H2V3O8与石墨烯复合材料应用到锂离子电池.docx
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H2V3O8与石墨烯复合材料应用到锂离子电池
DOI:
10.1002/cplu.201300331
SynthesisofH2V3O8/ReducedGrapheneOxideCompositeasaPromisingCathodeMaterialforLithium-IonBatteries
KaiZhu,[a]XiaoYan,[a]YongquanZhang,[a]YuhuiWang,[a]AnyuSu,[a]XiaofeiBie,[a]DongZhang,[a]FeiDu,[a]ChunzhongWang,[a,b]GangChen,[a,b]andYingjinWei*[a]
Introduction
Inrecentyears,electricitygenerationfromwindandsolarenergyhasimprovedgreatlywithbecauseofthecontributionsmadebyglobalscientists.[1]Inaddition,hybridelectricvehicles(HEVshavebeenrecognizedasreplacementsforfuelvehiclesinthenearfuturetoreducefossilfuelconsumptionandCO2emissions.Allthesegreen-energytechniquesneedtobesup-portedwithlarge-scaleenergy-storagedevices.Itisgenerallyacceptedthatlithium-ionbatteriesarethemostsuitableenergy-storagesystemsamongthevariouspossibilities.[2,3]However,itisdifficultforthetraditionalLiCoO2cathodetomeettheincreasingdemandsoflarge-scalelithium-ionbatter-iesintheaspectsofenergy/powerdensities,safety,andprice.[4,5]Therefore,thesearchfornewcathodematerialshasbecomeaseriousissueforthenextgenerationoflithium-ionbatteries.
VanadiumoxidessuchasV2O5,VO2,V2O5·nH2Oxerogel,b-AgVO3,andLiV3O8,withtypicalopen-layeredstructures,allowtheintercalationofguestmoleculesorcationsintothelayers.[6,7]Inlithium-ionbatteries,theseopen-layeredstructuresoffermuchhigherspecificenergiesthanmanyothercathodematerialssuchasLiCoO2andLiFePO4.Anothervanadiumoxide,H2V3O8,hasbeenreportedasapromisingcathodema-terialsince2006.[8]Inrecentyears,severalattemptshavebeen
madetoprepareH2V3O8nanomaterialstoimproveitselectro-chemicalproperties.[8–12]IthasbeenreportedthatH2V3O8nanobeltsexhibitaveryhighinitialdischargecapacityof373mAhgÀ1.[10]However,thecyclelifeandratecapabilityofthematerialaregreatlyrestrictedbecauseofitslargeirreversi-blecapacityandlowelectronicconductivity.[9]Theelectronicconductivitiesofelectrodematerialscanbeimprovedthroughtheircombinationwithhighlyconductivecarbonaceousmate-rials.[13,14]Recently,compositeelectrodesthatinterconnectnanostructuredelectrodematerialswithgraphenehaveat-tractedmuchattention.[15]Ingeneral,thegrapheneinthecompositeelectrodescanactbothasconductivechannelsandasanelasticbuffertoaccommodatethevolumechangethatoccursduringrepeatedlithiumuptakeandremoval,simultane-ouslypreventingtheaggregationofnanoparticlesandthecrackingorcrumblingoftheelectrodematerials.[15–18]There-fore,itseemstobeanidealreinforcingcomponentforcompo-siteelectrodes.Manygraphene-basedelectrodematerialssuchasV2O5/graphene,[19]V2O5·nH2Oxerogel/graphene,[20]TiO2/gra-phene,[21]SnO2/graphene,[22]Co3O4/graphene,[23]andFe3O4/gra-phene[24]havebeenreportedsofar,allofwhichshowedim-provedelectrochemicalpropertieswithrespecttotheirpristinecounterparts.However,tothebestofourknowledge,nonano-structuredH2V3O8/graphenecompositematerialhasyetbeenreported.
