碳化硅电力电子器件研发进展与存在问题Word格式文档下载.docx

碳化硅电力电子器件研发进展与存在问题Word格式文档下载.docx

《碳化硅电力电子器件研发进展与存在问题Word格式文档下载.docx》由会员分享，可在线阅读，更多相关《碳化硅电力电子器件研发进展与存在问题Word格式文档下载.docx（5页珍藏版）》请在冰豆网上搜索。

碳化硅电力电子器件研发进展与存在问题@#@碳化硅电力电子器件研发进展与存在问题@#@ProgressandproblemsinresearchanddevelopmentofSiCPowerElectronicDevices@#@Author:

@#@ChenZhiming@#@Keywords:

@#@siliconcarbide,powerelectronics,devices@#@1Introduction@#@Withthehelpoftherapiddevelopmentofmicroelectronicstechnology,powerelectronicsdevicesbasedonsiliconbecauseofthehighpowerfieldeffecttransistor（powerMOS）andinsulatedgatebipolartransistor（IGBT）comprehensiveapplicationofnewpowerelectronicdevicesandmature.Atpresent,theperfectperformanceofthesedeviceshasswitchwiththestructuraldesignandmanufacturingprocessandclosetothetheoreticallimitbythematerialpropertiesdetermined,relyonsilicondevicescontinuetoimproveandenhancethepowerelectronicdeviceandsystemperformancepotentialisverylimited.So,relyonnewmaterialstomeethigherrequirementsontheperformanceofthedeviceofanewgenerationofpowerelectronicdevicesandsystems,asearlyasattheturnofthecenturybeforetheformationofaconsensusinthepowerelectronicsresearchandtechnology,researchanddevelopmentofsiliconcarbidepowerelectronicdevicesalongwiththeformationofhotspots.@#@Asakindofwidebandgapsemiconductormaterial,siliconcarbidenotonlyhighbreakdownfieldstrengthandgoodthermalstability,butalsohassaturatedelectrondriftvelocityandhighthermalconductivity,highfrequencyandhighpowerdevicescanbeusedtomanufactureavarietyofhightemperature,appliedtosilicondevicesarenotsuitableforoccasions,ortoproducesilicondevicesingeneralapplicationstogeneratetheeffect.Theoperatingtemperatureofthedevicecanbeimprovedbyusingwidebandgapmaterials.Theforbiddenbandwidthsof6H-,SiCand4H-SiCareashighas3eVand3.25eV,respectively,andthecorrespondingintrinsictemperaturecanbeashighas800degreesC.Thatis,thenarrowestbandgap3C-SiC,anditsbandgapisabout2.3eV.Asaresult,thehighestoperatingtemperatureofsiliconcarbidedevicesmayexceed600C.Powerswitchdevicesreversevoltagestressanddriftregion（unipolardevice）orbase（thelengthofbipolardevices）andresistivity,resistivityandconductionlengthandunipolarpowerswitchdevicesanddirectlydependsonthespecificresistanceofthedriftregion,andsoitsmanufacturingmaterialbreakdownelectricfieldintensityisinverselyproportionaltothecubic[[i]].Highvoltagepowerswitchesarefabricatedusingmaterialswithhighbreakdownelectricfield.Theresistivityisnottoohigh,andthedriftregionorbaseregionofthedeviceisnottoolong.Inthisway,notonlywillthestatespecificresistancebegreatlyreduced,butalsotheworkingfrequencywillbegreatlyimproved.Thebreakdownfieldstrengthofsiliconcarbidesiliconis8times,2timesthesaturatedelectrondriftvelocityissilicon,moreconducivetoimprovingtheworkingfrequencyofthedevice,whichisnotonlytheSiCunipolarpowerswitchonstateislowerthantheresistance,theworkingfrequencygenerallyhavemorethan10timeshigherthansilicondevices.Thehighthermalconductivitymakesthesiliconcarbidedeviceworkstablyforalongtimeathightemperature.Inaddition,siliconcarbideistheonlycompoundthatcanbeusedtoproducehighqualitybulkoxidesbythermaloxidation.ThismakesitpossibletobuilddevicessuchasMOSFETandIGBT,likesilicon,thatcontainMOSstructures.Inadditiontopowerelectronics,themajorapplicationsofsiliconcarbideincludehighfrequencyelectronics,hightemperatureelectronics,andsensortechnologysuchas[[ii]],[[iii]].Asaresult,powerelectronics,includingmicrowavepower,islikelytobenefitfromthepracticaluseofsiliconcarbidematerials,notjusttheuseofsiliconcarbidepowerswitchestoimproveoverallmachineperformance,@#@Italsoincludesthehightemperatureresistanceandchemicalstabilityofthematerial,throughtheintegrationofsignalacquisitionandprocessingsystemandintelligentcontrolsystemtoimprovetheperformanceofthewholemachine,sothatitcanmaintaingoodworkingconditionsintheharshenvironment.],[].Therefore,thepowerelectronictechnologyincludingmicrowavepower,maybeobtainedfromSiCpracticalbenefits,itisnotonlytoimprovetheuseofSiCpowerswitchonthemachineperformance,includingmaterialresistanceandchemicalstabilitybasedontheperformanceimprovementofintegratedsignalacquisitionandprocessingsystemandintelligentcontrolsystem,whichyoucanmaintainagoodworkingconditionintheharshenvironment.].Highvoltagepowerswitchesarefabricatedusingmaterialswithhighbreakdownelectricfield.Theresistivityisnottoohigh,andthedriftregionorbaseregionofthedeviceisnottoolong.Inthisway,notonlywillthestatespecificresistancebegreatlyreduced,butalsotheworkingfrequencywi