JP016717A翻译.docx
《JP016717A翻译.docx》由会员分享,可在线阅读,更多相关《JP016717A翻译.docx(31页珍藏版)》请在冰豆网上搜索。
JP016717A翻译
PATENTABSTRACTSOFJAPAN
(11)Publicationnumber:
2008-016717
(43)Dateofpublicationofapplication:
24.01.2008
(51)Int.CI.8
H01L21/202
H01L21/2682
H01L21/3362
H01L29/7862
(21)Applicationnumber:
2006-187963
(71)Applicant:
MITSUBISHIELECTRICCORP
(22)Dateoffiling:
07.07.2006
(72)Inventor:
YURASHINSUKE
SONOATSUHIRO
OKAMOTOTATSUKI
SUGAHARAKAZUYUKI
YAMAYOSHIICHIJI
(54)MANUFACTURINGMETHODOFPOLYCRYSTALLINESILICONFILM
(57)Abstract:
PROBLEMTOBESOLVED:
Toprovideamethodformanufacturingapolycrystallinesiliconfilmbywhichuniformitycanbeimprovedincrystalgrainsizeofthepolycrystallinesiliconfilmformedbylaserannealing.
SOLUTION:
Thepolycrystallinesiliconfilmisformedbycrystallizinganamorphoussiliconfilmof60nmormoreinthicknesswhichisformedonasubstratebylaserannealing,wherebylaserwithwavelengthsof390nmto640nm(YAG2ωlaser,forexample)isappliedinanatmosphereunderanoxygenpartialpressureof2Paorless.Inthiscase,anirradiationenergydensity(forexample,withinarangeRgof0.366to0.378J/cm2)oflaserisselectedsothattheaveragecrystalgrainsizeofthepolycrystallinesiliconfilmformedbylaserannealingmaybewithinarangeof0.28μm±0.03μm.Thepolycrystallinesiliconfilmismanufacturedfromtheamorphoussiliconfilmbyperforminglaserannealingattheselectedirradiationenergydensity.Inthisway,thepolycrystallinesiliconfilmwhichexhibitsasmallstandarddeviationrelativevalueofcrystalgrainsizecanbeformedandtheuniformityofitscrystalgrainsizecanbeimproved.
CLAIM+DETAILEDDESCRIPTION
[Claim(s)]
[Claim1]
Itishowtomanufactureapolycrystallinesiliconfilm,
Aprocessofforminganamorphoussiliconfilmofnotlessthan60nmofthicknessonasubstrate,
Acrystallizationstagewhichcrystallizessaidamorphoussiliconfilmandformsapolycrystallinesiliconfilmbylaserannealingwhichoxygentensionirradiateswithlaserwithawavelengthof390nm-640nminatmosphereof2Paorless,
Apreparation,
Saidcrystallizationstage,
Aselectionprocessofselectingirradiationenergydensityoflaserwhichbecomeswithinthelimitswhosemeanparticlediameterofacrystalofapolycrystallinesiliconfilmformedofsaidlaserannealingis0.28micrometer**0.03micrometer,
Amanufacturingprocesswhichperformssaidlaserannealingwithirradiationenergydensityoflaserselectedatsaidselectionprocess,andmanufacturessaidpolycrystallinesiliconfilm,
Amanufacturingmethodofa****(ing)polycrystallinesiliconfilm.
[Claim2]
Inamanufacturingmethodofthepolycrystallinesiliconfilmaccordingtoclaim1,
Aspecificprocessofspecifyingalowerlimitofirradiationenergydensityoflaserwhichunevennessoftheshapeofamusclewhichmetinthedirectionverticaltoascanningdirectionoflaseronthesurfaceofapolycrystallinesiliconfilmformedofsaidlaserannealingproduces,
Itpreparesforapan,
Amanufacturingmethodofapolycrystallinesiliconfilmselectingsaidirradiationenergydensityinsaidselectionprocessinarangetoalowerlimitto95%ofthelowerlimitsconcernedofirradiationenergydensityoflaserspecifiedatsaidspecificprocess.
[Claim3]
Inamanufacturingmethodofthepolycrystallinesiliconfilmaccordingtoclaim1,
Ameasuringprocesswhichmeasuresintensityofthescatteredlightwhichirradiateswithapredeterminedlightwhichcontainedvisiblelighttoeachsurfaceofapolycrystallinesiliconfilmformedbyperformingsaidlaserannealing,changingsaidirradiationenergydensity,andarescatteredaboutoneachsurfaceconcerned,
Itpreparesforapan,
Whilespecifyinganextremumof4whichgraph-izesintensityofsaidscatteredlighttosaidirradiationenergydensitybasedonameasurementresultobtainedbysaidmeasuringprocess,andbecomesorderwithsaidlowirradiationenergydensityfromthe1stmaximalvalue,1stminimalvalue,2ndmaximalvalue,and2ndminimalvalue,
Amanufacturingmethodofapolycrystallinesiliconfilmcharacterizedbyselectingsaidirradiationenergydensityfromtherangeof**10mJ/cm2centeringonirradiationenergydensitycorrespondingtosaid1stminimalvalueinsaidselectionprocess.
[Claim4]
Inamanufacturingmethodofthepolycrystallinesiliconfilmaccordingtoclaim3,
Amanufacturingmethodofapolycrystallinesiliconfilm,whereinsaidpredeterminedlightiswhitelight.