Herein,aH2V3O8/reducedgrapheneoxide(RGOcompositecathodewasfabricatedthroughasimpleapproach,asillustrat-edinFigure1a.GrapheneoxidespreparedthroughamodifiedHummersmethodweremixedwithHVO4formedfromthere-actionofV2O5andH2O2.Underhydrothermalconditions,thecompositesself-assembledintoH2V3O8/RGOnanostructures,inwhichtheelectrontransportthroughtheH2V3O8nanowireswasimprovedowingtothepresenceofthehighly
conductive
[a]K.Zhu,X.Yan,Y.Zhang,Y.Wang,A.Su,Dr.X.Bie,Dr.D.Zhang,Dr.F.Du,
Prof.Dr.C.Wang,Prof.Dr.G.Chen,Prof.Dr.Y.Wei
KeyLaboratoryofPhysicsandTechnologyforAdvanceBatteriesMinistryofEducation,CollegeofPhysics
JilinUniversity,Changchun130012(P.R.ChinaFax:
(+86431-85155126E-mail:
yjwei@[b]Prof.Dr.C.Wang,Prof.Dr.G.Chen
StateKeyLaboratoryofSurperhardMaterialsJilinUniversity,Changchun130012(P.R.China
CHEMPLUSCHEMFULL
PAPERS
RGOnanosheets(Figure1b.Moreover,RGOsuppressedthestructuraldegradationofH2V3O8duringcharge/discharge,im-provingtheelectrochemicalperformanceofthematerialsignif-icantly.
ResultsandDiscussionThephaseandcompositionoftheas-obtainedH2V3O8and
H2V3O8/RGOproductswereanalyzedbyXRDasdepictedin
Figure2.AlltheXRDpeakscanbeindexedreadilytotheor-thorhombiccrystallinephaseofH2V3O8(spacegroup:
Pnam.[25]
Nocharacteristicpeaksfromimpuritiesofothervanadium
oxidesaredetected,whichindicatesthattheproductsconsist
ofapureH2V3O8phase.Thecalculatedlatticeparametersof
theproductsarea=9.373(3,b=16.939(7,c=3.649(6for
thepristinesample,anda=9.353(1,b=16.932(0,c=3.646(4fortheH2V3O8/RGOcomposite,whichareingoodagreementwithpreviouslyreportedvalues(JCPDS,No.85-2401.Theslightdifferencesinthelatticeparametersmaybecausedbydifferenthydrothermalconditionswith/withouttheadditionofgrapheneoxidesolution.Inaddition,asmalldif-fractionpeakcanbeobservedat26.58forH2V3O8/RGO,whichisabsentforthepristinematerial.Thisadditionalpeakcanbeindexedtothedisordered002stackinglayersofRGO,[19,26]indi-catingthatthecompositeisfabricatedsuccessfullythroughthepresentsyntheticroute.ForthedeterminationoftheexactamountofRGO,thermogravimetricanalysis(TGAwasper-formedonH2V3O8andtheH2V3O8/RGOcomposite(Figure3.
ForthepristineH2V3O8,theweightlossof4.4wt%before6008CiscausedbythedecompositionofH2V3O8.Alarger
weightlossof10.7wt%isobservedforH2V3O8/RGO,which
maybeattributedtothecombustionofRGOtogetherwiththedecompositionofH2V3O8.Onthebasisoftheseresults,themasscontentofRGOintheH2V3O8/RGOcompositeisestimat-edtobe6.3wt%.Figure4a,bshowsSEMimagesoftheH2V3O8andH2V3O8/RGOproducts.Thepristinesampleconsistsofalargenumberofuniformnanowireswithahighaspectratio:
50–200nminwidthandseveralmicrometersinlength.FromtheSEMimageofH2V3O8/RGO,itisapparentthattheH2V3O8nano-wiresaredispersedontheRGOlayer.Thegrapheneoxides,withabundantfunctionalgroupssuchashy-droxyl,carboxyl,andcarbonylgroups,attacheasilyontothesurfaceofH2V3O8andareconvertedtore-ducedgrapheneoxidesduringhydrothermaltreat-ment.Inthemeantime,theH2V3O8nanowireshelppreventtheRGOfromunitinginthereductionpro-cess.ThisnanoarchitecturedwrappinglayerofRGOsheetsformedontheH2V3O8surfacecanactasanelectronicconductiveskin.Forfurthercharacteriza-tionofthemicrostructureoftheH2V3O8/RGOcompo-site,TEMwasperformedasshowninFigure4c.ThisshowsclearlythattheH2V3O8nanowiresareanch-oredintimatelyontheRGOsheets.Inthiscase,itisanticipatedthatoncetheelectronsarriveat
RGOFigure1.aSchematicofthesynthesisroutefortheH2V3O8andH2V3O8/RGOmaterials,andbtheidealelectrontransportationpathwayintheH2V3O8/RGO
composite.
