半导体湿法清洗工艺详细介绍.pptx

半导体湿法清洗工艺详细介绍.pptx

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WETProcessIntroduction,WETinOurLife,HaierXQG55-QH1298,2,LGWD-A12185D,SIEMENSSilverWD7125,3,Outline,OverallWETProcessIntroductionFrequently-usedChemistriesandRatiosApplicationsandKnow-howsHardwareProfilesofWETToolsLessonsLearntWETRecipeNameRuleWETProcess/EQGroups,4,1.OverallWETProcessIntroduction,Frequently-usedChemistriesandRatiosApplicationsandKnow-howsHardwareProfilesofWETToolsLessonOsuLetalirnnetWETRecipeNameRuleWETProcess/EQGroups,5,通过各种化1学.药O剂v（er主al要lW是能ET与P硅r或oc硅e制ss程In相t关ro的d化uc合ti物o反n应的,PurposeofWetCleaningProcess,Throughaseriesofprocessestomakethewafersfreefromparticles,organiccontaminations,metalcontamination,surfacemicroroughnessandnativeoxideusingsomekindsofchemicalsincludingDIW.,液体化学试剂）之间的组合使用，达到清除可能产生不良影响或,多余化合物或洁净晶圆表面的工艺过程。

（同时强调：

大部分都是有毒或者刺激性化学品）。

1.Overa,llWETProcessIntroduction,MajorProcess（inAlphabeticOrder）,6,1.OverallWETProcessIntroduction,Clean,Etch,Toremove:

（PostEtch/CMP,Pre-Litho/Film）,SurfaceParticlesResidualsOrganicParticlesMetallicIonsSurfaceConditioningPhotoResist（DSP,ST250）,Challenges,Functions,Category,Particleremained/re-depositedResidualremainedMetalContaminated,Tostrip/etch:

Oxide（BSG,HDP,BPSG）NitridePolysiliconBaresiliconCoSix,TiN,WSixBacksideetchPhotoResist（SPM,ACT,DUO）Filmover-etchedFilmunder-etched（Residue）Waferde-structured,7,WET,WETLayersin65nmProcessFlow65nmprocessflow:

Toremove:

SurfaceParticlesResidualsOrganicParticlesMetallicIonsSurfaceConditioningPhotoResist,Tostrip/etch:

OxideNitride,8,ParticleRemoval,ParticleSource:

Material:

Chemicalliquor,H2O,N2GasIncomingwafer:

PreprocesscontaminationDirtychemicalandparts.MechanismofParticleAdsorption:

9,ParticleRemoval,10,ParticleRemoval,SC1MostparticlesandsurfacesarenegativelychargedinalkalinesolutionsatPHvaluesgreaterthan10IndiluteSC1solution,mostsurfacesandparticleshaveanegativezetapotentialOnceparticlesaredislodgedfromthesurface,negativezetapotentialcreateselectrostaticrepulsionandpreventsre-depositionofparticles,11,WETEtching,Disadvantage:

各向同性，undercut严重，不适合刻蚀精细图形,DryEtch（Plasmaetch）,WETEtch（Plasmaetch）,12,WETEtching,Excellence:

高选择比，没有plasmadamage,更低的成本,Si,SIN,SIN,Oxide,Si,Oxide,H3PO4+H2O,SIN:

Oxide选择比1000:

1,Si,Oxide,SACOxideRemoveDualGateEtchSPACER-ETSAB-ET,SIN-RM,Si,HF,13,14,Outline,OverallWETProcessIntroductionFrequently-usedChemistriesandRatiosApplicationsandKnow-howsHardwareProfilesofWETToolsLessonsLearntWETRecipeNameRuleWETProcess/EQGroups,2.Frequently-usedChemistriesandRatios,15,16,Outline,OverallWETProcessIntroductionFrequently-usedChemistriesandRatiosApplicationsandKnow-howsHardwareProfilesofWETToolsLessonsLearntWETRecipeNameRuleWETProcess/EQGroups,3.1SC1Cleaning（1/4）,Chemistry:

Temp:

29%NH4OH:

30%H2O2:

H2O=1:

2:

5035/50/65,Functions:

Particleandlightpolymerremoval,Mechanism:

NH4OHetchesoxide;H2O2reformsoxide.AlkalinePHvaluecreatesanegativechargeonbothwafersurfaceandtheimpurityparticle.OxidationandElectricalRepulsion,a）Oxidationmechanism,17,b）Electricalrepulsionmechanism,Oxidation,Dissolution,Surfaceetching,Electricalrepulsion,3.1SC1Cleaning（2/4）,Thehighertemperature,thehigherParticleRemovalEfficiency（PRE）;butthehigheroxideandpolyetchrate.Normallyuse35SC1forclean.,18,3.1SC1Cleaning（3/4）,MegasonicanditsMechanismAcousticstreamingDraggingforcesandrollingmomentsatSubstrate/Liquidinterfacetohelpparticleremoval.AcousticcavitationandbubbleimplosionHighenergyshockwavesdislodgingtheparticle.,

（1）,19,

（2）,

（1）,

（2）,3.1SC1Cleaning（4/4）,CharacteristicsofMegasonic:

Thehigherpower,thehigherParticleRemovalEfficiency（PRE）;butthehigherpotentialofdamageaswell.Thehigherfrequency,thesmallerbubblesize;sothatthehigherPRE.ThereisanoptimumconcentrationofdissolvedgaswhichcouldgetthebestPRE.Ifchemicalconcentration/temperatureistoohigh,thenthereisahighriskofpittingonSi.Forthehighviscositychemicals（SPM）,theMegasoniccouldbeonlyappliedinDIWbath.Materialswhichhavehighsurfaceenergyandhighmechanicalhardness-thosemostresistanttodamage-aregoodcandidatesforultrasoniccleaning.,20,21,3.2SC2Cleaning,Chemistry:

Temp:

Functions:

Mechanism:

36%HCL:

30%H2O2:

H2O=1:

1:

5025IonicandMetallicContaminationRemovalSC2providesalowpHenvironment.Alkalineions（Na,K,Limetals）,hydroxideofAl,Mg,Fe,Zn（insolubleinNH4OHSC1）,andresidualtracemetal（Au/CunotcompletelydesorbedbySC1）willbedissolvedinSC2.2Na+2HCL=2NaCl+H2NoheatinginSC2,ambienttemperature（2325）.NoMegasonicinSC2.,Notes:

22,3.3HF,Chemistry:

Temp:

Functions:

Mechanism:

49%HF:

H2O=1:

0,1:

100,1:

200,1:

50060/25Waferrecycle,Oxideremoval,Slightpolymerremoval,SiO2+2HF2-+2H3O+,SiF4+4H2O（inHFsolution）,SiF4+2HFH2SiF6,SiFNHFNHSiFinBOEsolution1）AfterHF,theSiwaferhasH2SiF6.ThatmeansthesurfaceisnegativelychargedbySi