[Claim5]
Itishowtomanufactureapolycrystallinesiliconfilm,
Aprocessofforminganamorphoussiliconfilmofnotlessthan60nmofthicknessonasubstrate,
Acrystallizationstagewhichcrystallizessaidamorphoussiliconfilmandformsapolycrystallinesiliconfilmbylaserannealingwhichoxygentensionirradiateswithlaserwithawavelengthof390nm-640nminatmosphereof2Paorless,
Ameasuringprocesswhichmeasuresintensityofthescatteredlightwhichirradiateswithapredeterminedlightwhichcontainedvisiblelighttoeachsurfaceofapolycrystallinesiliconfilmformedbyperformingsaidlaserannealing,changingirradiationenergydensityofsaidlaser,andarescatteredaboutoneachsurfaceconcerned,
Apreparation,
Whilespecifyinganextremumof4whichgraph-izesintensityofsaidscatteredlighttosaidirradiationenergydensitybasedonameasurementresultobtainedbysaidmeasuringprocess,andbecomesorderwithsaidlowirradiationenergydensityfromthe1stmaximalvalue,1stminimalvalue,2ndmaximalvalue,and2ndminimalvalue,
Saidcrystallizationstage,
Amanufacturingprocesswhichperformssaidlaserannealingwithirradiationenergydensityselectedfromtherangeof**10mJ/cm2centeringonirradiationenergydensitycorrespondingtosaid2ndminimalvalue,andmanufacturessaidpolycrystallinesiliconfilm,
Amanufacturingmethodofa****(ing)polycrystallinesiliconfilm.
[DetailedDescriptionoftheInvention]
[FieldoftheInvention]
[0001]
Thisinventionrelatestothemethodofirradiatinganamorphoussiliconfilmwithlaserandobtainingapolycrystallinesiliconfilm.
[BackgroundoftheInvention]
[0002]
Now,[thepictureelementpartofaliquidcrystalpaneloranorganicelectroluminescence(electroluminescence)panel]Switchingbythethinfilmtransistor(TFT:
ThinFilmTransistor)onglassorthesubstratemadefromsyntheticquartzwhichwasamorphousorwasformedinthesiliconefilmofpolycrystalconstitutesthepicture.Althoughmainlyinstalledoutsideindependentlynow,ifthedrivercircuitwhichdrivesapictureelementtransistortothisliquidcrystalpanelcanbeconstitutedsimultaneously,afastmeritcanbeobtainedinrespectofthemanufacturingcostofaliquidcrystalpaneloranorganicELpanel,reliability,etc.Now,sincethecrystallinityofthesiliconefilmwhichconstitutestheactivelayerofTFTisbad,theperformanceofTFTrepresentedbythemobilityofacarrierislow,andproductionoftheintegratedcircuitinwhichrapidityandhighlyefficientnaturearedemandedisdifficult.InordertoimprovethecrystallinityofasiliconefilmforthepurposeofrealizingTFTwhichhasacarrierofhighmobility,generallyheattreatment(laserannealing)bylaserradiationisperformed.
[0003]
TherelationbetweenthecrystallinityofasiliconefilmandthecarriermobilityinTFTisexplainedasfollows.Generallythesiliconefilmobtainedbycarryingoutlaserannealingoftheamorphoussiliconfilmisapolycrystal.Thecrystaldefectiscarryingoutlocalizationtothegrainboundaryofthepolycrystal,andthischeckscarriermovementoftheactivelayerofTFT.Therefore,whatisnecessaryistolessenthenumberoftimesofcrossingthegrainboundary,whileacarriermovesanactivelayer,andjusttomakecrystaldefectdensitysmall,inordertomakecarriermobilityinTFThigh.Acrystalgraindiameterislargeandthepurposeoflaserannealinghasacrystaldefectinthegrainboundaryinformingfewpolycrystallinesiliconfilms.
[0004]
Next,themanufacturingmethodoftheconventionalTFTisexplained.First,forexample,siliconoxideisformedonaglasssubstratebyplasmaCVD(ChemicalVaporDeposition:
chemicalsgaseousphasevacuumdeposition).AnamorphoussiliconfilmisdepositedbyplasmaCVDonthissiliconoxide.Subsequently,theexcimerlaser(XeCl(wavelength:
308nm))orNd:
The2ndharmonicsofanYAGlaser(wavelength:
532nm.)Thefollowing"YAG2omegalaser"iscalled.Itglaresonanamorphoussiliconfilm.Thesiliconwhichcarriedoutmeltingcrystallizesandapolycrystallinesiliconfilmisformedastheportionwithwhichthislaserwasirradiatedcarriesoutmeltingoftheamorphoussiliconfilmandtemperaturefallsafterthat.
[0005]
Then,apolycrystallinesiliconfilmispatterned,siliconoxideisformedonthepolycrystallinesiliconfilmafterpatterning,andthemetalmembraneoflowelectricresistance,suchasTa,Cr,andMo,isfurtherformedonit.Andagateelectrodeisformedbypatterningthemetalmembraneconcerned.
[0006]
Subsequently,byperformingiondopingwhichusesasamasktheresistusedforpatterningofagateelectrodeorthegateelectrodeconcerned,theimpurityofNtypeorPtypeisintroducedintoapolycrystallinesiliconfilm,andasource/drainareaisformedinselfalign.Thatis,TFTofannchanneltypeMOS(NMOS)transistorisformedintheportionwhichintroducedtheimpurityofNtype,andTFTofapchanneltypeMOS(PMOS)transistorisformedintheportionintowhichthePtypeimpuritywasintroduced.
[0007]
Then,siliconoxideisdepositedandacontactholeisformedonthesource/drainareaofTFT,and