Figure2.XRDpatternsofpristineH2V3O8andtheH2V3O8/RGOcompositecomparedwith
thestandardXRDpatternforH2V3O8
(PDF#85-2401.
Figure3.TGAcurvesofpureH2V3O8andtheH2V3O8/RGOcomposite.
theycantransferquicklytotheH2V3O8nanowires.Thus,anim-provedelectricalconductivityofthecompositewouldbeex-pected.Thehigh-resolutionTEMimage(Figure4dexhibitsalatticefringecorrespondingtoad-spacingof0.33nm,whichisinagreementwiththed101spacingofH2V3O8.ThelocalstructuresofthematerialswerestudiedfurtherthroughRamanscatteringexperiments,asshowninFigure5,togetherwiththatofpuregrapheneoxide.NotethattheRamanpatternsofH2V3O8/RGOandgrapheneoxidearemulti-pliedbytenbecauseoftheirratherweakpeakintensities.ThebasicstructuralunitsofH2V3O8arecomposedofVO6octahedraandVO5trigonalbipyramids,whichformtheV3O8layersbysharingedges.[11]TheRamanspectraofH2V3O8canbeana-lyzedintermsofinternalandex-ternalvibrations(similarlytothoseofmostvanadiumoxides.Theinternalmodescanbede-scribedasstretchingandbend-ingvibrationsoftheVÀObonds.Thesevibrationsgiverisetothehigh-frequencyRamanbandsabove200cmÀ1.TheexternalmodescanbeviewedasrelativemotionsoftheV3O8layers,whicharelocatedatlowfre-quenciesbelow200cmÀ1.TheinternalandexternalvibrationsofpristineH2V3O8andH2V3O8/RGOappearatthesameposi-tionswithinanerrorof2cmÀ1,indicatingthattheRGOinthecompositedoesnotinfluencethelocalstructureofH2V3O8.TherearetwoprominentRamanpeaksat1330cmÀ1and
1601cmÀ1
fortheH2V3O8/RGO
composite,whichareabsentforthepristineH2V3O8.Thesead-ditionalpeakscorrespondtotheDandGbandsofRGO.[24]The
intensityratiooftheDtoGbands(ID/IGisameasureofdisor-derincarbon-basedmaterials.TheID/IGvalueofgrapheneoxideiscalculatedtobe0.86.Afterthereductionofgrapheneoxide,defectsintheresultantRGOincreaseowingtofragmen-tationalongthereactivesite,alargernumberofedges,andsoon.ThisresultsinbroaderDandGbands,andtheID/IGratioof
RGOincreasesto1.15.Inaddition,thereisadistinctivepeakat876cmÀ1,whichiscausedbytheVÀClinkagebetweenRGOandH2V3O8.Accordingtopreviousreports,suchabridgebe-tweentheactivematerialandRGOmayproduceasynergisticeffectthatimprovesthelithium-storagebehavior.[27]Further-more,thescatteringbackgroundoftheH2V3O8/RGOcompositeisverystrong,andtheRamanpeaksaremuchweake