设备电流来测量流经六个电力电子设备的电流。 如果用反并联二极管，测量 电流在强迫换相开发的总电流冰（GTO, MOSFET，或IGBT）在反平行二极管。 正电流因此显示当前在强制换向装置和负电流表示电流二极管。 如果定义了缓冲装置，测量电流的流经电力电子器件只。Select UAB UBC UCA UDC voltages to measure the termi nal voltages （ACand DC） of the Uni versa

23、l Bridge block.选择UAB UBC UCA UDC 电压测量端电压（AC DC）的通用桥块。Select All voltages and currents to measure all voltages and currents defi ned for the Uni versal Bridge block.选择所有的电压和电流来测量所有的电压和电流定义为通用桥块。Place a Multimeter block in your model to display the selected measurements during the simulation. In the A

24、vailable Measurementsmenu of the Multimeter block, the measurement is identified by a label followed by the block n ame.将万用表的块中的模型显示在选定的测量仿真。在万用表的块可用的测量菜单，测量的标签标识其次是块名。Measureme ntLabelDeviceUsw1:,voltagesUsw2:,Usw3:,Usw4:,Usw5:,Usw6:Measureme ntLabelBranch curre ntIsw1:, Isw2:, Isw3:, Isw4:, Isw5:,

25、 Isw6:Termi nalUab:, Ubc:, Uca:, Udc:voltagesIn puts and OutputsThe gate in put for the con trolled switch devices. The pulse orderi ng inthe vector of the gate signals corresponds to the switch number in dicated in the six circuits show n in the Descripti on sect ion. For the diode and thyristor br

26、idges, the pulse ordering corresponds to thenatural order of commutati on. For all other forced-commutated switches, pulses are sent to upper and lower switches of phases A, B, and C.用于控制开关器件的栅极输入。在栅极信号的矢量中的脉冲顺序对应于在描述部 分中显示的六个电路中表示的开关数。 对于二极管和晶闸管桥，脉冲顺序对应于换向的自然顺序。对于所有其他强制换向开关，脉冲发送到上下开关相 A、B和C1 Topolo

27、gPulse Vector ofyIn put gone armQ1,Q2twoQ1,Q2,Q3,Q4armsLTopologPulse Vector ofyIn put gITthreeQ1,Q2,Q3,Q4,Q5,armsQ6ExampleThe power_bridges demo illustrates the use of two Uni versal Bridge blocks inan ac/dc/ac con verter con sist ing of a rectifier feedi ng an IGBT inv erterthrough a DC link. The i

28、nverter is pulse-width modulated (PWM) to produce a three-phase 50 Hz sinusoidal voltage to the load. In this example the inv erter chopp ing freque ncy is 2000 Hz.power_bridges 案例-在交流/直流/交流转换器包括一个整流器供给IGBT逆 变器通过直流环节两通用桥式块的使用。该逆变器是脉冲宽度国防部调节 (PWM )产生三相50赫兹的正弦电压的负载。在这个例子中，逆变器的斩波频率为2000赫兹。The IGBT in v

29、erter is con trolled with a PI regulator in order to mai ntain a 1 pu voltage (380 Vrms, 50 Hz) at the load termi nals.IGBT逆变器是一个以PI调节器保持1的PU电压控制(380 Vrms，50 Hz )的终端负载。A Multimeter block is used to observe commutati on of curre nts betwee n diodes 1 and 3 in the diode bridge and betwee n IGBT/Diodes

30、 switches 1and 2 in the IGBT bridge.万用表块是用来观察二极管1和3之间的电流换向二极管桥和IGBT /二极管开关1和2在IGBT桥之间in verter output,and load on Scope1. The harm onics gen erated by thein verter around multiplesof 2 kHz are filtered by the LC filter. Asexpected the peak value of the load voltage is 537 V (380 V RMS).启动仿真。经过约40毫秒的

31、瞬态期间，该系统达到一个稳定的状态。观察在直 流母线电压波形和负载，逆变器输出，一级。谐波的产生由逆变器的2千赫的倍 数的倍数的滤波器的LC滤波器。正如预期的负载电压的峰值为 537 V(380 V的有效值)。In steady state the mea n value of the modulati on in dex is m = 0.8, andthe mean value of the DC voltage is 778 V . The fundamental componentof 50 Hz voltage buried in the chopped inverter voltage is therefore 在稳态的调制指数的平均值为 M = 0.8 ，和直流电压的平均值为 778 V 。50 赫 兹的电压埋在斩波逆变器电压的基本组成部分是Vab = 778 V * 0.612 * 0.80 = 381 V RMSObserve diode currents on trace 1 of Scope2, showing commutationfrom diode 1 to diode 3. Also observe on trace 2 currents in switches 1 and 2 of th